JP5291157B2 - パワーデバイス用のプローブカード - Google Patents

パワーデバイス用のプローブカード Download PDF

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Publication number
JP5291157B2
JP5291157B2 JP2011168425A JP2011168425A JP5291157B2 JP 5291157 B2 JP5291157 B2 JP 5291157B2 JP 2011168425 A JP2011168425 A JP 2011168425A JP 2011168425 A JP2011168425 A JP 2011168425A JP 5291157 B2 JP5291157 B2 JP 5291157B2
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JP
Japan
Prior art keywords
probe
probe card
power device
tester
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011168425A
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English (en)
Japanese (ja)
Other versions
JP2013032938A (ja
JP2013032938A5 (enExample
Inventor
榮一 篠原
郁男 小笠原
健 田岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2011168425A priority Critical patent/JP5291157B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020147005362A priority patent/KR101835680B1/ko
Priority to EP12819684.7A priority patent/EP2762897A4/en
Priority to PCT/JP2012/069925 priority patent/WO2013018910A1/ja
Priority to US14/234,679 priority patent/US9322844B2/en
Priority to CN201280037370.1A priority patent/CN103703381B/zh
Priority to TW101127540A priority patent/TWI541514B/zh
Publication of JP2013032938A publication Critical patent/JP2013032938A/ja
Publication of JP2013032938A5 publication Critical patent/JP2013032938A5/ja
Application granted granted Critical
Publication of JP5291157B2 publication Critical patent/JP5291157B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06722—Spring-loaded
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/263—Circuits therefor for testing thyristors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06777—High voltage probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP2011168425A 2011-08-01 2011-08-01 パワーデバイス用のプローブカード Active JP5291157B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011168425A JP5291157B2 (ja) 2011-08-01 2011-08-01 パワーデバイス用のプローブカード
EP12819684.7A EP2762897A4 (en) 2011-08-01 2012-07-30 NEEDLE CARD FOR ONE PERFORMANCE DEVICE
PCT/JP2012/069925 WO2013018910A1 (ja) 2011-08-01 2012-07-30 パワーデバイス用のプローブカード
US14/234,679 US9322844B2 (en) 2011-08-01 2012-07-30 Probe card for power device
KR1020147005362A KR101835680B1 (ko) 2011-08-01 2012-07-30 파워 디바이스용의 프로브 카드
CN201280037370.1A CN103703381B (zh) 2011-08-01 2012-07-30 功率器件用的探针卡
TW101127540A TWI541514B (zh) 2011-08-01 2012-07-31 Power element with probe card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011168425A JP5291157B2 (ja) 2011-08-01 2011-08-01 パワーデバイス用のプローブカード

Publications (3)

Publication Number Publication Date
JP2013032938A JP2013032938A (ja) 2013-02-14
JP2013032938A5 JP2013032938A5 (enExample) 2013-03-28
JP5291157B2 true JP5291157B2 (ja) 2013-09-18

Family

ID=47629422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011168425A Active JP5291157B2 (ja) 2011-08-01 2011-08-01 パワーデバイス用のプローブカード

Country Status (7)

