JP5292032B2 - 重合膜の成膜方法および成膜装置 - Google Patents
重合膜の成膜方法および成膜装置 Download PDFInfo
- Publication number
- JP5292032B2 JP5292032B2 JP2008236819A JP2008236819A JP5292032B2 JP 5292032 B2 JP5292032 B2 JP 5292032B2 JP 2008236819 A JP2008236819 A JP 2008236819A JP 2008236819 A JP2008236819 A JP 2008236819A JP 5292032 B2 JP5292032 B2 JP 5292032B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- forming
- raw material
- polymer film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
- C08G73/105—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008236819A JP5292032B2 (ja) | 2008-09-16 | 2008-09-16 | 重合膜の成膜方法および成膜装置 |
| CN2009801363461A CN102160156B (zh) | 2008-09-16 | 2009-07-17 | 聚合膜的成膜方法和成膜装置 |
| KR1020117006035A KR101236160B1 (ko) | 2008-09-16 | 2009-07-17 | 중합막의 성막 방법 및 성막 장치 |
| US13/063,779 US8691338B2 (en) | 2008-09-16 | 2009-07-17 | Polymerized film forming method and polymerized film forming apparatus |
| PCT/JP2009/062956 WO2010032547A1 (ja) | 2008-09-16 | 2009-07-17 | 重合膜の成膜方法および成膜装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008236819A JP5292032B2 (ja) | 2008-09-16 | 2008-09-16 | 重合膜の成膜方法および成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010073743A JP2010073743A (ja) | 2010-04-02 |
| JP2010073743A5 JP2010073743A5 (https=) | 2011-09-15 |
| JP5292032B2 true JP5292032B2 (ja) | 2013-09-18 |
Family
ID=42039389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008236819A Expired - Fee Related JP5292032B2 (ja) | 2008-09-16 | 2008-09-16 | 重合膜の成膜方法および成膜装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8691338B2 (https=) |
| JP (1) | JP5292032B2 (https=) |
| KR (1) | KR101236160B1 (https=) |
| CN (1) | CN102160156B (https=) |
| WO (1) | WO2010032547A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014005478A (ja) * | 2010-10-08 | 2014-01-16 | Kaneka Corp | 蒸着装置 |
| JP2012209393A (ja) * | 2011-03-29 | 2012-10-25 | Tokyo Electron Ltd | クリーニング方法及び成膜方法 |
| CN103476962B (zh) * | 2011-03-30 | 2015-07-01 | 夏普株式会社 | 蒸镀颗粒射出装置、蒸镀颗粒射出方法和蒸镀装置 |
| JP6224479B2 (ja) * | 2014-02-18 | 2017-11-01 | 東京エレクトロン株式会社 | 重合膜の成膜方法および成膜装置 |
| CN106555159B (zh) * | 2015-09-28 | 2018-12-11 | 北京北方华创微电子装备有限公司 | 一种基片的加热设备及加热方法 |
| JP6851171B2 (ja) * | 2016-10-14 | 2021-03-31 | 株式会社アルバック | 微細機能素子及び微細機能素子の製造方法 |
| KR102120537B1 (ko) * | 2017-04-02 | 2020-06-09 | 황창훈 | 고해상도 oled 소자 제작용 면증발원 동시증발 증착공정방법 |
| CN108570645B (zh) * | 2017-11-30 | 2023-09-29 | 上海微电子装备(集团)股份有限公司 | 真空蒸镀装置及其蒸发头、真空蒸镀方法 |
| JP6799550B2 (ja) * | 2018-01-16 | 2020-12-16 | 東京エレクトロン株式会社 | プラズマ処理装置の部品をクリーニングする方法 |
| JP7236953B2 (ja) * | 2019-08-05 | 2023-03-10 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| CN120683456B (zh) * | 2025-08-25 | 2025-11-04 | 浙江晟霖益嘉科技有限公司 | 一种双晶圆处理腔及其控制方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3231373B2 (ja) | 1991-12-20 | 2001-11-19 | 松下電器産業株式会社 | 合成樹脂被膜の形成装置及び形成方法 |
| JPH09326388A (ja) * | 1996-06-05 | 1997-12-16 | Ulvac Japan Ltd | 低比誘電率高分子膜の形成方法及び層間絶縁膜の形成方法並びに低比誘電率高分子膜形成装置 |
