JP5292032B2 - 重合膜の成膜方法および成膜装置 - Google Patents

重合膜の成膜方法および成膜装置 Download PDF

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Publication number
JP5292032B2
JP5292032B2 JP2008236819A JP2008236819A JP5292032B2 JP 5292032 B2 JP5292032 B2 JP 5292032B2 JP 2008236819 A JP2008236819 A JP 2008236819A JP 2008236819 A JP2008236819 A JP 2008236819A JP 5292032 B2 JP5292032 B2 JP 5292032B2
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Japan
Prior art keywords
substrate
forming
raw material
polymer film
film
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Expired - Fee Related
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JP2008236819A
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English (en)
Japanese (ja)
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JP2010073743A (ja
JP2010073743A5 (https=
Inventor
有美子 河野
勇作 柏木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008236819A priority Critical patent/JP5292032B2/ja
Priority to CN2009801363461A priority patent/CN102160156B/zh
Priority to KR1020117006035A priority patent/KR101236160B1/ko
Priority to US13/063,779 priority patent/US8691338B2/en
Priority to PCT/JP2009/062956 priority patent/WO2010032547A1/ja
Publication of JP2010073743A publication Critical patent/JP2010073743A/ja
Publication of JP2010073743A5 publication Critical patent/JP2010073743A5/ja
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Publication of JP5292032B2 publication Critical patent/JP5292032B2/ja
Expired - Fee Related legal-status Critical Current
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046Polyimides containing oxygen in the form of ether bonds in the main chain
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/60Deposition of organic layers from vapour phase
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/105Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6328Deposition from the gas or vapour phase
    • H10P14/6332Deposition from the gas or vapour phase using thermal evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
JP2008236819A 2008-09-16 2008-09-16 重合膜の成膜方法および成膜装置 Expired - Fee Related JP5292032B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008236819A JP5292032B2 (ja) 2008-09-16 2008-09-16 重合膜の成膜方法および成膜装置
CN2009801363461A CN102160156B (zh) 2008-09-16 2009-07-17 聚合膜的成膜方法和成膜装置
KR1020117006035A KR101236160B1 (ko) 2008-09-16 2009-07-17 중합막의 성막 방법 및 성막 장치
US13/063,779 US8691338B2 (en) 2008-09-16 2009-07-17 Polymerized film forming method and polymerized film forming apparatus
PCT/JP2009/062956 WO2010032547A1 (ja) 2008-09-16 2009-07-17 重合膜の成膜方法および成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008236819A JP5292032B2 (ja) 2008-09-16 2008-09-16 重合膜の成膜方法および成膜装置

Publications (3)

Publication Number Publication Date
JP2010073743A JP2010073743A (ja) 2010-04-02
JP2010073743A5 JP2010073743A5 (https=) 2011-09-15
JP5292032B2 true JP5292032B2 (ja) 2013-09-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008236819A Expired - Fee Related JP5292032B2 (ja) 2008-09-16 2008-09-16 重合膜の成膜方法および成膜装置

Country Status (5)

Country Link
US (1) US8691338B2 (https=)
JP (1) JP5292032B2 (https=)
KR (1) KR101236160B1 (https=)
CN (1) CN102160156B (https=)
WO (1) WO2010032547A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014005478A (ja) * 2010-10-08 2014-01-16 Kaneka Corp 蒸着装置
JP2012209393A (ja) * 2011-03-29 2012-10-25 Tokyo Electron Ltd クリーニング方法及び成膜方法
CN103476962B (zh) * 2011-03-30 2015-07-01 夏普株式会社 蒸镀颗粒射出装置、蒸镀颗粒射出方法和蒸镀装置
JP6224479B2 (ja) * 2014-02-18 2017-11-01 東京エレクトロン株式会社 重合膜の成膜方法および成膜装置
CN106555159B (zh) * 2015-09-28 2018-12-11 北京北方华创微电子装备有限公司 一种基片的加热设备及加热方法
JP6851171B2 (ja) * 2016-10-14 2021-03-31 株式会社アルバック 微細機能素子及び微細機能素子の製造方法
KR102120537B1 (ko) * 2017-04-02 2020-06-09 황창훈 고해상도 oled 소자 제작용 면증발원 동시증발 증착공정방법
CN108570645B (zh) * 2017-11-30 2023-09-29 上海微电子装备(集团)股份有限公司 真空蒸镀装置及其蒸发头、真空蒸镀方法
JP6799550B2 (ja) * 2018-01-16 2020-12-16 東京エレクトロン株式会社 プラズマ処理装置の部品をクリーニングする方法
JP7236953B2 (ja) * 2019-08-05 2023-03-10 東京エレクトロン株式会社 成膜装置および成膜方法
CN120683456B (zh) * 2025-08-25 2025-11-04 浙江晟霖益嘉科技有限公司 一种双晶圆处理腔及其控制方法

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JP3231373B2 (ja) 1991-12-20 2001-11-19 松下電器産業株式会社 合成樹脂被膜の形成装置及び形成方法
JPH09326388A (ja) * 1996-06-05 1997-12-16 Ulvac Japan Ltd 低比誘電率高分子膜の形成方法及び層間絶縁膜の形成方法並びに低比誘電率高分子膜形成装置
US5937272A (en) * 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
JP2001011176A (ja) * 1999-06-25 2001-01-16 Matsushita Electric Works Ltd ポリイミド皮膜の形成方法及びポリイミド皮膜
JP2002285320A (ja) * 2001-03-27 2002-10-03 Fukushima Prefecture 有機高分子薄膜の形成方法
WO2004070802A1 (ja) * 2003-02-04 2004-08-19 Tokyo Electron Limited 処理システム及び処理システムの稼働方法
JP4257576B2 (ja) * 2003-03-25 2009-04-22 ローム株式会社 成膜装置
WO2005109486A1 (en) * 2004-05-12 2005-11-17 Viatron Technologies Inc. System for heat treatment of semiconductor device
JP2006351814A (ja) 2005-06-15 2006-12-28 Tokyo Electron Ltd クリーニング方法、コンピュータプログラム及び成膜装置
WO2008069259A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
KR20090028413A (ko) * 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판

Also Published As

Publication number Publication date
WO2010032547A1 (ja) 2010-03-25
CN102160156A (zh) 2011-08-17
KR101236160B1 (ko) 2013-02-22
KR20110051250A (ko) 2011-05-17
US8691338B2 (en) 2014-04-08
JP2010073743A (ja) 2010-04-02
CN102160156B (zh) 2013-04-17
US20110171384A1 (en) 2011-07-14

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