Country Link
US (1) US9322844B2 (enExample)
EP (1) EP2762897A4 (enExample)
JP (1) JP5291157B2 (enExample)
KR (1) KR101835680B1 (enExample)
CN (1) CN103703381B (enExample)
TW (1) TWI541514B (enExample)
WO (1) WO2013018910A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6042761B2 (ja) * 2013-03-28 2016-12-14 東京エレクトロン株式会社 プローブ装置
JP6042760B2 (ja) * 2013-03-28 2016-12-14 東京エレクトロン株式会社 プローブ装置
JP5936579B2 (ja) * 2013-05-08 2016-06-22 本田技研工業株式会社 電流印加装置
JP6045993B2 (ja) * 2013-07-08 2016-12-14 東京エレクトロン株式会社 プローブ装置
US10527647B2 (en) * 2013-07-09 2020-01-07 Formfactor, Inc. Probe head with inductance reducing structure
JP6289962B2 (ja) 2013-07-11 2018-03-07 東京エレクトロン株式会社 プローブ装置
US10281518B2 (en) * 2014-02-25 2019-05-07 Formfactor Beaverton, Inc. Systems and methods for on-wafer dynamic testing of electronic devices
JP6447497B2 (ja) * 2014-03-11 2019-01-09 新東工業株式会社 被試験デバイスの検査システム、及びその操作方法
JP6218718B2 (ja) 2014-10-22 2017-10-25 三菱電機株式会社 半導体評価装置及びその評価方法
TWI580969B (zh) * 2015-04-14 2017-05-01 Mpi Corp Probe card
CN106707130B (zh) * 2017-01-04 2019-05-03 株洲中车时代电气股份有限公司 一种igbt模块测试装置
KR101845652B1 (ko) * 2017-01-17 2018-04-04 주식회사 텝스 부품 실장된 웨이퍼 테스트를 위한 하이브리드 프로브 카드
CN109298305B (zh) * 2017-07-24 2020-12-11 株洲中车时代半导体有限公司 一种针对压接式igbt模块子模组的测试装置及方法
KR102243839B1 (ko) * 2018-07-13 2021-04-22 도쿄엘렉트론가부시키가이샤 중간 접속 부재, 및 검사 장치
CN113341294B (zh) * 2021-06-24 2024-12-17 浙江大学绍兴微电子研究中心 晶圆上一开关元器件的电气特性测试装置
AT525517A1 (de) * 2021-10-13 2023-04-15 Gaggl Dipl Ing Dr Rainer Prüfvorrichtung und Anordnung mit dieser

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08184639A (ja) * 1994-12-28 1996-07-16 Sony Tektronix Corp 接触子構体
US7250779B2 (en) * 2002-11-25 2007-07-31 Cascade Microtech, Inc. Probe station with low inductance path
JP4387125B2 (ja) * 2003-06-09 2009-12-16 東京エレクトロン株式会社 検査方法及び検査装置
JP4784158B2 (ja) * 2005-06-07 2011-10-05 三菱電機株式会社 プローブカード、およびこれを用いた直流特性測定方法
JP2007040926A (ja) * 2005-08-05 2007-02-15 Tokyo Seimitsu Co Ltd プローバ
JP4979214B2 (ja) * 2005-08-31 2012-07-18 日本発條株式会社 プローブカード
JP2007123430A (ja) * 2005-10-26 2007-05-17 Tokyo Seimitsu Co Ltd 半導体ウエハ及び半導体検査方法
US7521947B2 (en) * 2006-05-23 2009-04-21 Integrated Technology Corporation Probe needle protection method for high current probe testing of power devices
MY147251A (en) * 2006-05-23 2012-11-14 Integrated Technology Corp Probe needle protection method for high current probe testing of power devices
US7498824B2 (en) * 2006-08-22 2009-03-03 Formfactor, Inc. Method and apparatus for making a determination relating to resistance of probes
JP5016892B2 (ja) * 2006-10-17 2012-09-05 東京エレクトロン株式会社 検査装置及び検査方法
JP2011047782A (ja) * 2009-08-27 2011-03-10 Tokyo Electron Ltd 半導体素子評価方法
JP5432700B2 (ja) * 2009-12-28 2014-03-05 株式会社日本マイクロニクス 半導体デバイスの検査装置
JP5296117B2 (ja) 2010-03-12 2013-09-25 東京エレクトロン株式会社 プローブ装置
CN102072974A (zh) * 2010-11-11 2011-05-25 嘉兴斯达微电子有限公司 一种功率模块可靠性试验夹具

Also Published As

Publication number Publication date
EP2762897A4 (en) 2015-04-01
US20140176173A1 (en) 2014-06-26
KR101835680B1 (ko) 2018-03-07
KR20140057571A (ko) 2014-05-13
US9322844B2 (en) 2016-04-26
EP2762897A1 (en) 2014-08-06
JP2013032938A (ja) 2013-02-14
CN103703381A (zh) 2014-04-02
TW201326827A (zh) 2013-07-01
TWI541514B (zh) 2016-07-11
WO2013018910A1 (ja) 2013-02-07
CN103703381B (zh) 2016-12-21

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