JP5274009B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5274009B2 JP5274009B2 JP2007511282A JP2007511282A JP5274009B2 JP 5274009 B2 JP5274009 B2 JP 5274009B2 JP 2007511282 A JP2007511282 A JP 2007511282A JP 2007511282 A JP2007511282 A JP 2007511282A JP 5274009 B2 JP5274009 B2 JP 5274009B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 20
- 238000001228 spectrum Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 19
- 238000000295 emission spectrum Methods 0.000 description 8
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- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 239000004593 Epoxy Substances 0.000 description 1
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- 239000012778 molding material Substances 0.000 description 1
- 230000003578 releasing effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63C—SKATES; SKIS; ROLLER SKATES; DESIGN OR LAYOUT OF COURTS, RINKS OR THE LIKE
- A63C19/00—Design or layout of playing courts, rinks, bowling greens or areas for water-skiing; Covers therefor
- A63C19/06—Apparatus for setting-out or dividing courts
- A63C19/065—Line markings, e.g. tapes; Methods therefor
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63C—SKATES; SKIS; ROLLER SKATES; DESIGN OR LAYOUT OF COURTS, RINKS OR THE LIKE
- A63C19/00—Design or layout of playing courts, rinks, bowling greens or areas for water-skiing; Covers therefor
- A63C19/06—Apparatus for setting-out or dividing courts
- A63C19/065—Line markings, e.g. tapes; Methods therefor
- A63C2019/067—Machines for marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Description
図6から明らかなように、トップ型のパッケージの発光装置30は、ディスプレイのバックライトなどに適用される発光装置であり、前述の第1及び第2の実施形態とほとんど同一の構造を有し、単に基板上にリフレクター31が取り付けられている点で異なる。リフレクター31は、発光ダイオード6から発せられる光を所望の方向に反射する役割を果たす。
図7から明らかなように、サイド型パッケージの発光装置40は、図6のトップ型のパッケージとほとんど同じ構造を有し、単に極めて薄い長方形の外観をなす点で異なる。詳しくは、図6と結び付けて行われた上述の記載を参照されたい。
本実施形態によるランプ型のパッケージの発光装置50は、一対のリード電極51、52を備え、一側のリード電極51の上端部にダイオードホルダー53が形成されている。ダイオードホルダー53はカップ状を有し、その内部に2個の発光ダイオード(6、7)または3個の発光ダイオード(16、17、18)が実装される。各発光ダイオード(6、7)、または発光ダイオード(16、17、18)は、前述の実施の形態と同様に、互いに異なる発光ピーク波長を有する。実装された各発光ダイオード(6、7)、または発光ダイオード(16、17、18)の電極は、他側の電極リード52と導電性ワイヤー2により接続されている。
図9から明らかなように、高出力用パッケージ型の発光装置60は、複数の個別のヒートシンク61、62にそれぞれ発光ダイオード(6、7)、または発光ダイオード(16、17、18)が実装されており、発光ダイオード(6、7)の上面及び側面に波長変換手段3が配置されたハウジング63を備える。外部電源が供給される複数のリードフレーム64がハウジング63の外部に突出されている。
本実施形態の高出力用パッケージ型の発光装置70においては、ハウジング73内に単一のヒートシンク71が収納されて部分的に外部に露出され、一対のリードフレーム74が外部に突出されている。ヒートシンク71の上面に発光ダイオード6、7または16、17、18が実装され、各リードフレーム74と導電性ワイヤー(図示せず)を介して接続されている。波長変換手段3または13が発光ダイオード6の上面及び側面に配置されていることはいうまでもない。
2 導電性ワイヤー
3、13 波長変換手段
5 電極パターン
6、7、16、17、18 発光ダイオード
9 接着剤
10 モールド(部)
11、20、30、40、50、60、70 発光装置
31 リフレクター
51、52 リード電極
61、62、71 ヒートシンク
Claims (17)
- 紫外線の波長領域の1次光を発光させる発光ダイオードと青色の波長領域の1次光を発光させる発光ダイオードとを備える少なくとも2つ以上の発光ダイオードと、
前記発光ダイオードから発せられた紫外線の波長領域及び青色の波長領域の各1次光によって励起され且つ各前記1次光を可視光線スペクトル領域内の2次光に波長変換する手段とを備え、
前記少なくとも2つ以上の発光ダイオードは、発光ピーク波長が360nm〜420nmである第1の発光ダイオードと、
発光ピーク波長が400nm〜450nmである第2の発光ダイオードと、
発光ピーク波長が430nm〜500nmである第3の発光ダイオードとを含み、
前記波長変換する手段は蛍光体からなり、前記蛍光体を均一に分布させた硬化性モールドが前記紫外線の波長領域の1次光を発光させる発光ダイオードの上部及び前記青色の波長領域の1次光を発光させる発光ダイオードの上部に設けられてなることを特徴とする発光装置。 - 前記1次光を発光させる発光ダイオード及び前記波長変換する手段は、単一のパッケージ内に搭載されていることを特徴とする請求項1に記載の発光装置。
- 前記波長変換する手段は、前記発光ダイオードのそれぞれの周囲に配置され、発光ピーク波長が互いに異なる2種以上の蛍光体が混合されたものからなることを特徴とする請求項1に記載の発光装置。
- 前記波長変換する手段は、前記発光ダイオードの側面及び下面のうち少なくともいずれか一側に配置されていることを特徴とする請求項1に記載の発光装置。
