JP5274022B2 - 半導体製造において使用するための石英ガラスの構成部品を形成する方法およびその方法に従って得られた構成部品 - Google Patents
半導体製造において使用するための石英ガラスの構成部品を形成する方法およびその方法に従って得られた構成部品 Download PDFInfo
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- JP5274022B2 JP5274022B2 JP2007553493A JP2007553493A JP5274022B2 JP 5274022 B2 JP5274022 B2 JP 5274022B2 JP 2007553493 A JP2007553493 A JP 2007553493A JP 2007553493 A JP2007553493 A JP 2007553493A JP 5274022 B2 JP5274022 B2 JP 5274022B2
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- etching
- quartz glass
- surface roughness
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000004065 semiconductor Substances 0.000 title description 9
- 238000005530 etching Methods 0.000 claims description 72
- 230000003746 surface roughness Effects 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 13
- 238000003754 machining Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 24
- 230000004580 weight loss Effects 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005498 polishing Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000003672 processing method Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Surface Treatment Of Glass (AREA)
Description
最小エッチング深さmin=70+60×ln (Ra,0[単位 μm])を満足し、好ましくは以下の寸法基準:
最小エッチング深さmin=75+60×ln (Ra,0[単位 μm])を満足する、
処理方法が、特に効果的であることが明らかにされている。
a)0.6μmと8μmの間の範囲内の平均の表面粗度Ra,1と、
b)室温において10%のフッ化水素酸内でエッチングする場合に、0.4μg/(mm2×min)より少ない、実質的に時間的に一定の重量減少と、によって特徴づけられる表面を有することによって、解決される。
最小エッチング深さmin[単位 μm]=70+60×ln (Ra,0[単位 μm])
[比較例1]
Claims (6)
- 未加工材料の表面を機械的に加工することによって初期の平均的な表面粗度Ra,0を発生し、かつこのように加工された構成部品表面がエッチング処理を受けることによって、半導体製造において使用するための石英ガラスからなる構成部品を形成する方法において、
機械的な加工によって、少なくとも0.3μmかつ最大で1.6μmの初期の平均的な表面粗度Ra,0を設定し、かつエッチング処理の強度と期間を、15μmと120μmの間の範囲内でエッチング深さがRa,0に従って定められた最小エッチング深さminよりも大きいように、設定することを特徴とする石英ガラスからなる構成部品を形成する方法。 - 0.4μmまたはそれより大きい初期の平均の表面粗度Ra,0において、以下の寸法基準の最小エッチング深さmin:
最小エッチング深さmin[単位 μm]=70+60×ln(Ra,0[単位 μm])
を満足することを特徴とする請求項1に記載の方法。 - 以下の寸法基準の最小エッチング深さmin:
最小エッチング深さmin[単位 μm]=75+60×ln(Ra,0[単位 μm])
を満足することを特徴とする請求項2に記載の方法。 - 最小エッチング深さminが、20μmと100μmの間の範囲内にあることを特徴とする請求項1〜3のいずれか1項に記載の方法。
- エッチング処理の強度と期間を、エッチング深さが最小エッチング深さminよりも最大で20μm大きいように設定することを特徴とする請求項1〜4のいずれか1項に記載の方法。
- 表面の機械的な加工によって、0.8μmの初期の平均的な表面粗度Ra,0を発生することを特徴とする請求項1〜5のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005005196.0 | 2005-02-03 | ||
DE102005005196A DE102005005196B4 (de) | 2005-02-03 | 2005-02-03 | Verfahren zur Herstellung eines Bauteils aus Quarzglas für den Einsatz in der Halbleiterfertigung und nach dem Verfahren erhaltenes Bauteil |
PCT/EP2006/000381 WO2006081940A1 (de) | 2005-02-03 | 2006-01-18 | Verfahren zur herstellung eines bauteils aus quarzglas für den einsatz in der halbleiterfertigung und nach dem verfahren erhaltenes bauteil |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008528432A JP2008528432A (ja) | 2008-07-31 |
JP2008528432A5 JP2008528432A5 (ja) | 2013-05-16 |
JP5274022B2 true JP5274022B2 (ja) | 2013-08-28 |
Family
ID=36480954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007553493A Active JP5274022B2 (ja) | 2005-02-03 | 2006-01-18 | 半導体製造において使用するための石英ガラスの構成部品を形成する方法およびその方法に従って得られた構成部品 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20080193715A1 (ja) |
EP (1) | EP1843984B1 (ja) |
JP (1) | JP5274022B2 (ja) |
KR (1) | KR101345563B1 (ja) |
CN (1) | CN101115691B (ja) |
DE (1) | DE102005005196B4 (ja) |
IL (1) | IL184622A (ja) |
WO (1) | WO2006081940A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7193103B2 (ja) | 2019-12-26 | 2022-12-20 | 株式会社クボタ | 刈刃ホルダ及び草刈機 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005017739B4 (de) | 2005-04-15 | 2009-11-05 | Heraeus Quarzglas Gmbh & Co. Kg | Halter aus Quarzglas für die Prozessierung von Halbleiterwafern und Verfahren zur Herstellung des Halters |
CN103247551A (zh) * | 2012-02-01 | 2013-08-14 | 上海科秉电子科技有限公司 | 一种用于半导体制程中钟罩零件的粗糙度再生方法 |
KR20170036985A (ko) | 2015-09-25 | 2017-04-04 | 한국세라믹기술원 | 석영 유리의 표면 엠보싱화 방법 |
