JP5264018B2 - 半導体基板の作製方法 - Google Patents

半導体基板の作製方法 Download PDF

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Publication number
JP5264018B2
JP5264018B2 JP2008103146A JP2008103146A JP5264018B2 JP 5264018 B2 JP5264018 B2 JP 5264018B2 JP 2008103146 A JP2008103146 A JP 2008103146A JP 2008103146 A JP2008103146 A JP 2008103146A JP 5264018 B2 JP5264018 B2 JP 5264018B2
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single crystal
substrate
semiconductor substrate
crystal semiconductor
layer
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JP2008103146A
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Japanese (ja)
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JP2009253240A (ja
JP2009253240A5 (enExample
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健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2008103146A 2008-04-11 2008-04-11 半導体基板の作製方法 Expired - Fee Related JP5264018B2 (ja)

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JP2008103146A JP5264018B2 (ja) 2008-04-11 2008-04-11 半導体基板の作製方法

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JP2008103146A JP5264018B2 (ja) 2008-04-11 2008-04-11 半導体基板の作製方法

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JP2009253240A JP2009253240A (ja) 2009-10-29
JP2009253240A5 JP2009253240A5 (enExample) 2011-03-31
JP5264018B2 true JP5264018B2 (ja) 2013-08-14

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6005364B2 (ja) * 2012-02-06 2016-10-12 ラピスセミコンダクタ株式会社 半導体装置の製造方法及び半導体装置
KR20150032845A (ko) * 2012-06-15 2015-03-30 스미또모 가가꾸 가부시키가이샤 복합 기판의 제조 방법 및 복합 기판
JP6254234B2 (ja) * 2016-09-07 2017-12-27 ラピスセミコンダクタ株式会社 半導体装置
JP2018032877A (ja) * 2017-11-29 2018-03-01 ラピスセミコンダクタ株式会社 半導体装置
JP2020077710A (ja) * 2018-11-06 2020-05-21 信越半導体株式会社 発光素子用半導体基板の製造方法及び発光素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751261B2 (ja) * 1988-11-16 1998-05-18 ソニー株式会社 半導体基体の張り合わせ方法
JP3943782B2 (ja) * 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
JP4289837B2 (ja) * 2002-07-15 2009-07-01 アプライド マテリアルズ インコーポレイテッド イオン注入方法及びｓｏｉウエハの製造方法
JP4624131B2 (ja) * 2005-02-22 2011-02-02 三洋電機株式会社 窒化物系半導体素子の製造方法

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