MY147251A - Probe needle protection method for high current probe testing of power devices - Google Patents

Probe needle protection method for high current probe testing of power devices

Info

Publication number
MY147251A
MY147251A MYPI20084769A MYPI20084769A MY147251A MY 147251 A MY147251 A MY 147251A MY PI20084769 A MYPI20084769 A MY PI20084769A MY PI20084769 A MYPI20084769 A MY PI20084769A MY 147251 A MY147251 A MY 147251A
Authority
MY
Malaysia
Prior art keywords
current
probe
probes
high current
power devices
Prior art date
Application number
MYPI20084769A
Inventor
Rogers Gary
Clauter Steve
Schwartz Rodney
Ukai Taichi
Lambright Joe
Lohr Dave
Original Assignee
Integrated Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Technology Corp filed Critical Integrated Technology Corp
Publication of MY147251A publication Critical patent/MY147251A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/36—Overload-protection arrangements or circuits for electric measuring instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

28 PROBE NEEDLE PROTECTION METHOD FOR HIGH CURRENT PROBE TESTING OF POWER DEVICES ABSTRACT 5 A TEST SYSTEM, APPARATUS AND METHOD FOR APPLYING HIGH CURRENT TEST STIMULI TO A SEMICONDUCTOR DEVICE (4, 10, 20) IN WAFER OR CHIP FORM INCLUDES A PLURALITY OF PROBES (2) FOR ELECTRICALLY COUPLING TO RESPECTIVE CONTACT POINTS (3) ON THE SEMICONDUCTOR DEVICE, A PLURALITY OF CURRENT LIMITERS (5) ELECTRICALLY COUPLED TO RESPECTIVE ONES OF THE PLURALITY OF PROBES (2), AND A CURRENT SENSOR (6) ELECTRICALLY COUPLED TO THE PLURALITY OF PROBES. THE CURRENT LIMITERS (5) ARE 1 0 OPERATIVE TO LIMIT CURRENT FLOW PASSING THROUGH A RESPECTIVE PROBE (2), AND THE CURRENT SENSOR IS OPERATIVE TO PROVIDE A SIGNAL WHEN DETECTED CURRENT IN ANY CONTACT OF THE PLURALITY OF PROBES EXCEEDS A THRESHOLD LEVEL. 1 5
MYPI20084769A 2006-05-23 2007-05-23 Probe needle protection method for high current probe testing of power devices MY147251A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74798106P 2006-05-23 2006-05-23

Publications (1)

Publication Number Publication Date
MY147251A true MY147251A (en) 2012-11-14

Family

ID=38724104

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20084769A MY147251A (en) 2006-05-23 2007-05-23 Probe needle protection method for high current probe testing of power devices

Country Status (3)

Country Link
JP (1) JP2009538428A (en)
MY (1) MY147251A (en)
WO (1) WO2007137284A2 (en)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
WO2012031362A1 (en) * 2010-09-07 2012-03-15 Corporation De L ' Ecole Polytechnique De Montreal Methods, apparatus and system to support large-scale micro- systems including embedded and distributed power supply, thermal regulation, multi-distributed-sensors and electrical signal propagation
JP5291157B2 (en) * 2011-08-01 2013-09-18 東京エレクトロン株式会社 Probe card for power devices
JP6092729B2 (en) * 2013-07-19 2017-03-08 新光電気工業株式会社 Probe card and manufacturing method thereof
US11041900B2 (en) * 2014-03-26 2021-06-22 Teradyne, Inc. Equi-resistant probe distribution for high-accuracy voltage measurements at the wafer level
US10698020B2 (en) * 2014-03-26 2020-06-30 Teradyne, Inc. Current regulation for accurate and low-cost voltage measurements at the wafer level
JP6339834B2 (en) * 2014-03-27 2018-06-06 東京エレクトロン株式会社 Board inspection equipment
JP6351442B2 (en) * 2014-08-28 2018-07-04 ルネサスエレクトロニクス株式会社 Semiconductor test equipment
US10330703B2 (en) * 2017-04-04 2019-06-25 Formfactor Beaverton, Inc. Probe systems and methods including electric contact detection
CN110426622B (en) * 2019-08-15 2024-08-20 北京华峰测控技术股份有限公司 Voltage and current source test circuit and test method
CN111562481B (en) * 2020-05-25 2022-08-02 中国电子科技集团公司第十三研究所 Compound semiconductor chip on-chip test circuit based on power-on probe
CN116243095B (en) * 2023-05-10 2023-07-21 深圳弘远电气有限公司 Automatic program control-based test circuit, test device and control method thereof
CN117214649B (en) * 2023-11-07 2024-07-02 珠海格力电子元器件有限公司 Power device testing device and method

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Publication number Priority date Publication date Assignee Title
JPS60142526A (en) * 1983-12-29 1985-07-27 Toshiba Corp Measurement of electrical characteristics of semiconductor element
JPH0469715A (en) * 1990-07-10 1992-03-04 Mitsubishi Electric Corp Dc power unit
US5365180A (en) * 1993-04-16 1994-11-15 National Semiconductor Corporation Method for measuring contact resistance
JP2775222B2 (en) * 1993-09-14 1998-07-16 ソニー・テクトロニクス株式会社 Power control circuit
US5642035A (en) * 1994-06-16 1997-06-24 Bio-Rad Laboratories Transfection high-voltage controller
US5600257A (en) * 1995-08-09 1997-02-04 International Business Machines Corporation Semiconductor wafer test and burn-in
JPH104624A (en) * 1996-06-13 1998-01-06 Nec Gumma Ltd Overvoltage protective circuit and electronic circuit furnished therewith
JP2001053120A (en) * 1999-08-09 2001-02-23 Sharp Corp Semiconductor integrated circuit with overcurrent detection fountain and manufacture thereof
JP2002095157A (en) * 2000-07-10 2002-03-29 Matsushita Electric Ind Co Ltd Overcharge preventing circuit
JP2003038679A (en) * 2001-08-02 2003-02-12 Alinco Inc Motor-driven type walker
JP2004085247A (en) * 2002-08-23 2004-03-18 Mitsubishi Electric Corp Probe card
DE10308333A1 (en) * 2003-02-26 2004-09-16 Infineon Technologies Ag Burn-in system for semiconductor devices on wafer plane, has power supplies connected to input contacts of contacting device, and with signal contacts connected to measuring contacts
AT500263B1 (en) * 2004-03-15 2007-04-15 T I P S Messtechnik Gmbh METHOD AND CIRCUIT FOR THE PROTECTION OF TEST CONTACTS IN HIGH-CIRCULAR MEASUREMENT OF SEMICONDUCTOR COMPONENTS
US7307433B2 (en) * 2004-04-21 2007-12-11 Formfactor, Inc. Intelligent probe card architecture
JP2006038599A (en) * 2004-07-26 2006-02-09 Nec Electronics Corp Contact resistance measuring method, contact resistance measuring device and semiconductor wafer
US7029932B1 (en) * 2005-02-07 2006-04-18 Texas Instruments Incorporated Circuit and method for measuring contact resistance

Also Published As

Publication number Publication date
WO2007137284A3 (en) 2008-03-27
WO2007137284A2 (en) 2007-11-29
JP2009538428A (en) 2009-11-05

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