- 前記波長変換する手段は、発光ピーク波長が440nm〜500nmである蛍光体、発光ピーク波長が500nm〜590nmである蛍光体、及び発光ピーク波長が580nm〜700nmである蛍光体の内から選択される少なくともいずれか1つを含むことを特徴とする請求項1または3に記載の発光装置。
- 前記の蛍光体は、前記該当スペクトル領域内においてそれぞれ異なる発光ピーク波長を有する2種以上の蛍光体を含むことを特徴とする請求項5に記載の発光装置。
- 前記の蛍光体は、化学式が(Ba,Sr,Ca)xSiO4:Eu及び(Ba,Sr,Ca)xSiO4:Mnのオルトシリケート系の蛍光体のうち、少なくとも1種から成ることを特徴とする請求項5に記載の発光装置。
- 前記単一のパッケージは、基板と、該基板上に実装される前記少なくとも2つ以上の発光ダイオードと、前記発光ダイオードの周縁部に配置される波長変換する手段とを備えるチップパッケージとして形成されることを特徴とする請求項2に記載の発光装置。
- 前記単一のパッケージは、リフレクターが形成された基板と、該基板上に実装される前記少なくとも2つ以上の発光ダイオードと、前記発光ダイオードの周縁部に配置される前記波長変換する手段とを備えるトップ型のパッケージとして形成されることを特徴とする請求項2に記載の発光装置。
- 前記基板は、前記少なくとも2つ以上の発光ダイオードから発せられる熱を放出する金属性材質のもので形成されることを特徴とする請求項8に記載の発光装置。
- 前記金属性材質のもので形成された基板に取り付けられる放熱板をさらに備えることを特徴とする請求項10に記載の発光装置。
- 前記基板上に前記発光ダイオード及び前記波長変換する手段を封止するモールド部をさらに備えることを特徴とする請求項8に記載の発光装置。
- 前記モールド部に前記波長変換する手段が均一に分布されていることを特徴とする請求項12に記載の発光装置。
- 前記単一のパッケージは、一対の電極リードと、該一対の電極リードのうち片側に実装された前記少なくとも2つ以上の発光ダイオードと、前記少なくとも2つ以上の発光ダイオードの周縁部に配置される波長変換する手段と、前記少なくとも2つ以上の発光ダイオードと前記波長変換する手段を封止するモールド部とを備えるランプパッケージとして形成されることを特徴とする請求項2に記載の発光装置。
- 前記単一のパッケージは、前記少なくとも2つ以上の発光ダイオードと、前記少なくとも2つ以上の発光ダイオードの周縁部に配置される波長変換する手段と、前記少なくとも2つ以上の発光ダイオードから発せられる熱を放出するヒートシンクとを備える高出力パッケージとして形成されることを特徴とする請求項2に記載の発光装置。
- 前記ヒートシンクから熱を放出可能に取り付けられる放熱板をさらに備えることを特徴とする請求項15に記載の発光装置。
- 前記各発光ダイオードは、シリコンカーバイドまたはサファイアで形成された基板上に窒化物エピタキシャル層を形成してなる構造を備えることを特徴とする請求項1に記載の発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040032017A KR100655894B1 (ko) | 2004-05-06 | 2004-05-06 | 색온도 및 연색성이 우수한 파장변환 발광장치 |
KR10-2004-0032017 | 2004-05-06 | ||
PCT/KR2005/001287 WO2005109532A1 (en) | 2004-05-06 | 2005-05-03 | Light emitting device |
Publications (2)
Publication Number | Publication Date |
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JP2007536729A JP2007536729A (ja) | 2007-12-13 |
JP5274009B2 true JP5274009B2 (ja) | 2013-08-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007511282A Expired - Fee Related JP5274009B2 (ja) | 2004-05-06 | 2005-05-03 | 発光装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8071988B2 (ja) |
EP (1) | EP1766692B1 (ja) |
JP (1) | JP5274009B2 (ja) |
KR (1) | KR100655894B1 (ja) |
CN (1) | CN1981388B (ja) |
WO (1) | WO2005109532A1 (ja) |
Families Citing this family (305)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
KR100655894B1 (ko) | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | 색온도 및 연색성이 우수한 파장변환 발광장치 |
KR100658700B1 (ko) | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Rgb 발광소자와 형광체를 조합한 발광장치 |
US8318044B2 (en) * | 2004-06-10 | 2012-11-27 | Seoul Semiconductor Co., Ltd. | Light emitting device |
KR100665299B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광물질 |
KR100665298B1 (ko) | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광장치 |
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2004
- 2004-05-06 KR KR1020040032017A patent/KR100655894B1/ko active IP Right Grant
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- 2005-05-03 WO PCT/KR2005/001287 patent/WO2005109532A1/en active Application Filing
- 2005-05-03 CN CN2005800168444A patent/CN1981388B/zh active Active
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CN1981388A (zh) | 2007-06-13 |
CN1981388B (zh) | 2010-09-15 |
EP1766692A4 (en) | 2011-08-24 |
KR100655894B1 (ko) | 2006-12-08 |
KR20050106945A (ko) | 2005-11-11 |
EP1766692A1 (en) | 2007-03-28 |
EP1766692B1 (en) | 2016-04-06 |
US20090262515A1 (en) | 2009-10-22 |
JP2007536729A (ja) | 2007-12-13 |
WO2005109532A1 (en) | 2005-11-17 |
US8071988B2 (en) | 2011-12-06 |
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