KR101236160B1 - 중합막의 성막 방법 및 성막 장치 - Google Patents

중합막의 성막 방법 및 성막 장치 Download PDF

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Publication number
KR101236160B1
KR101236160B1 KR1020117006035A KR20117006035A KR101236160B1 KR 101236160 B1 KR101236160 B1 KR 101236160B1 KR 1020117006035 A KR1020117006035 A KR 1020117006035A KR 20117006035 A KR20117006035 A KR 20117006035A KR 101236160 B1 KR101236160 B1 KR 101236160B1
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film
substrate
raw material
forming
temperature
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20110051250A (ko
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유미코 가와노
유사쿠 카시와기
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도쿄엘렉트론가부시키가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/105—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
KR1020117006035A 2008-09-16 2009-07-17 중합막의 성막 방법 및 성막 장치 Expired - Fee Related KR101236160B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008236819A JP5292032B2 (ja) 2008-09-16 2008-09-16 重合膜の成膜方法および成膜装置
JPJP-P-2008-236819 2008-09-16
PCT/JP2009/062956 WO2010032547A1 (ja) 2008-09-16 2009-07-17 重合膜の成膜方法および成膜装置

Publications (2)

Publication Number Publication Date
KR20110051250A KR20110051250A (ko) 2011-05-17
KR101236160B1 true KR101236160B1 (ko) 2013-02-22

Family

ID=42039389

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117006035A Expired - Fee Related KR101236160B1 (ko) 2008-09-16 2009-07-17 중합막의 성막 방법 및 성막 장치

Country Status (5)

Country Link
US (1) US8691338B2 (https=)
JP (1) JP5292032B2 (https=)
KR (1) KR101236160B1 (https=)
CN (1) CN102160156B (https=)
WO (1) WO2010032547A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014005478A (ja) * 2010-10-08 2014-01-16 Kaneka Corp 蒸着装置
JP2012209393A (ja) * 2011-03-29 2012-10-25 Tokyo Electron Ltd クリーニング方法及び成膜方法
CN103476962B (zh) * 2011-03-30 2015-07-01 夏普株式会社 蒸镀颗粒射出装置、蒸镀颗粒射出方法和蒸镀装置
JP6224479B2 (ja) * 2014-02-18 2017-11-01 東京エレクトロン株式会社 重合膜の成膜方法および成膜装置
CN106555159B (zh) * 2015-09-28 2018-12-11 北京北方华创微电子装备有限公司 一种基片的加热设备及加热方法
JP6851171B2 (ja) * 2016-10-14 2021-03-31 株式会社アルバック 微細機能素子及び微細機能素子の製造方法
KR102120537B1 (ko) * 2017-04-02 2020-06-09 황창훈 고해상도 ｏｌｅｄ 소자 제작용 면증발원 동시증발 증착공정방법
CN108570645B (zh) * 2017-11-30 2023-09-29 上海微电子装备（集团）股份有限公司 真空蒸镀装置及其蒸发头、真空蒸镀方法
JP6799550B2 (ja) * 2018-01-16 2020-12-16 東京エレクトロン株式会社 プラズマ処理装置の部品をクリーニングする方法
JP7236953B2 (ja) * 2019-08-05 2023-03-10 東京エレクトロン株式会社 成膜装置および成膜方法
CN120683456B (zh) * 2025-08-25 2025-11-04 浙江晟霖益嘉科技有限公司 一种双晶圆处理腔及其控制方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001011176A (ja) 1999-06-25 2001-01-16 Matsushita Electric Works Ltd ポリイミド皮膜の形成方法及びポリイミド皮膜
JP2002285320A (ja) 2001-03-27 2002-10-03 Fukushima Prefecture 有機高分子薄膜の形成方法
KR20050097969A (ko) * 2003-02-04 2005-10-10 동경 엘렉트론 주식회사 처리시스템 및 이 처리시스템의 가동방법
KR20050109601A (ko) * 2003-03-25 2005-11-21 로무 가부시키가이샤 성막 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3231373B2 (ja) 1991-12-20 2001-11-19 松下電器産業株式会社 合成樹脂被膜の形成装置及び形成方法
JPH09326388A (ja) * 1996-06-05 1997-12-16 Ulvac Japan Ltd 低比誘電率高分子膜の形成方法及び層間絶縁膜の形成方法並びに低比誘電率高分子膜形成装置
US5937272A (en) * 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
WO2005109486A1 (en) * 2004-05-12 2005-11-17 Viatron Technologies Inc. System for heat treatment of semiconductor device
JP2006351814A (ja) 2005-06-15 2006-12-28 Tokyo Electron Ltd クリーニング方法、コンピュータプログラム及び成膜装置
WO2008069259A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
KR20090028413A (ko) * 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001011176A (ja) 1999-06-25 2001-01-16 Matsushita Electric Works Ltd ポリイミド皮膜の形成方法及びポリイミド皮膜
JP2002285320A (ja) 2001-03-27 2002-10-03 Fukushima Prefecture 有機高分子薄膜の形成方法
KR20050097969A (ko) * 2003-02-04 2005-10-10 동경 엘렉트론 주식회사 처리시스템 및 이 처리시스템의 가동방법
KR20050109601A (ko) * 2003-03-25 2005-11-21 로무 가부시키가이샤 성막 장치

Also Published As

Publication number Publication date
WO2010032547A1 (ja) 2010-03-25
CN102160156A (zh) 2011-08-17
KR20110051250A (ko) 2011-05-17
US8691338B2 (en) 2014-04-08
JP2010073743A (ja) 2010-04-02
CN102160156B (zh) 2013-04-17
JP5292032B2 (ja) 2013-09-18
US20110171384A1 (en) 2011-07-14

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