JP5604289B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5604289B2 JP5604289B2 JP2010286406A JP2010286406A JP5604289B2 JP 5604289 B2 JP5604289 B2 JP 5604289B2 JP 2010286406 A JP2010286406 A JP 2010286406A JP 2010286406 A JP2010286406 A JP 2010286406A JP 5604289 B2 JP5604289 B2 JP 5604289B2
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- source gas
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- 0 *c(cc1)ccc1Oc(cc1)ccc1N Chemical compound *c(cc1)ccc1Oc(cc1)ccc1N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/34—Applying different liquids or other fluent materials simultaneously
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Robotics (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Description
(第1の実施の形態)
最初に、本発明の第1の実施の形態に係る成膜装置について説明する。本実施の形態に係る成膜装置は、芳香族酸二無水物よりなる第1の原料を気化した第1の原料ガスと、芳香族ジアミンよりなる第2の原料を気化した第2の原料ガスとを、成膜容器内に設置されている基板に供給することによって、基板にポリイミド膜を成膜する成膜装置である。
τ=τ0exp(Ed/RT) (2)
により求めることができる。ここで、PMDAモノマーの脱離活性化エネルギーEdを100kJ/mol、ODAモノマーの脱離活性化エネルギーEdを170kJ/molとすることができる。
(第1の実施の形態の第1の変形例)
次に、図19から図21を参照し、本発明の第1の実施の形態の第1の変形例に係る成膜装置について説明する。
(第1の実施の形態の第2の変形例)
次に、図22を参照し、本発明の第1の実施の形態の第2の変形例に係る成膜装置について説明する。
(第2の実施の形態)
次に、図23及び図24を参照し、本発明の第2の実施の形態に係る成膜装置について説明する。
43 蓋体(基板保持部)
44、44a、44b ボート(基板保持部)
56 複板ユニット
60 成膜容器
62 ヒータ(基板加熱部)
70 供給機構
71 原料ガス供給部
72 インジェクタ
73a 供給管
73b 内側供給管
75 供給孔
76 開口
77、77a、77b 供給管加熱機構
90 制御部
W ウェハ
Claims (6)
- 芳香族酸二無水物よりなる第1の原料ガスと、芳香族ジアミンよりなる第2の原料ガスとを、成膜容器内に保持されている基板に供給し、供給した前記第1の原料ガスと前記第2の原料ガスとを前記基板の表面で熱重合反応させることによって、前記基板にポリイミド膜を成膜する成膜装置において、
前記成膜容器内で基板を保持する基板保持部と、
前記基板保持部に保持されている基板を加熱する基板加熱部と、
前記成膜容器内に設けられるとともに、前記第1の原料ガス及び前記第2の原料ガスを供給するための供給孔が形成された、供給管を含み、前記供給孔を介して前記成膜容器内に前記第1の原料ガス及び前記第2の原料ガスを供給する供給機構と、
前記基板保持部と前記基板加熱部と前記供給機構とを制御する制御部と
を有し、
前記制御部は、前記供給機構により前記第1の原料ガス及び前記第2の原料ガスを供給するとともに、前記基板加熱部により、前記基板保持部に保持されている基板を、熱重合反応が生ずる温度範囲で加熱することによって、ポリイミド膜の成膜速度を制御するものであり、
前記供給機構は、前記供給管の前記供給孔が形成されている部分よりも、前記供給管の延在方向において上流側の部分に収容されるとともに、前記第1の原料ガス及び前記第2の原料ガスのいずれか一方の原料ガスを供給するための開口が形成された、内側供給管を含み、前記供給管を流れる前記第1の原料ガス及び前記第2の原料ガスの他方の原料ガスに、前記内側供給管を流れる前記一方の原料ガスを、前記開口を介して合流させて前記供給管内で混合し、前記供給管内で混合した前記第1の原料ガスと前記第2の原料ガスとを、前記供給孔を介して前記成膜容器内に供給するものであり、
前記供給機構は、前記供給管を流れる前記第1の原料ガス及び前記第2の原料ガスを、熱重合反応が生ずる温度範囲よりも高い温度に加熱する、供給管加熱機構を含む、
成膜装置。 - 前記基板保持部は、複数の基板を上下方向に所定の保持間隔で保持するものであり、
前記供給管は、上下方向に延在するように設けられるとともに、複数の供給孔が形成されており、
前記供給管加熱機構は、上下方向に配置された、互いに独立に温度制御可能な複数の供給管加熱機構である、請求項1に記載の成膜装置。 - 前記基板保持部は、上下に隣り合う基板の裏面同士が対向するか、又は、上下に隣り合う基板の表面同士が対向するとともに、裏面同士で対向して上下に隣り合う2枚の基板の間隔が、表面同士で対向して上下に隣り合う2枚の基板の間隔よりも狭くなるように、前記複数の基板を上下方向に保持するものである、請求項2に記載の成膜装置。
- 前記基板保持部は、裏面同士で対向して上下に隣り合う2枚の基板の隙間を塞ぐ塞ぎ部材を有する、請求項3に記載の成膜装置。
- 前記開口は、前記開口の方向が、前記供給管の延在する方向に垂直な断面視で、前記供給孔の方向と異なる方向を向くように形成されている、請求項4に記載の成膜装置。
- 前記芳香族酸二無水物は、ピロメリット酸二無水物であり、
前記芳香族ジアミンは、4,4’−ジアミノジフェニルエーテルである、請求項1から請求項5のいずれか一項に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010286406A JP5604289B2 (ja) | 2010-12-22 | 2010-12-22 | 成膜装置 |
KR1020110139002A KR20120071345A (ko) | 2010-12-22 | 2011-12-21 | 성막 장치 |
TW100147613A TWI523080B (zh) | 2010-12-22 | 2011-12-21 | 成膜裝置(二) |
US13/334,774 US20120160169A1 (en) | 2010-12-22 | 2011-12-22 | Film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010286406A JP5604289B2 (ja) | 2010-12-22 | 2010-12-22 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012134388A JP2012134388A (ja) | 2012-07-12 |