EP3390292B1 (de) | 2015-12-18 | 2023-03-15 | Heraeus Quarzglas GmbH & Co. KG | Herstellung einer synthetischen quarzglaskörnung |
EP3390302B1 (de) | 2015-12-18 | 2023-09-20 | Heraeus Quarzglas GmbH & Co. KG | Herstellung eines quarzglaskörpers in einem schmelztiegel aus refraktärmetall |
KR20180095618A (ko) | 2015-12-18 | 2018-08-27 | 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지 | 다중-챔버 가열로에서 실리카 유리체의 제조 |
TWI808933B (zh) | 2015-12-18 | 2023-07-21 | 德商何瑞斯廓格拉斯公司 | 石英玻璃體、二氧化矽顆粒、光導、施照體、及成型體及其製備方法 |
WO2017103160A1 (de) | 2015-12-18 | 2017-06-22 | Heraeus Quarzglas Gmbh & Co. Kg | Herstellung von quarzglaskörpern aus siliziumdioxidgranulat |
EP3390290B1 (de) | 2015-12-18 | 2023-03-15 | Heraeus Quarzglas GmbH & Co. KG | Herstellung eines opaken quarzglaskörpers |
US11492282B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies with dew point monitoring in the melting oven |
KR20180095879A (ko) | 2015-12-18 | 2018-08-28 | 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지 | 상승된 온도에서 탄소-도핑된 실리카 과립을 처리하여 실리카 과립의 알칼리 토금속 함량의 감소 |
KR20180095619A (ko) | 2015-12-18 | 2018-08-27 | 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지 | 실리카 유리 제조 동안 규소 함량의 증가 |
JP2019502633A (ja) | 2015-12-18 | 2019-01-31 | ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー | 均質な石英ガラス製のガラス繊維および母材 |
KR102275790B1 (ko) * | 2019-11-15 | 2021-07-09 | 세메스 주식회사 | 석영 부재의 표면 처리 방법 및 석영 부재 |
WO2022270576A1 (ja) * | 2021-06-25 | 2022-12-29 | 信越石英株式会社 | 石英ガラス治具の製造方法及び石英ガラス治具 |
KR20230036331A (ko) | 2021-09-07 | 2023-03-14 | 임재영 | 나노 보호코팅층을 가지는 반도체 공정용 글래스 |
CN115008027B (zh) * | 2022-06-16 | 2023-04-28 | 江苏富乐华半导体科技股份有限公司 | 一种覆铜陶瓷基板产品的追溯方式 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19713014C2 (de) * | 1997-03-27 | 1999-01-21 | Heraeus Quarzglas | Bauteil aus Quarzglas für die Verwendung bei der Halbleiterherstellung |
US6368410B1 (en) * | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
JP4294176B2 (ja) * | 1999-09-13 | 2009-07-08 | 株式会社山形信越石英 | 表面が砂目加工された石英物品の洗浄方法 |
DE10018857C1 (de) * | 2000-04-14 | 2001-11-29 | Heraeus Quarzglas | Vorrichtung zur Herstellung eines Quarzglaskörpers |
JP2002047034A (ja) * | 2000-07-31 | 2002-02-12 | Shinetsu Quartz Prod Co Ltd | プラズマを利用したプロセス装置用の石英ガラス治具 |
WO2002027771A1 (fr) * | 2000-09-28 | 2002-04-04 | Shin-Etsu Quartz Products Co., Ltd. | Support de verre de silice destine a la production de semi-conducteurs et procede de production de ce support |
US7250114B2 (en) * | 2003-05-30 | 2007-07-31 | Lam Research Corporation | Methods of finishing quartz glass surfaces and components made by the methods |
US7045072B2 (en) * | 2003-07-24 | 2006-05-16 | Tan Samantha S H | Cleaning process and apparatus for silicate materials |
-
2005
- 2005-02-03 DE DE102005005196A patent/DE102005005196B4/de not_active Expired - Fee Related
-
2006
- 2006-01-18 US US11/883,617 patent/US20080193715A1/en not_active Abandoned
- 2006-01-18 EP EP06706270.3A patent/EP1843984B1/de not_active Expired - Fee Related
- 2006-01-18 WO PCT/EP2006/000381 patent/WO2006081940A1/de active Application Filing
- 2006-01-18 KR KR1020077017871A patent/KR101345563B1/ko active IP Right Grant
- 2006-01-18 JP JP2007553493A patent/JP5274022B2/ja active Active
- 2006-01-18 CN CN2006800039912A patent/CN101115691B/zh active Active
-
2007
- 2007-07-15 IL IL184622A patent/IL184622A/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7193103B2 (ja) | 2019-12-26 | 2022-12-20 | 株式会社クボタ | 刈刃ホルダ及び草刈機 |
Also Published As
Publication number | Publication date |
---|---|
CN101115691B (zh) | 2012-06-13 |
EP1843984B1 (de) | 2017-06-14 |
IL184622A (en) | 2012-01-31 |
IL184622A0 (en) | 2007-12-03 |
KR101345563B1 (ko) | 2014-01-02 |
DE102005005196A1 (de) | 2006-08-17 |
EP1843984A1 (de) | 2007-10-17 |
DE102005005196B4 (de) | 2009-04-23 |
US20080193715A1 (en) | 2008-08-14 |
KR20070102700A (ko) | 2007-10-19 |
WO2006081940A1 (de) | 2006-08-10 |
JP2008528432A (ja) | 2008-07-31 |
CN101115691A (zh) | 2008-01-30 |
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