KR20080098632A - 고 열 전도율을 가진 반도체 웨이퍼 - Google Patents

고 열 전도율을 가진 반도체 웨이퍼 Download PDF

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Publication number
KR20080098632A
KR20080098632A KR1020087021333A KR20087021333A KR20080098632A KR 20080098632 A KR20080098632 A KR 20080098632A KR 1020087021333 A KR1020087021333 A KR 1020087021333A KR 20087021333 A KR20087021333 A KR 20087021333A KR 20080098632 A KR20080098632 A KR 20080098632A
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South Korea
Prior art keywords
carriers
substrate
protective layer
doped
concentration
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KR1020087021333A
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Korean (ko)
Inventor
마이클 알. 시크리스트
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엠이엠씨 일렉트로닉 머티리얼즈, 인크.
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Publication of KR20080098632A publication Critical patent/KR20080098632A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020087021333A 2006-01-31 2007-01-26 고 열 전도율을 가진 반도체 웨이퍼 Ceased KR20080098632A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US76364306P 2006-01-31 2006-01-31
US60/763,643 2006-01-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127021211A Division KR20120106893A (ko) 2006-01-31 2007-01-26 고 열 전도율을 가진 반도체 웨이퍼

Publications (1)

Publication Number Publication Date
KR20080098632A true KR20080098632A (ko) 2008-11-11

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KR1020087021333A Ceased KR20080098632A (ko) 2006-01-31 2007-01-26 고 열 전도율을 가진 반도체 웨이퍼
KR1020127021211A Ceased KR20120106893A (ko) 2006-01-31 2007-01-26 고 열 전도율을 가진 반도체 웨이퍼

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Country Status (8)

Country Link
US (3) US20070176238A1 (enExample)
EP (3) EP2637207A1 (enExample)
JP (1) JP5261194B2 (enExample)
KR (2) KR20080098632A (enExample)
CN (1) CN101410977A (enExample)
MY (1) MY153160A (enExample)
TW (1) TWI429793B (enExample)
WO (1) WO2007090055A1 (enExample)

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US20090050939A1 (en) * 2007-07-17 2009-02-26 Briere Michael A Iii-nitride device
KR20100077363A (ko) * 2008-12-29 2010-07-08 주식회사 동부하이텍 씨모스 이미지 센서의 제조 방법
US7985658B2 (en) * 2009-06-08 2011-07-26 Aptina Imaging Corporation Method of forming substrate for use in imager devices
EP2555244A1 (en) * 2011-08-03 2013-02-06 austriamicrosystems AG A method of producing a photodiode device and a photodiode device comprising an etch stop layer
US8748315B2 (en) * 2012-02-15 2014-06-10 Taiwan Semiconductor Manufacturing Co., Ltd. Condition before TMAH improved device performance
US8956938B2 (en) * 2012-05-16 2015-02-17 International Business Machines Corporation Epitaxial semiconductor resistor with semiconductor structures on same substrate
US9111898B2 (en) * 2013-02-19 2015-08-18 Taiwan Semiconductor Manufacturing Company. Ltd. Multiple layer substrate
CN104064688B (zh) * 2014-07-11 2016-09-21 深圳市华星光电技术有限公司 具有存储电容的tft基板的制作方法及该tft基板
CN112776003B (zh) * 2019-11-07 2022-05-06 台达电子工业股份有限公司 散热装置及其适用的机器人
CN112397570A (zh) * 2020-11-17 2021-02-23 华虹半导体(无锡)有限公司 半导体基底结构及其制作方法
EP4576168A1 (en) * 2023-12-22 2025-06-25 Nexperia B.V. Suppression of auto-doping during epitaxial growth of epitaxy layer in a semiconductor device

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US4104090A (en) * 1977-02-24 1978-08-01 International Business Machines Corporation Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation
US4247862B1 (en) * 1977-08-26 1995-12-26 Intel Corp Ionzation resistant mos structure
US4506436A (en) * 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
US4628591A (en) * 1984-10-31 1986-12-16 Texas Instruments Incorporated Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
JPH0793282B2 (ja) * 1985-04-15 1995-10-09 株式会社日立製作所 半導体装置の製造方法
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
US5023200A (en) * 1988-11-22 1991-06-11 The United States Of America As Represented By The United States Department Of Energy Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
US5024723A (en) * 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
JPH07187892A (ja) * 1991-06-28 1995-07-25 Internatl Business Mach Corp <Ibm> シリコン及びその形成方法
JPH06151303A (ja) * 1992-11-11 1994-05-31 Hitachi Ltd 半導体ウエーハの形成方法
US5880010A (en) * 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
US5789309A (en) * 1996-12-30 1998-08-04 Memc Electronic Materials, Inc. Method and system for monocrystalline epitaxial deposition
JPH10242153A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 半導体ウエハ、半導体ウエハの製造方法、半導体装置および半導体装置の製造方法
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JP3785067B2 (ja) * 2001-08-22 2006-06-14 株式会社東芝 半導体素子の製造方法
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Also Published As

Publication number Publication date
WO2007090055A1 (en) 2007-08-09
JP2009525622A (ja) 2009-07-09
US20090233428A1 (en) 2009-09-17
US8080482B2 (en) 2011-12-20
TWI429793B (zh) 2014-03-11
EP2637208A1 (en) 2013-09-11
EP1994562A1 (en) 2008-11-26
US20070176238A1 (en) 2007-08-02
TW200801261A (en) 2008-01-01
US20110318912A1 (en) 2011-12-29
KR20120106893A (ko) 2012-09-26
JP5261194B2 (ja) 2013-08-14
US8865601B2 (en) 2014-10-21
EP2637207A1 (en) 2013-09-11
MY153160A (en) 2015-01-29
CN101410977A (zh) 2009-04-15

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