SG10201809420TA - Current regulation for accurate and low-cost voltage measurements at the wafer level - Google Patents
Current regulation for accurate and low-cost voltage measurements at the wafer levelInfo
- Publication number
- SG10201809420TA SG10201809420TA SG10201809420TA SG10201809420TA SG10201809420TA SG 10201809420T A SG10201809420T A SG 10201809420TA SG 10201809420T A SG10201809420T A SG 10201809420TA SG 10201809420T A SG10201809420T A SG 10201809420TA SG 10201809420T A SG10201809420T A SG 10201809420TA
- Authority
- SG
- Singapore
- Prior art keywords
- current
- accurate
- voltage
- resistance
- pad
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/0675—Needle-like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/20—Measuring earth resistance; Measuring contact resistance, e.g. of earth connections, e.g. plates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
CURRENT REGULATION FOR ACCURATE AND LOW-COST VOLTAGE MEASUREMENTS AT THE WAFER LEVEL A test system and test techniques for accurate high current parametric testing of semiconductor devices. In operation, the test system supplies a current to the semiconductor device and measures a voltage on the device. The testing system may use the measured voltage to compute an ON resistance for the high-current semiconductor device. In one technique, multiple force needles contact a pad in positions that provide equi-resistant paths to one or more sense needles contacting the same pad. In another technique, current flow through the force needles is regulated such that voltage at the pad of the device under test is representative of the ON resistance of the device and independent of contact resistance of the force needle. Another technique entails generating an alarm indication when the contact resistance of a force needle exceeds a threshold. Fig. 1
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/225,951 US10698020B2 (en) | 2014-03-26 | 2014-03-26 | Current regulation for accurate and low-cost voltage measurements at the wafer level |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201809420TA true SG10201809420TA (en) | 2018-11-29 |
Family
ID=54189968
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607060QA SG11201607060QA (en) | 2014-03-26 | 2015-03-18 | Current regulation for accurate and low-cost voltage measurements at the wafer level |
SG10201809420TA SG10201809420TA (en) | 2014-03-26 | 2015-03-18 | Current regulation for accurate and low-cost voltage measurements at the wafer level |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607060QA SG11201607060QA (en) | 2014-03-26 | 2015-03-18 | Current regulation for accurate and low-cost voltage measurements at the wafer level |
Country Status (6)
Country | Link |
---|---|
US (1) | US10698020B2 (en) |
JP (1) | JP6518682B2 (en) |
KR (1) | KR102277218B1 (en) |
CN (1) | CN106104783B (en) |
SG (2) | SG11201607060QA (en) |
WO (1) | WO2015148204A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11041900B2 (en) * | 2014-03-26 | 2021-06-22 | Teradyne, Inc. | Equi-resistant probe distribution for high-accuracy voltage measurements at the wafer level |
TWI580969B (en) * | 2015-04-14 | 2017-05-01 | Mpi Corp | Probe card |
KR102419083B1 (en) * | 2015-10-19 | 2022-07-07 | 한국전기연구원 | Measuring apparatus of semiconductor wafer |
CN108120853A (en) * | 2016-11-28 | 2018-06-05 | 联芯科技有限公司 | Chip test fixture |
PL234141B1 (en) * | 2017-12-29 | 2020-01-31 | Akademia Morska W Gdyni | Method and the system for measuring own and reciprocal thermal resistances in the electrically insulated module |
US11067629B2 (en) | 2019-06-03 | 2021-07-20 | Teradyne, Inc. | Automated test equipment for testing high-power electronic components |
CN113053774A (en) * | 2019-12-27 | 2021-06-29 | 迪科特测试科技(苏州)有限公司 | Probe apparatus |
CN112611950A (en) * | 2020-11-26 | 2021-04-06 | 中国计量大学 | Quantum chip detection tool and detection system |
CN113884716B (en) * | 2021-10-26 | 2024-05-10 | 江西龙芯微科技有限公司 | Integrated circuit wafer testing device and method |
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US4016483A (en) * | 1974-06-27 | 1977-04-05 | Rudin Marvin B | Microminiature integrated circuit impedance device including weighted elements and contactless switching means for fixing the impedance at a preselected value |
US4179652A (en) | 1978-02-21 | 1979-12-18 | Teradyne, Inc. | Analyzing electrical circuit boards |
