CN101960597B - 固体摄像装置 - Google Patents

固体摄像装置 Download PDF

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Publication number
CN101960597B
CN101960597B CN201080001167XA CN201080001167A CN101960597B CN 101960597 B CN101960597 B CN 101960597B CN 201080001167X A CN201080001167X A CN 201080001167XA CN 201080001167 A CN201080001167 A CN 201080001167A CN 101960597 B CN101960597 B CN 101960597B
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China
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register
charge
output
amplifier
corner
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CN201080001167XA
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Chinese (zh)
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CN101960597A (zh
Inventor
铃木久则
米田康人
高木慎一郎
前田坚太郎
村松雅治
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201080001167XA 2009-01-30 2010-01-22 固体摄像装置 Active CN101960597B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-020453 2009-01-30
JP2009020453A JP5270392B2 (ja) 2009-01-30 2009-01-30 固体撮像装置
PCT/JP2010/050778 WO2010087279A1 (ja) 2009-01-30 2010-01-22 固体撮像装置

Publications (2)

Publication Number Publication Date
CN101960597A CN101960597A (zh) 2011-01-26
CN101960597B true CN101960597B (zh) 2012-07-04

Family

ID=42395541

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080001167XA Active CN101960597B (zh) 2009-01-30 2010-01-22 固体摄像装置

Country Status (7)

Country Link
US (1) US8552352B2 (enExample)
EP (1) EP2249390B1 (enExample)
JP (1) JP5270392B2 (enExample)
KR (1) KR101066341B1 (enExample)
CN (1) CN101960597B (enExample)
TW (1) TWI499294B (enExample)
WO (1) WO2010087279A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5330001B2 (ja) * 2009-01-30 2013-10-30 浜松ホトニクス株式会社 固体撮像装置
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
US8411189B2 (en) * 2011-05-25 2013-04-02 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
CN110335882B (zh) * 2019-06-25 2021-05-07 中国电子科技集团公司第四十四研究所 一种可提高帧转移ccd响应度像元结构
DE112020006344T5 (de) * 2019-12-26 2022-10-27 Hamamatsu Photonics K.K. Range-Imaging-Sensor und Verfahren zur Herstellung dieses Sensors

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100298039B1 (ko) 1991-07-11 2001-10-24 윌리엄 비. 켐플러 전하증배장치및그제조방법
JPH0530432A (ja) * 1991-07-19 1993-02-05 Sharp Corp 固体撮像装置
GB2323471B (en) * 1997-03-22 2002-04-17 Eev Ltd CCd imagers
US6278142B1 (en) 1999-08-30 2001-08-21 Isetex, Inc Semiconductor image intensifier
EP1152469B1 (en) 2000-04-28 2015-12-02 Texas Instruments Japan Limited High dynamic range charge readout system
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP2002218327A (ja) * 2001-01-15 2002-08-02 Sony Corp 固体撮像装置およびカメラシステム
US7420605B2 (en) * 2001-01-18 2008-09-02 E2V Technologies (Uk) Limited Solid state imager arrangements
JP2002325720A (ja) * 2001-04-27 2002-11-12 Fuji Photo Film Co Ltd 内視鏡装置
US7190400B2 (en) 2001-06-04 2007-03-13 Texas Instruments Incorporated Charge multiplier with logarithmic dynamic range compression implemented in charge domain
US7184085B2 (en) * 2001-08-20 2007-02-27 Fuji Photo Film Co., Ltd. Charge multiplying solid-state electronic image sensing device and method of controlling same
JP2003158679A (ja) * 2001-08-20 2003-05-30 Fuji Photo Film Co Ltd 電荷増倍型固体電子撮像装置およびその制御方法
US6784412B2 (en) * 2001-08-29 2004-08-31 Texas Instruments Incorporated Compact image sensor layout with charge multiplying register
US6917041B2 (en) * 2002-03-18 2005-07-12 Massachusetts Institute Of Technology Event-driven charge-coupled device design and applications therefor
JP3689866B2 (ja) 2002-05-30 2005-08-31 日本テキサス・インスツルメンツ株式会社 Ｃｍｄ及びｃｍｄ搭載ｃｃｄ装置
US20050029553A1 (en) 2003-08-04 2005-02-10 Jaroslav Hynecek Clocked barrier virtual phase charge coupled device image sensor
GB2413007A (en) 2004-04-07 2005-10-12 E2V Tech Uk Ltd Multiplication register for amplifying signal charge
US7522205B2 (en) * 2004-09-10 2009-04-21 Eastman Kodak Company Image sensor with charge multiplication
JP4772337B2 (ja) * 2005-02-17 2011-09-14 浜松ホトニクス株式会社 撮像装置、撮像システム、及び共焦点顕微鏡
GB2424758A (en) 2005-03-31 2006-10-04 E2V Tech CCD device
GB2431538B (en) 2005-10-24 2010-12-22 E2V Tech CCD device

Also Published As

Publication number Publication date
CN101960597A (zh) 2011-01-26
WO2010087279A1 (ja) 2010-08-05
US20110024606A1 (en) 2011-02-03
TW201119373A (en) 2011-06-01
EP2249390B1 (en) 2013-10-09
JP5270392B2 (ja) 2013-08-21
TWI499294B (zh) 2015-09-01
EP2249390A1 (en) 2010-11-10
US8552352B2 (en) 2013-10-08
EP2249390A4 (en) 2012-03-07
KR20100107067A (ko) 2010-10-04
KR101066341B1 (ko) 2011-09-20
JP2010177564A (ja) 2010-08-12

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