JP5270392B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP5270392B2
JP5270392B2 JP2009020453A JP2009020453A JP5270392B2 JP 5270392 B2 JP5270392 B2 JP 5270392B2 JP 2009020453 A JP2009020453 A JP 2009020453A JP 2009020453 A JP2009020453 A JP 2009020453A JP 5270392 B2 JP5270392 B2 JP 5270392B2
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Japan
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register
charge
output
amplifier
corner
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JP2009020453A
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English (en)
Japanese (ja)
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JP2010177564A5 (enExample
JP2010177564A (ja
Inventor
久則 鈴木
康人 米田
慎一郎 ▲高▼木
堅太郎 前田
雅治 村松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
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Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to JP2009020453A priority Critical patent/JP5270392B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to PCT/JP2010/050778 priority patent/WO2010087279A1/ja
Priority to KR1020107019369A priority patent/KR101066341B1/ko
Priority to CN201080001167XA priority patent/CN101960597B/zh
Priority to US12/920,114 priority patent/US8552352B2/en
Priority to EP10735748.5A priority patent/EP2249390B1/en
Priority to TW099102710A priority patent/TWI499294B/zh
Publication of JP2010177564A publication Critical patent/JP2010177564A/ja
Publication of JP2010177564A5 publication Critical patent/JP2010177564A5/ja
Application granted granted Critical
Publication of JP5270392B2 publication Critical patent/JP5270392B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009020453A 2009-01-30 2009-01-30 固体撮像装置 Active JP5270392B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009020453A JP5270392B2 (ja) 2009-01-30 2009-01-30 固体撮像装置
KR1020107019369A KR101066341B1 (ko) 2009-01-30 2010-01-22 고체 촬상 장치
CN201080001167XA CN101960597B (zh) 2009-01-30 2010-01-22 固体摄像装置
US12/920,114 US8552352B2 (en) 2009-01-30 2010-01-22 Solid-state imaging device including corner register
PCT/JP2010/050778 WO2010087279A1 (ja) 2009-01-30 2010-01-22 固体撮像装置
EP10735748.5A EP2249390B1 (en) 2009-01-30 2010-01-22 Solid-state imaging device
TW099102710A TWI499294B (zh) 2009-01-30 2010-01-29 Solid state camera device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009020453A JP5270392B2 (ja) 2009-01-30 2009-01-30 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2010177564A JP2010177564A (ja) 2010-08-12
JP2010177564A5 JP2010177564A5 (enExample) 2011-12-08
JP5270392B2 true JP5270392B2 (ja) 2013-08-21

Family

ID=42395541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009020453A Active JP5270392B2 (ja) 2009-01-30 2009-01-30 固体撮像装置

Country Status (7)

Country Link
US (1) US8552352B2 (enExample)
EP (1) EP2249390B1 (enExample)
JP (1) JP5270392B2 (enExample)
KR (1) KR101066341B1 (enExample)
CN (1) CN101960597B (enExample)
TW (1) TWI499294B (enExample)
WO (1) WO2010087279A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5330001B2 (ja) * 2009-01-30 2013-10-30 浜松ホトニクス株式会社 固体撮像装置
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
US8411189B2 (en) * 2011-05-25 2013-04-02 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
CN110335882B (zh) * 2019-06-25 2021-05-07 中国电子科技集团公司第四十四研究所 一种可提高帧转移ccd响应度像元结构
US20230026004A1 (en) * 2019-12-26 2023-01-26 Hamamatsu Photonics K.K. Ranging image sensor and method for manufacturing same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0526993B1 (en) 1991-07-11 2000-09-27 Texas Instruments Incorporated Charge multiplying detector (CMD) suitable for small pixel CCD image sensors
JPH0530432A (ja) * 1991-07-19 1993-02-05 Sharp Corp 固体撮像装置
GB2323471B (en) 1997-03-22 2002-04-17 Eev Ltd CCd imagers
US6278142B1 (en) 1999-08-30 2001-08-21 Isetex, Inc Semiconductor image intensifier
JP5026641B2 (ja) 2000-04-28 2012-09-12 テキサス インスツルメンツ インコーポレイテッド 固体撮像センサ
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP2002218327A (ja) * 2001-01-15 2002-08-02 Sony Corp 固体撮像装置およびカメラシステム
US7420605B2 (en) 2001-01-18 2008-09-02 E2V Technologies (Uk) Limited Solid state imager arrangements
JP2002325720A (ja) * 2001-04-27 2002-11-12 Fuji Photo Film Co Ltd 内視鏡装置
US7190400B2 (en) 2001-06-04 2007-03-13 Texas Instruments Incorporated Charge multiplier with logarithmic dynamic range compression implemented in charge domain
JP2003158679A (ja) * 2001-08-20 2003-05-30 Fuji Photo Film Co Ltd 電荷増倍型固体電子撮像装置およびその制御方法
US7184085B2 (en) 2001-08-20 2007-02-27 Fuji Photo Film Co., Ltd. Charge multiplying solid-state electronic image sensing device and method of controlling same
US6784412B2 (en) * 2001-08-29 2004-08-31 Texas Instruments Incorporated Compact image sensor layout with charge multiplying register
US6917041B2 (en) 2002-03-18 2005-07-12 Massachusetts Institute Of Technology Event-driven charge-coupled device design and applications therefor
JP3689866B2 (ja) 2002-05-30 2005-08-31 日本テキサス・インスツルメンツ株式会社 Ｃｍｄ及びｃｍｄ搭載ｃｃｄ装置
US20050029553A1 (en) 2003-08-04 2005-02-10 Jaroslav Hynecek Clocked barrier virtual phase charge coupled device image sensor
GB2413007A (en) 2004-04-07 2005-10-12 E2V Tech Uk Ltd Multiplication register for amplifying signal charge
US7522205B2 (en) * 2004-09-10 2009-04-21 Eastman Kodak Company Image sensor with charge multiplication
JP4772337B2 (ja) * 2005-02-17 2011-09-14 浜松ホトニクス株式会社 撮像装置、撮像システム、及び共焦点顕微鏡
GB2424758A (en) 2005-03-31 2006-10-04 E2V Tech CCD device
GB2431538B (en) 2005-10-24 2010-12-22 E2V Tech CCD device

Also Published As

Publication number Publication date
TWI499294B (zh) 2015-09-01
CN101960597B (zh) 2012-07-04
EP2249390A4 (en) 2012-03-07
CN101960597A (zh) 2011-01-26
US20110024606A1 (en) 2011-02-03
EP2249390A1 (en) 2010-11-10
WO2010087279A1 (ja) 2010-08-05
KR20100107067A (ko) 2010-10-04
TW201119373A (en) 2011-06-01
JP2010177564A (ja) 2010-08-12
KR101066341B1 (ko) 2011-09-20
US8552352B2 (en) 2013-10-08
EP2249390B1 (en) 2013-10-09

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