US4175253A (en) | 1978-02-22 | 1979-11-20 | Teradyne, Inc. | Analyzing electrical circuit boards |
US4178543A (en) | 1978-02-23 | 1979-12-11 | Teradyne, Inc. | Analyzing electrical circuit boards |
US4176313A (en) | 1978-02-24 | 1979-11-27 | Teradyne, Inc. | Analyzing electrical circuit boards |
JPS60142526A (en) | 1983-12-29 | 1985-07-27 | Toshiba Corp | Measurement of electrical characteristics of semiconductor element |
JP2858390B2 (en) | 1994-03-02 | 1999-02-17 | 株式会社デンソー | Method for measuring characteristics of vertical semiconductor device |
KR0149325B1 (en) * | 1995-05-17 | 1998-12-01 | 김광호 | Method for probe control |
US6218846B1 (en) * | 1997-08-01 | 2001-04-17 | Worcester Polytechnic Institute | Multi-probe impedance measurement system and method for detection of flaws in conductive articles |
JP2001041999A (en) | 1999-07-30 | 2001-02-16 | Rohm Co Ltd | Method for detecting internal resistance of semiconductor chip |
US6556034B1 (en) | 2000-11-22 | 2003-04-29 | Teradyne, Inc. | High speed and high accuracy DUT power supply with active boost circuitry |
US6791344B2 (en) | 2000-12-28 | 2004-09-14 | International Business Machines Corporation | System for and method of testing a microelectronic device using a dual probe technique |
US6452436B1 (en) | 2001-04-12 | 2002-09-17 | Teradyne, Inc. | Apparatus and method for managing automatic transitions between multiple feedback paths |
KR20020084795A (en) * | 2001-05-04 | 2002-11-11 | 에코앤바이오 주식회사 | Native plant mat and a method of producing same |
US6972576B1 (en) | 2002-05-31 | 2005-12-06 | Advanced Micro Devices, Inc. | Electrical critical dimension measurement and defect detection for reticle fabrication |
JP3574444B2 (en) | 2002-08-27 | 2004-10-06 | 沖電気工業株式会社 | Method of measuring contact resistance of probe and method of testing semiconductor device |
US6897666B2 (en) | 2002-12-31 | 2005-05-24 | Intel Corporation | Embedded voltage regulator and active transient control device in probe head for improved power delivery and method |
US7414418B2 (en) * | 2005-01-07 | 2008-08-19 | Formfactor, Inc. | Method and apparatus for increasing operating frequency of a system for testing electronic devices |
WO2007137284A2 (en) | 2006-05-23 | 2007-11-29 | Integrated Technology Corporation | Probe needle protection method for high current probe testing of power devices |
JP5572084B2 (en) * | 2007-04-03 | 2014-08-13 | スキャニメトリクス,インコーポレイテッド | Electronic circuit testing using active probe integrated circuits |
US20110285416A1 (en) * | 2008-06-30 | 2011-11-24 | Petersen Dirch H | Multi-point probe for testing electrical properties and a method of producing a multi-point probe |
JP5490425B2 (en) | 2009-02-26 | 2014-05-14 | ラピスセミコンダクタ株式会社 | Method for measuring electrical characteristics of semiconductor chip |
US7795897B1 (en) * | 2009-03-27 | 2010-09-14 | Advantest Corporation | Test apparatus and driver circuit |
JP2013531779A (en) | 2010-05-05 | 2013-08-08 | テラダイン、 インコーポレイテッド | System for simultaneous testing of semiconductor devices |
WO2013133809A1 (en) | 2012-03-06 | 2013-09-12 | Intel Corporation | An interposer to regulate current for wafer test tooling |
JP2015055550A (en) | 2013-09-12 | 2015-03-23 | 株式会社東芝 | Semiconductor measuring device |
US11041900B2 (en) | 2014-03-26 | 2021-06-22 | Teradyne, Inc. | Equi-resistant probe distribution for high-accuracy voltage measurements at the wafer level |
-
2014
- 2014-03-26 US US14/225,951 patent/US10698020B2/en active Active
-
2015
- 2015-03-18 SG SG11201607060QA patent/SG11201607060QA/en unknown
- 2015-03-18 WO PCT/US2015/021203 patent/WO2015148204A1/en active Application Filing
- 2015-03-18 SG SG10201809420TA patent/SG10201809420TA/en unknown
- 2015-03-18 JP JP2016557295A patent/JP6518682B2/en active Active
- 2015-03-18 KR KR1020167029653A patent/KR102277218B1/en not_active Application Discontinuation
- 2015-03-18 CN CN201580014874.5A patent/CN106104783B/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10698020B2 (en) | 2020-06-30 |
JP6518682B2 (en) | 2019-05-22 |
CN106104783A (en) | 2016-11-09 |
CN106104783B (en) | 2020-12-15 |
WO2015148204A1 (en) | 2015-10-01 |
KR102277218B1 (en) | 2021-07-15 |
SG11201607060QA (en) | 2016-10-28 |
KR20160138486A (en) | 2016-12-05 |
JP2017510988A (en) | 2017-04-13 |
US20150276799A1 (en) | 2015-10-01 |
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