JP5309672B2 - 薄膜素子およびその製造方法 - Google Patents
薄膜素子およびその製造方法 Download PDFInfo
- Publication number
- JP5309672B2 JP5309672B2 JP2008109998A JP2008109998A JP5309672B2 JP 5309672 B2 JP5309672 B2 JP 5309672B2 JP 2008109998 A JP2008109998 A JP 2008109998A JP 2008109998 A JP2008109998 A JP 2008109998A JP 5309672 B2 JP5309672 B2 JP 5309672B2
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- Prior art keywords
- insulating film
- hole
- film
- forming
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000010409 thin film Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 239
- 239000010410 layer Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000926 separation method Methods 0.000 claims abstract description 46
- 239000012790 adhesive layer Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 39
- 230000003014 reinforcing effect Effects 0.000 claims description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 229910010272 inorganic material Inorganic materials 0.000 claims description 14
- 239000011147 inorganic material Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 230000003796 beauty Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 16
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 230000002787 reinforcement Effects 0.000 abstract 3
- 230000001681 protective effect Effects 0.000 description 23
- 239000000463 material Substances 0.000 description 17
- 238000000206 photolithography Methods 0.000 description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008109998A JP5309672B2 (ja) | 2008-04-21 | 2008-04-21 | 薄膜素子およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008109998A JP5309672B2 (ja) | 2008-04-21 | 2008-04-21 | 薄膜素子およびその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009260166A JP2009260166A (ja) | 2009-11-05 |
JP2009260166A5 JP2009260166A5 (enrdf_load_stackoverflow) | 2011-01-06 |
JP5309672B2 true JP5309672B2 (ja) | 2013-10-09 |
Family
ID=41387194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008109998A Expired - Fee Related JP5309672B2 (ja) | 2008-04-21 | 2008-04-21 | 薄膜素子およびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5309672B2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109564741A (zh) * | 2016-08-09 | 2019-04-02 | 株式会社半导体能源研究所 | 显示装置的制造方法、显示装置、显示模块及电子设备 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5483151B2 (ja) * | 2009-03-05 | 2014-05-07 | カシオ計算機株式会社 | 薄膜素子およびその製造方法 |
KR101695296B1 (ko) * | 2012-12-27 | 2017-01-13 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 및 그의 제조방법 |
KR102340066B1 (ko) | 2016-04-07 | 2021-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법 및 플렉시블 디바이스의 제작 방법 |
KR102318625B1 (ko) * | 2016-04-12 | 2021-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법 및 플렉시블 디바이스의 제작 방법 |
KR102378976B1 (ko) * | 2016-05-18 | 2022-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법, 표시 장치, 모듈, 및 전자 기기 |
KR102554691B1 (ko) | 2016-10-07 | 2023-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판 |
CN111129036B (zh) * | 2019-12-25 | 2022-07-26 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法、显示面板 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3738799B2 (ja) * | 1996-11-22 | 2006-01-25 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法,アクティブマトリクス基板および液晶表示装置 |
JP2004349513A (ja) * | 2003-05-22 | 2004-12-09 | Seiko Epson Corp | 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器 |
-
2008
- 2008-04-21 JP JP2008109998A patent/JP5309672B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109564741A (zh) * | 2016-08-09 | 2019-04-02 | 株式会社半导体能源研究所 | 显示装置的制造方法、显示装置、显示模块及电子设备 |
US11054687B2 (en) | 2016-08-09 | 2021-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device, display device, display module, and electronic device |
Also Published As
Publication number | Publication date |
---|---|
JP2009260166A (ja) | 2009-11-05 |
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