MY153160A - Semiconductor wafer with high thermal conductivity - Google Patents

Semiconductor wafer with high thermal conductivity

Info

Publication number
MY153160A
MY153160A MYPI20082825A MYPI20082825A MY153160A MY 153160 A MY153160 A MY 153160A MY PI20082825 A MYPI20082825 A MY PI20082825A MY PI20082825 A MYPI20082825 A MY PI20082825A MY 153160 A MY153160 A MY 153160A
Authority
MY
Malaysia
Prior art keywords
semiconductor wafer
thermal conductivity
doped
high thermal
lightly
Prior art date
Application number
MYPI20082825A
Other languages
English (en)
Inventor
Michael R Seacrist
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of MY153160A publication Critical patent/MY153160A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
MYPI20082825A 2006-01-31 2007-01-26 Semiconductor wafer with high thermal conductivity MY153160A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76364306P 2006-01-31 2006-01-31

Publications (1)

Publication Number Publication Date
MY153160A true MY153160A (en) 2015-01-29

Family

ID=38121741

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20082825A MY153160A (en) 2006-01-31 2007-01-26 Semiconductor wafer with high thermal conductivity

Country Status (8)

Country Link
US (3) US20070176238A1 (enExample)
EP (3) EP2637207A1 (enExample)
JP (1) JP5261194B2 (enExample)
KR (2) KR20080098632A (enExample)
CN (1) CN101410977A (enExample)
MY (1) MY153160A (enExample)
TW (1) TWI429793B (enExample)
WO (1) WO2007090055A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090050939A1 (en) * 2007-07-17 2009-02-26 Briere Michael A Iii-nitride device
KR20100077363A (ko) * 2008-12-29 2010-07-08 주식회사 동부하이텍 씨모스 이미지 센서의 제조 방법
US7985658B2 (en) * 2009-06-08 2011-07-26 Aptina Imaging Corporation Method of forming substrate for use in imager devices
EP2555244A1 (en) * 2011-08-03 2013-02-06 austriamicrosystems AG A method of producing a photodiode device and a photodiode device comprising an etch stop layer
US8748315B2 (en) * 2012-02-15 2014-06-10 Taiwan Semiconductor Manufacturing Co., Ltd. Condition before TMAH improved device performance
US8956938B2 (en) * 2012-05-16 2015-02-17 International Business Machines Corporation Epitaxial semiconductor resistor with semiconductor structures on same substrate
US9111898B2 (en) * 2013-02-19 2015-08-18 Taiwan Semiconductor Manufacturing Company. Ltd. Multiple layer substrate
CN104064688B (zh) * 2014-07-11 2016-09-21 深圳市华星光电技术有限公司 具有存储电容的tft基板的制作方法及该tft基板
CN112776003B (zh) * 2019-11-07 2022-05-06 台达电子工业股份有限公司 散热装置及其适用的机器人
CN112397570A (zh) * 2020-11-17 2021-02-23 华虹半导体(无锡)有限公司 半导体基底结构及其制作方法
EP4576168A1 (en) * 2023-12-22 2025-06-25 Nexperia B.V. Suppression of auto-doping during epitaxial growth of epitaxy layer in a semiconductor device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104090A (en) * 1977-02-24 1978-08-01 International Business Machines Corporation Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation
US4247862B1 (en) * 1977-08-26 1995-12-26 Intel Corp Ionzation resistant mos structure
US4506436A (en) * 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
US4628591A (en) * 1984-10-31 1986-12-16 Texas Instruments Incorporated Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
JPH0793282B2 (ja) * 1985-04-15 1995-10-09 株式会社日立製作所 半導体装置の製造方法
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
US5023200A (en) * 1988-11-22 1991-06-11 The United States Of America As Represented By The United States Department Of Energy Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
US5024723A (en) * 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
JPH07187892A (ja) * 1991-06-28 1995-07-25 Internatl Business Mach Corp <Ibm> シリコン及びその形成方法
JPH06151303A (ja) * 1992-11-11 1994-05-31 Hitachi Ltd 半導体ウエーハの形成方法
US5880010A (en) * 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
US5789309A (en) * 1996-12-30 1998-08-04 Memc Electronic Materials, Inc. Method and system for monocrystalline epitaxial deposition
JPH10242153A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 半導体ウエハ、半導体ウエハの製造方法、半導体装置および半導体装置の製造方法
WO1998042010A1 (en) 1997-03-17 1998-09-24 Genus, Inc. Bonded soi wafers using high energy implant
EP1148544A1 (de) 2000-04-19 2001-10-24 Infineon Technologies AG Verfahren zum Dünnen eines Substrats
JP3785067B2 (ja) * 2001-08-22 2006-06-14 株式会社東芝 半導体素子の製造方法
JP4211696B2 (ja) 2004-06-30 2009-01-21 ソニー株式会社 固体撮像装置の製造方法
DE102004039197B4 (de) * 2004-08-12 2010-06-17 Siltronic Ag Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium

Also Published As

Publication number Publication date
WO2007090055A1 (en) 2007-08-09
JP2009525622A (ja) 2009-07-09
US20090233428A1 (en) 2009-09-17
US8080482B2 (en) 2011-12-20
TWI429793B (zh) 2014-03-11
EP2637208A1 (en) 2013-09-11
EP1994562A1 (en) 2008-11-26
US20070176238A1 (en) 2007-08-02
TW200801261A (en) 2008-01-01
US20110318912A1 (en) 2011-12-29
KR20120106893A (ko) 2012-09-26
JP5261194B2 (ja) 2013-08-14
US8865601B2 (en) 2014-10-21
EP2637207A1 (en) 2013-09-11
KR20080098632A (ko) 2008-11-11
CN101410977A (zh) 2009-04-15

Similar Documents

Publication Publication Date Title
MY153160A (en) Semiconductor wafer with high thermal conductivity
WO2008120469A1 (ja) 炭化珪素半導体素子の製造方法
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
WO2009050871A1 (ja) 半導体装置およびその製造方法
WO2012015550A3 (en) Semiconductor device and structure
SG169946A1 (en) Integrated circuit package system with through semiconductor vias and method of manufacture thereof
TW200717753A (en) Cladding material and its fabrication method, method for molding cladding material, and heat sink using cladding material
WO2009099284A3 (en) Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit
SG142149A1 (en) Method of forming pid protection diode for soi wafer
WO2007081964A3 (en) Silicon carbide dimpled substrate
TW200607127A (en) Thermoelectric module
JP2009004736A5 (enExample)
MY142246A (en) Adhesive film and process for preparing the same as well as adhesive sheet and semiconductor device
WO2010138811A3 (en) Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
TW200625511A (en) Transfer robot and transfer apparatus
TW200726340A (en) Circuit device and manufacturing method of the same
TW200608458A (en) Semiconductor wafer with layer structure with low warp and bow, and process for producing it
WO2008099597A1 (ja) 半導体装置及びその製造方法
WO2006081102A3 (en) Methods and apparatus for thermal isolation for thermoelectric devices
CN102664196B (zh) 阵列基板及多晶硅层的制作方法
TW200723484A (en) Laser fuse with efficient heat dissipation
WO2011152620A3 (ko) 정전척 및 이를 포함하는 기판 처리 장치
CN102054776A (zh) 应力记忆作用半导体器件的制造方法
TW200625648A (en) Semiconductor device and method of manufacturing the same
TWI268559B (en) A method for manufacturing a semiconductor device and a semiconductor device manufactured thereby by forming an inter-layer insulation film with a hydrogen-supplying path