JP5261194B2 - 高い熱伝導率を有する半導体ウエハ - Google Patents
高い熱伝導率を有する半導体ウエハ Download PDFInfo
- Publication number
- JP5261194B2 JP5261194B2 JP2008553453A JP2008553453A JP5261194B2 JP 5261194 B2 JP5261194 B2 JP 5261194B2 JP 2008553453 A JP2008553453 A JP 2008553453A JP 2008553453 A JP2008553453 A JP 2008553453A JP 5261194 B2 JP5261194 B2 JP 5261194B2
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- doped
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- 239000004065 semiconductor Substances 0.000 title claims description 82
- 239000000758 substrate Substances 0.000 claims description 127
- 239000000969 carrier Substances 0.000 claims description 95
- 239000010410 layer Substances 0.000 claims description 94
- 239000011241 protective layer Substances 0.000 claims description 94
- 239000002019 doping agent Substances 0.000 claims description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 66
- 229910052710 silicon Inorganic materials 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 50
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 86
- 239000000463 material Substances 0.000 description 26
- 238000005286 illumination Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 241000282461 Canis lupus Species 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001978 electrochemical passivation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- -1 interconnects Substances 0.000 description 1
- QLNWXBAGRTUKKI-UHFFFAOYSA-N metacetamol Chemical compound CC(=O)NC1=CC=CC(O)=C1 QLNWXBAGRTUKKI-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/148—Shapes of potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76364306P | 2006-01-31 | 2006-01-31 | |
| US60/763,643 | 2006-01-31 | ||
| PCT/US2007/061128 WO2007090055A1 (en) | 2006-01-31 | 2007-01-26 | Semiconductor wafer with high thermal conductivity |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009525622A JP2009525622A (ja) | 2009-07-09 |
| JP2009525622A5 JP2009525622A5 (enExample) | 2010-11-11 |
| JP5261194B2 true JP5261194B2 (ja) | 2013-08-14 |
Family
ID=38121741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008553453A Active JP5261194B2 (ja) | 2006-01-31 | 2007-01-26 | 高い熱伝導率を有する半導体ウエハ |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US20070176238A1 (enExample) |
| EP (3) | EP2637207A1 (enExample) |
| JP (1) | JP5261194B2 (enExample) |
| KR (2) | KR20080098632A (enExample) |
| CN (1) | CN101410977A (enExample) |
| MY (1) | MY153160A (enExample) |
| TW (1) | TWI429793B (enExample) |
| WO (1) | WO2007090055A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090050939A1 (en) * | 2007-07-17 | 2009-02-26 | Briere Michael A | Iii-nitride device |
| KR20100077363A (ko) * | 2008-12-29 | 2010-07-08 | 주식회사 동부하이텍 | 씨모스 이미지 센서의 제조 방법 |
| US7985658B2 (en) * | 2009-06-08 | 2011-07-26 | Aptina Imaging Corporation | Method of forming substrate for use in imager devices |
| EP2555244A1 (en) * | 2011-08-03 | 2013-02-06 | austriamicrosystems AG | A method of producing a photodiode device and a photodiode device comprising an etch stop layer |
| US8748315B2 (en) * | 2012-02-15 | 2014-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Condition before TMAH improved device performance |
| US8956938B2 (en) * | 2012-05-16 | 2015-02-17 | International Business Machines Corporation | Epitaxial semiconductor resistor with semiconductor structures on same substrate |
| US9111898B2 (en) * | 2013-02-19 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company. Ltd. | Multiple layer substrate |
| CN104064688B (zh) * | 2014-07-11 | 2016-09-21 | 深圳市华星光电技术有限公司 | 具有存储电容的tft基板的制作方法及该tft基板 |
| CN112776003B (zh) * | 2019-11-07 | 2022-05-06 | 台达电子工业股份有限公司 | 散热装置及其适用的机器人 |
| CN112397570A (zh) * | 2020-11-17 | 2021-02-23 | 华虹半导体(无锡)有限公司 | 半导体基底结构及其制作方法 |
