JP2009253240A5 - - Google Patents

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Publication number
JP2009253240A5
JP2009253240A5 JP2008103146A JP2008103146A JP2009253240A5 JP 2009253240 A5 JP2009253240 A5 JP 2009253240A5 JP 2008103146 A JP2008103146 A JP 2008103146A JP 2008103146 A JP2008103146 A JP 2008103146A JP 2009253240 A5 JP2009253240 A5 JP 2009253240A5
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JP
Japan
Prior art keywords
substrate
single crystal
crystal semiconductor
protective layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008103146A
Other languages
English (en)
Japanese (ja)
Other versions
JP5264018B2 (ja
JP2009253240A (ja
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Publication date
Application filed filed Critical
Priority to JP2008103146A priority Critical patent/JP5264018B2/ja
Priority claimed from JP2008103146A external-priority patent/JP5264018B2/ja
Publication of JP2009253240A publication Critical patent/JP2009253240A/ja
Publication of JP2009253240A5 publication Critical patent/JP2009253240A5/ja
Application granted granted Critical
Publication of JP5264018B2 publication Critical patent/JP5264018B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008103146A 2008-04-11 2008-04-11 半導体基板の作製方法 Expired - Fee Related JP5264018B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008103146A JP5264018B2 (ja) 2008-04-11 2008-04-11 半導体基板の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008103146A JP5264018B2 (ja) 2008-04-11 2008-04-11 半導体基板の作製方法

Publications (3)

Publication Number Publication Date
JP2009253240A JP2009253240A (ja) 2009-10-29
JP2009253240A5 true JP2009253240A5 (enExample) 2011-03-31
JP5264018B2 JP5264018B2 (ja) 2013-08-14

Family

ID=41313603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008103146A Expired - Fee Related JP5264018B2 (ja) 2008-04-11 2008-04-11 半導体基板の作製方法

Country Status (1)

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JP (1) JP5264018B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6005364B2 (ja) * 2012-02-06 2016-10-12 ラピスセミコンダクタ株式会社 半導体装置の製造方法及び半導体装置
KR20150032845A (ko) * 2012-06-15 2015-03-30 스미또모 가가꾸 가부시키가이샤 복합 기판의 제조 방법 및 복합 기판
JP6254234B2 (ja) * 2016-09-07 2017-12-27 ラピスセミコンダクタ株式会社 半導体装置
JP2018032877A (ja) * 2017-11-29 2018-03-01 ラピスセミコンダクタ株式会社 半導体装置
JP2020077710A (ja) * 2018-11-06 2020-05-21 信越半導体株式会社 発光素子用半導体基板の製造方法及び発光素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751261B2 (ja) * 1988-11-16 1998-05-18 ソニー株式会社 半導体基体の張り合わせ方法
JP3943782B2 (ja) * 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
JP4289837B2 (ja) * 2002-07-15 2009-07-01 アプライド マテリアルズ インコーポレイテッド イオン注入方法及びｓｏｉウエハの製造方法
JP4624131B2 (ja) * 2005-02-22 2011-02-02 三洋電機株式会社 窒化物系半導体素子の製造方法

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