| US5937272A (en) * | 1997-06-06 | 1999-08-10 | Eastman Kodak Company | Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate |
| JP2001011176A (ja) * | 1999-06-25 | 2001-01-16 | Matsushita Electric Works Ltd | ポリイミド皮膜の形成方法及びポリイミド皮膜 |
| JP2002285320A (ja) * | 2001-03-27 | 2002-10-03 | Fukushima Prefecture | 有機高分子薄膜の形成方法 |
| WO2004070802A1 (ja) * | 2003-02-04 | 2004-08-19 | Tokyo Electron Limited | 処理システム及び処理システムの稼働方法 |
| JP4257576B2 (ja) * | 2003-03-25 | 2009-04-22 | ローム株式会社 | 成膜装置 |
| WO2005109486A1 (en) * | 2004-05-12 | 2005-11-17 | Viatron Technologies Inc. | System for heat treatment of semiconductor device |
| JP2006351814A (ja) | 2005-06-15 | 2006-12-28 | Tokyo Electron Ltd | クリーニング方法、コンピュータプログラム及び成膜装置 |
| WO2008069259A1 (en) * | 2006-12-05 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device |
| KR20090028413A (ko) * | 2007-09-13 | 2009-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 제작방법 및 증착용 기판 |
-
2008
- 2008-09-16 JP JP2008236819A patent/JP5292032B2/ja not_active Expired - Fee Related
-
2009
- 2009-07-17 US US13/063,779 patent/US8691338B2/en not_active Expired - Fee Related
- 2009-07-17 WO PCT/JP2009/062956 patent/WO2010032547A1/ja not_active Ceased
- 2009-07-17 KR KR1020117006035A patent/KR101236160B1/ko not_active Expired - Fee Related
- 2009-07-17 CN CN2009801363461A patent/CN102160156B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010032547A1 (ja) | 2010-03-25 |
| CN102160156A (zh) | 2011-08-17 |
| KR101236160B1 (ko) | 2013-02-22 |
| KR20110051250A (ko) | 2011-05-17 |
| US8691338B2 (en) | 2014-04-08 |
| JP2010073743A (ja) | 2010-04-02 |
| CN102160156B (zh) | 2013-04-17 |
| US20110171384A1 (en) | 2011-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5292032B2 (ja) | 重合膜の成膜方法および成膜装置 | |
| KR102664066B1 (ko) | 유기막들의 기상 퇴적 | |
| US12138654B2 (en) | Vapor phase deposition of organic films | |
| KR102493002B1 (ko) | 증착 내내 웨이퍼 온도를 가변함으로써 계면 반응들 억제 | |
| JP5243519B2 (ja) | 成膜装置 | |
| JP4879509B2 (ja) | 真空成膜装置 | |
| JP5862459B2 (ja) | 成膜方法 | |
| JP5604289B2 (ja) | 成膜装置 | |
| KR20100102228A (ko) | 성막 장치 및, 성막 방법 | |
| JP2014093331A (ja) | 重合膜の成膜方法、成膜装置の環境維持方法、成膜装置、並びに電子製品の製造方法 | |
| KR101041143B1 (ko) | 기판 가공 장치 | |
| JP2015173226A (ja) | 真空成膜装置及びこの装置を用いた成膜方法 | |
| TWI751173B (zh) | 用於由微波固化調整聚合物之熱膨脹係數(cte)的方法 | |
| JPH10289902A (ja) | 成膜装置 | |
| JP3806660B2 (ja) | 減圧乾燥装置及び減圧乾燥方法 | |
| KR20130046541A (ko) | 박막 증착 장치 및 이를 이용한 박막 증착 방법 | |
| US20250391671A1 (en) | Reaction chamber with multi phase precursor delivery | |
| KR20190057468A (ko) | 서브 챔버를 구비한 iCVD 시스템 및 방법 | |
| JP2011009380A (ja) | 成膜装置 | |
| JP2011021264A (ja) | 成膜装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110802 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110802 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130604 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130610 |
|
| LAPS | Cancellation because of no payment of annual fees |