| EP4576168A1 (en) * | 2023-12-22 | 2025-06-25 | Nexperia B.V. | Suppression of auto-doping during epitaxial growth of epitaxy layer in a semiconductor device |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104090A (en) * | 1977-02-24 | 1978-08-01 | International Business Machines Corporation | Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation |
| US4247862B1 (en) * | 1977-08-26 | 1995-12-26 | Intel Corp | Ionzation resistant mos structure |
| US4506436A (en) * | 1981-12-21 | 1985-03-26 | International Business Machines Corporation | Method for increasing the radiation resistance of charge storage semiconductor devices |
| US4628591A (en) * | 1984-10-31 | 1986-12-16 | Texas Instruments Incorporated | Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon |
| JPH0793282B2 (ja) * | 1985-04-15 | 1995-10-09 | 株式会社日立製作所 | 半導体装置の製造方法 |
| FR2638892B1 (fr) * | 1988-11-09 | 1992-12-24 | Sgs Thomson Microelectronics | Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede |
| US5023200A (en) * | 1988-11-22 | 1991-06-11 | The United States Of America As Represented By The United States Department Of Energy | Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies |
| US5024723A (en) * | 1990-05-07 | 1991-06-18 | Goesele Ulrich M | Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning |
| JPH07187892A (ja) * | 1991-06-28 | 1995-07-25 | Internatl Business Mach Corp <Ibm> | シリコン及びその形成方法 |
| JPH06151303A (ja) * | 1992-11-11 | 1994-05-31 | Hitachi Ltd | 半導体ウエーハの形成方法 |
| US5880010A (en) * | 1994-07-12 | 1999-03-09 | Sun Microsystems, Inc. | Ultrathin electronics |
| US5668045A (en) * | 1994-11-30 | 1997-09-16 | Sibond, L.L.C. | Process for stripping outer edge of BESOI wafers |
| US5789309A (en) * | 1996-12-30 | 1998-08-04 | Memc Electronic Materials, Inc. | Method and system for monocrystalline epitaxial deposition |
| JPH10242153A (ja) * | 1997-02-26 | 1998-09-11 | Hitachi Ltd | 半導体ウエハ、半導体ウエハの製造方法、半導体装置および半導体装置の製造方法 |
| WO1998042010A1 (en) | 1997-03-17 | 1998-09-24 | Genus, Inc. | Bonded soi wafers using high energy implant |
| EP1148544A1 (de) | 2000-04-19 | 2001-10-24 | Infineon Technologies AG | Verfahren zum Dünnen eines Substrats |
| JP3785067B2 (ja) * | 2001-08-22 | 2006-06-14 | 株式会社東芝 | 半導体素子の製造方法 |
| JP4211696B2 (ja) | 2004-06-30 | 2009-01-21 | ソニー株式会社 | 固体撮像装置の製造方法 |
| DE102004039197B4 (de) * | 2004-08-12 | 2010-06-17 | Siltronic Ag | Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium |
-
2007
- 2007-01-26 JP JP2008553453A patent/JP5261194B2/ja active Active
- 2007-01-26 US US11/698,728 patent/US20070176238A1/en not_active Abandoned
- 2007-01-26 MY MYPI20082825A patent/MY153160A/en unknown
- 2007-01-26 EP EP13166824.6A patent/EP2637207A1/en not_active Withdrawn
- 2007-01-26 EP EP07762756A patent/EP1994562A1/en not_active Withdrawn
- 2007-01-26 KR KR1020087021333A patent/KR20080098632A/ko not_active Ceased
- 2007-01-26 KR KR1020127021211A patent/KR20120106893A/ko not_active Ceased
- 2007-01-26 CN CNA200780011360XA patent/CN101410977A/zh active Pending
- 2007-01-26 WO PCT/US2007/061128 patent/WO2007090055A1/en not_active Ceased
- 2007-01-26 EP EP13166827.9A patent/EP2637208A1/en not_active Withdrawn
- 2007-01-31 TW TW096103543A patent/TWI429793B/zh active
-
2009
- 2009-05-19 US US12/454,512 patent/US8080482B2/en active Active
-
2011
- 2011-09-02 US US13/199,587 patent/US8865601B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007090055A1 (en) | 2007-08-09 |
| JP2009525622A (ja) | 2009-07-09 |
| US20090233428A1 (en) | 2009-09-17 |
| US8080482B2 (en) | 2011-12-20 |
| TWI429793B (zh) | 2014-03-11 |
| EP2637208A1 (en) | 2013-09-11 |
| EP1994562A1 (en) | 2008-11-26 |
| US20070176238A1 (en) | 2007-08-02 |
| TW200801261A (en) | 2008-01-01 |
| US20110318912A1 (en) | 2011-12-29 |
| KR20120106893A (ko) | 2012-09-26 |
| US8865601B2 (en) | 2014-10-21 |
| EP2637207A1 (en) | 2013-09-11 |
| KR20080098632A (ko) | 2008-11-11 |
| MY153160A (en) | 2015-01-29 |
| CN101410977A (zh) | 2009-04-15 |
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