JP5296963B2 - 多層配線半導体集積回路、半導体装置 - Google Patents
多層配線半導体集積回路、半導体装置 Download PDFInfo
- Publication number
- JP5296963B2 JP5296963B2 JP2005368635A JP2005368635A JP5296963B2 JP 5296963 B2 JP5296963 B2 JP 5296963B2 JP 2005368635 A JP2005368635 A JP 2005368635A JP 2005368635 A JP2005368635 A JP 2005368635A JP 5296963 B2 JP5296963 B2 JP 5296963B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- wiring layer
- integrated circuit
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/601—Capacitive arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/43—Layouts of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/495—Capacitive arrangements or effects of, or between wiring layers
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005368635A JP5296963B2 (ja) | 2005-12-21 | 2005-12-21 | 多層配線半導体集積回路、半導体装置 |
| US11/612,840 US7683490B2 (en) | 2005-12-21 | 2006-12-19 | Semiconductor integrated circuit and semiconductor device having multilayer interconnection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005368635A JP5296963B2 (ja) | 2005-12-21 | 2005-12-21 | 多層配線半導体集積回路、半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007173484A JP2007173484A (ja) | 2007-07-05 |
| JP2007173484A5 JP2007173484A5 (enExample) | 2009-11-19 |
| JP5296963B2 true JP5296963B2 (ja) | 2013-09-25 |
Family
ID=38172515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005368635A Expired - Fee Related JP5296963B2 (ja) | 2005-12-21 | 2005-12-21 | 多層配線半導体集積回路、半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7683490B2 (enExample) |
| JP (1) | JP5296963B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116997179B (zh) * | 2022-04-24 | 2025-05-02 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5014110A (en) * | 1988-06-03 | 1991-05-07 | Mitsubishi Denki Kabushiki Kaisha | Wiring structures for semiconductor memory device |
| JPH0319257A (ja) | 1989-06-15 | 1991-01-28 | Hitachi Ltd | 半導体集積回路装置 |
| US5864181A (en) * | 1993-09-15 | 1999-01-26 | Micron Technology, Inc. | Bi-level digit line architecture for high density DRAMs |
| US5670815A (en) * | 1994-07-05 | 1997-09-23 | Motorola, Inc. | Layout for noise reduction on a reference voltage |
| EP0697735B1 (en) * | 1994-08-15 | 2002-03-27 | International Business Machines Corporation | Single twist layout and method for paired line conductors of integrated circuits |
| US5894142A (en) * | 1996-12-11 | 1999-04-13 | Hewlett-Packard Company | Routing for integrated circuits |
| JPH11214519A (ja) * | 1998-01-20 | 1999-08-06 | Matsushita Electric Ind Co Ltd | 集積回路素子および集積回路素子における配線方法 |
| JP4501164B2 (ja) * | 1998-05-01 | 2010-07-14 | ソニー株式会社 | 半導体記憶装置 |
| JP2001168195A (ja) | 1999-12-06 | 2001-06-22 | Matsushita Electric Ind Co Ltd | 多層配線半導体集積回路 |
| US6858928B1 (en) * | 2000-12-07 | 2005-02-22 | Cadence Design Systems, Inc. | Multi-directional wiring on a single metal layer |
| JP2003152014A (ja) * | 2001-11-09 | 2003-05-23 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
| JP2004178704A (ja) * | 2002-11-27 | 2004-06-24 | Renesas Technology Corp | 半導体回路装置 |
| US7505321B2 (en) * | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
| JP4405865B2 (ja) * | 2004-06-24 | 2010-01-27 | 富士通マイクロエレクトロニクス株式会社 | 多層配線構造の製造方法及びfib装置 |
-
2005
- 2005-12-21 JP JP2005368635A patent/JP5296963B2/ja not_active Expired - Fee Related
-
2006
- 2006-12-19 US US11/612,840 patent/US7683490B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20070138645A1 (en) | 2007-06-21 |
| JP2007173484A (ja) | 2007-07-05 |
| US7683490B2 (en) | 2010-03-23 |
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| R150 | Certificate of patent or registration of utility model |
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| LAPS | Cancellation because of no payment of annual fees |