JP5604289B2 true JP5604289B2 (ja) | 2014-10-08 |
Family
ID=46315166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010286406A Expired - Fee Related JP5604289B2 (ja) | 2010-12-22 | 2010-12-22 | 成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120160169A1 (ja) |
JP (1) | JP5604289B2 (ja) |
KR (1) | KR20120071345A (ja) |
TW (1) | TWI523080B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5243519B2 (ja) * | 2010-12-22 | 2013-07-24 | 東京エレクトロン株式会社 | 成膜装置 |
JP5797176B2 (ja) | 2012-09-14 | 2015-10-21 | 東京エレクトロン株式会社 | スペーサ、スペーサの搬送方法、処理方法、及び、処理装置 |
US20140144380A1 (en) * | 2012-11-28 | 2014-05-29 | Samsung Electronics Co., Ltd. | Gas supply pipes and chemical vapor deposition apparatus |
JP6054213B2 (ja) * | 2013-03-11 | 2016-12-27 | 東京エレクトロン株式会社 | 支持部材及び半導体製造装置 |
US9920844B2 (en) | 2014-11-26 | 2018-03-20 | Lam Research Corporation | Valve manifold deadleg elimination via reentrant flow path |
US9631276B2 (en) * | 2014-11-26 | 2017-04-25 | Lam Research Corporation | Systems and methods enabling low defect processing via controlled separation and delivery of chemicals during atomic layer deposition |
JP6458547B2 (ja) * | 2015-02-24 | 2019-01-30 | 株式会社デンソー | シャワーヘッド、シャワーヘッドシステム、及び成膜装置 |
KR101685096B1 (ko) * | 2015-11-17 | 2016-12-12 | 주식회사 유진테크 | 기판처리장치 및 이를 이용한 기판처리방법 |
JP6737215B2 (ja) * | 2017-03-16 | 2020-08-05 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US11661654B2 (en) | 2018-04-18 | 2023-05-30 | Lam Research Corporation | Substrate processing systems including gas delivery system with reduced dead legs |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5536918A (en) * | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
JP3292540B2 (ja) * | 1993-03-03 | 2002-06-17 | 東京エレクトロン株式会社 | 熱処理装置 |
US5928427A (en) * | 1994-12-16 | 1999-07-27 | Hwang; Chul-Ju | Apparatus for low pressure chemical vapor deposition |
JP3845950B2 (ja) * | 1997-04-30 | 2006-11-15 | 株式会社村田製作所 | Mocvd装置 |
JP4283910B2 (ja) * | 1998-07-07 | 2009-06-24 | 株式会社アルバック | 半導体製造装置およびポリイミド膜の形成方法 |
JP2003347047A (ja) * | 2002-05-28 | 2003-12-05 | Sony Corp | 有機膜形成装置 |
US20050287806A1 (en) * | 2004-06-24 | 2005-12-29 | Hiroyuki Matsuura | Vertical CVD apparatus and CVD method using the same |
JP4971089B2 (ja) * | 2007-09-26 | 2012-07-11 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
JP5198106B2 (ja) * | 2008-03-25 | 2013-05-15 | 東京エレクトロン株式会社 | 成膜装置、及び成膜方法 |
JP2009267345A (ja) * | 2008-04-01 | 2009-11-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP5217663B2 (ja) * | 2008-06-11 | 2013-06-19 | 東京エレクトロン株式会社 | 被処理体の熱処理装置及び熱処理方法 |
JP2010219145A (ja) * | 2009-03-13 | 2010-09-30 | Tokyo Electron Ltd | 成膜装置 |
-
2010
- 2010-12-22 JP JP2010286406A patent/JP5604289B2/ja not_active Expired - Fee Related
-
2011
- 2011-12-21 KR KR1020110139002A patent/KR20120071345A/ko not_active Application Discontinuation
- 2011-12-21 TW TW100147613A patent/TWI523080B/zh not_active IP Right Cessation
- 2011-12-22 US US13/334,774 patent/US20120160169A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20120071345A (ko) | 2012-07-02 |
JP2012134388A (ja) | 2012-07-12 |
TWI523080B (zh) | 2016-02-21 |
TW201237940A (en) | 2012-09-16 |
US20120160169A1 (en) | 2012-06-28 |
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