JP5309230B2 - 挿入キャリアおよび半導体ウェハの同時両面材料除去処理方法 - Google Patents

挿入キャリアおよび半導体ウェハの同時両面材料除去処理方法 Download PDF

Info

Publication number
JP5309230B2
JP5309230B2 JP2012006033A JP2012006033A JP5309230B2 JP 5309230 B2 JP5309230 B2 JP 5309230B2 JP 2012006033 A JP2012006033 A JP 2012006033A JP 2012006033 A JP2012006033 A JP 2012006033A JP 5309230 B2 JP5309230 B2 JP 5309230B2
Authority
JP
Japan
Prior art keywords
coating
processing
semiconductor wafer
core
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012006033A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012152891A (ja
Inventor
ゲオルグ・ピーチュ
ミヒャエル・ケルスタン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG filed Critical Siltronic AG
Publication of JP2012152891A publication Critical patent/JP2012152891A/ja
Application granted granted Critical
Publication of JP5309230B2 publication Critical patent/JP5309230B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2012006033A 2011-01-21 2012-01-16 挿入キャリアおよび半導体ウェハの同時両面材料除去処理方法 Expired - Fee Related JP5309230B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011003008.5 2011-01-21
DE102011003008.5A DE102011003008B4 (de) 2011-01-21 2011-01-21 Führungskäfig und Verfahren zur gleichzeitig beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben

Publications (2)

Publication Number Publication Date
JP2012152891A JP2012152891A (ja) 2012-08-16
JP5309230B2 true JP5309230B2 (ja) 2013-10-09

Family

ID=46510671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012006033A Expired - Fee Related JP5309230B2 (ja) 2011-01-21 2012-01-16 挿入キャリアおよび半導体ウェハの同時両面材料除去処理方法

Country Status (8)

Country Link
US (1) US8974267B2 (ko)
JP (1) JP5309230B2 (ko)
KR (1) KR101375050B1 (ko)
CN (1) CN102610510B (ko)
DE (1) DE102011003008B4 (ko)
MY (1) MY156911A (ko)
SG (1) SG182913A1 (ko)
TW (1) TWI490934B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3356652A4 (en) * 2015-09-28 2019-06-19 Saint-Gobain Abrasives, Inc. METHOD AND SYSTEM FOR REMOVING MATERIAL FROM A WORKPIECE
CN106363529A (zh) * 2016-11-14 2017-02-01 宜兴市晶科光学仪器有限公司 一种用于双面研磨抛光机的工装夹具
CN107243821A (zh) * 2017-08-02 2017-10-13 上海超硅半导体有限公司 一种蓝宝石衬底片的单面抛光方法
CN108500778A (zh) * 2018-05-30 2018-09-07 浙江美迪凯现代光电有限公司 一种用于光学镜片厚度研抛的游星轮
KR102131443B1 (ko) * 2018-10-04 2020-07-08 주식회사 이포스 연마장치용 캐리어
CN110000692B (zh) * 2019-04-29 2024-01-09 青岛高测科技股份有限公司 一种用于半导体晶棒磨削工序的上下料装置及使用方法
DE102020101313B3 (de) * 2020-01-21 2021-07-01 Lapmaster Wolters Gmbh Läuferscheibe, Doppelseitenbearbeitungsmaschine und Verfahren zum Bearbeiten mindestens eines Werkstücks in einer Doppelseitenbearbeitungsmaschine
JP7004026B2 (ja) * 2020-06-12 2022-01-21 株式会社Sumco ワークの両面研磨方法、ワークの製造方法、及びワークの両面研磨装置
KR102570044B1 (ko) * 2021-02-05 2023-08-23 에스케이실트론 주식회사 양면 연마 장치용 캐리어
CN117463548B (zh) * 2023-12-26 2024-03-08 裕乾包装科技(江苏)有限公司 一种基于塑料制品加工的喷涂装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW227540B (ko) * 1992-06-15 1994-08-01 Philips Electronics Nv
JPH1110530A (ja) * 1997-06-25 1999-01-19 Shin Etsu Handotai Co Ltd 両面研磨用キャリア
US5997390A (en) * 1998-02-02 1999-12-07 Speedfam Corporation Polishing apparatus with improved alignment of polishing plates
DE19937784B4 (de) 1999-08-10 2006-02-16 Peter Wolters Werkzeugmaschinen Gmbh Zweischeiben-Feinschleifmaschine
JP2001179615A (ja) * 1999-12-27 2001-07-03 Seiko Epson Corp 研磨用キャリア、表面研磨装置及び表面研磨方法
WO2001082354A1 (fr) * 2000-04-24 2001-11-01 Sumitomo Mitsubishi Silicon Corporation Procédé de fabrication d'une plaquette de semi-conducteur
DE10023002B4 (de) 2000-05-11 2006-10-26 Siltronic Ag Satz von Läuferscheiben sowie dessen Verwendung
DE10162597C1 (de) * 2001-12-19 2003-03-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung beidseitig polierter Halbleiterscheiben
US6582279B1 (en) * 2002-03-07 2003-06-24 Hitachi Global Storage Technologies Netherlands B.V. Apparatus and method for reclaiming a disk substrate for use in a data storage device
DE10250823B4 (de) 2002-10-31 2005-02-03 Siltronic Ag Läuferscheibe und Verfahren zur gleichzeitig beidseitigen Bearbeitung von Werkstücken
DE102006032455A1 (de) 2006-07-13 2008-04-10 Siltronic Ag Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben sowie Halbleierscheibe mit hervorragender Ebenheit
JP2010510083A (ja) * 2006-11-21 2010-04-02 スリーエム イノベイティブ プロパティズ カンパニー ラッピングキャリア及びラッピング方法
DE102007056627B4 (de) 2007-03-19 2023-12-21 Lapmaster Wolters Gmbh Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
DE102007013058B4 (de) 2007-03-19 2024-01-11 Lapmaster Wolters Gmbh Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
DE102007049811B4 (de) * 2007-10-17 2016-07-28 Peter Wolters Gmbh Läuferscheibe, Verfahren zur Beschichtung einer Läuferscheibe sowie Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben
KR100898821B1 (ko) * 2007-11-29 2009-05-22 주식회사 실트론 웨이퍼 캐리어의 제조방법
JP2009302410A (ja) 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
CN101621714B (zh) 2008-06-30 2013-06-12 华为技术有限公司 节点、数据处理系统和数据处理方法
KR20110111438A (ko) * 2008-12-31 2011-10-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 래핑을 위한 코팅된 캐리어와 제조 및 사용 방법
DE102009030292B4 (de) 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe

Also Published As

Publication number Publication date
CN102610510A (zh) 2012-07-25
US8974267B2 (en) 2015-03-10
MY156911A (en) 2016-04-15
US20120190277A1 (en) 2012-07-26
KR20120099340A (ko) 2012-09-10
KR101375050B1 (ko) 2014-03-27
TWI490934B (zh) 2015-07-01
DE102011003008B4 (de) 2018-07-12
JP2012152891A (ja) 2012-08-16
DE102011003008A1 (de) 2012-07-26
CN102610510B (zh) 2015-06-03
SG182913A1 (en) 2012-08-30
TW201232646A (en) 2012-08-01

Similar Documents

Publication Publication Date Title
JP5309230B2 (ja) 挿入キャリアおよび半導体ウェハの同時両面材料除去処理方法
TWI411494B (zh) 載具、載具之塗覆方法、及對半導體晶圓進行同時雙面材料移除之加工方法
KR101019447B1 (ko) 복수 개의 반도체 웨이퍼의 양면 동시 연마 방법
JP6656162B2 (ja) 研磨パッド及びシステム、並びにその作製方法及び使用方法
TWI398320B (zh) 用於扁平工件之雙面加工之裝置及用於多個半導體晶圓之同時雙面材料移除加工之方法
KR101494912B1 (ko) 래핑 캐리어 및 방법
DE102007013058A1 (de) Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
TW201206632A (en) Ethod and apparatus for trimming the working layers of a double-side grinding apparatus
TW201231218A (en) Method for providing a respective flat working layer on each of the two working disks of a double-side processing apparatus
EP2145731A1 (en) A chemical mechanical polishing pad manufacturing assembly
DE102011089570A1 (de) Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130604

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130701

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5309230

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees