JP5258194B2 - 金属電極を備えているトランジスタデバイスおよびそのようなデバイスを形成する際に用いるための方法 - Google Patents

金属電極を備えているトランジスタデバイスおよびそのようなデバイスを形成する際に用いるための方法 Download PDF

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JP5258194B2
JP5258194B2 JP2006519992A JP2006519992A JP5258194B2 JP 5258194 B2 JP5258194 B2 JP 5258194B2 JP 2006519992 A JP2006519992 A JP 2006519992A JP 2006519992 A JP2006519992 A JP 2006519992A JP 5258194 B2 JP5258194 B2 JP 5258194B2
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metal
layer
transistor device
semiconductor material
conductive support
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Japanese (ja)
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JP2007516596A (ja
JP2007516596A5 (enExample
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ルーディン，ジョン，クリストファー
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Hewlett Packard Development Co LP
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Hewlett Packard Development Co LP
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2006519992A 2003-07-12 2004-07-09 金属電極を備えているトランジスタデバイスおよびそのようなデバイスを形成する際に用いるための方法 Expired - Fee Related JP5258194B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0316395.3 2003-07-12
GBGB0316395.3A GB0316395D0 (en) 2003-07-12 2003-07-12 A transistor device with metallic electrodes and a method for use in forming such a device
PCT/GB2004/003016 WO2005008744A2 (en) 2003-07-12 2004-07-09 A transistor device with metallic electrodes and a method for use in forming such a device

Publications (3)

Publication Number Publication Date
JP2007516596A JP2007516596A (ja) 2007-06-21
JP2007516596A5 JP2007516596A5 (enExample) 2007-08-30
JP5258194B2 true JP5258194B2 (ja) 2013-08-07

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ID=27742100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006519992A Expired - Fee Related JP5258194B2 (ja) 2003-07-12 2004-07-09 金属電極を備えているトランジスタデバイスおよびそのようなデバイスを形成する際に用いるための方法

Country Status (5)

Country Link
US (1) US8519453B2 (enExample)
EP (1) EP1647047A2 (enExample)
JP (1) JP5258194B2 (enExample)
GB (1) GB0316395D0 (enExample)
WO (1) WO2005008744A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5061449B2 (ja) * 2005-10-19 2012-10-31 ソニー株式会社 半導体装置の製造方法
JP2007115804A (ja) * 2005-10-19 2007-05-10 Sony Corp 半導体装置の製造方法
EP1983592A1 (en) * 2007-04-17 2008-10-22 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Method for manufacturing an electrode
FR2931294B1 (fr) 2008-05-13 2010-09-03 Commissariat Energie Atomique Procede de realisation d'un transistor a source et drain metalliques
WO2010058541A1 (ja) * 2008-11-18 2010-05-27 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
FR2947384B1 (fr) 2009-06-25 2012-03-30 Commissariat Energie Atomique Procede de realisation d'un transistor a source et drain metalliques
US20120319113A1 (en) * 2011-06-17 2012-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8575025B2 (en) 2011-07-28 2013-11-05 Hewlett-Packard Development Company, L.P. Templated circuitry fabrication
US20140138247A1 (en) * 2012-11-21 2014-05-22 Ove T. Aanensen Apparatus and method for water treatment mainly by substitution using a dynamic electric field
CN107454979B (zh) * 2016-07-20 2021-03-26 深圳市柔宇科技股份有限公司 薄膜晶体管制造方法、tft阵列基板及柔性显示屏
US11887993B2 (en) 2019-05-13 2024-01-30 Hewlett-Packard Development Company, L.P. Thin-film transistors

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299297A (ja) * 1987-05-29 1988-12-06 Meiko Denshi Kogyo Kk 導体回路板の製造方法
JP2798769B2 (ja) * 1990-02-22 1998-09-17 三洋電機株式会社 薄膜トランジスタの製造方法
KR930010063B1 (ko) 1990-03-19 1993-10-14 가부시끼가이샤 히다찌세이사꾸쇼 다층배선기판 및 그 제조 방법
JP2969832B2 (ja) * 1990-07-09 1999-11-02 ソニー株式会社 Ｍｉｓ型半導体装置
EP0465961B1 (en) * 1990-07-09 1995-08-09 Sony Corporation Semiconductor device on a dielectric isolated substrate
JPH04199638A (ja) 1990-11-29 1992-07-20 Ricoh Co Ltd 電界効果型薄膜トランジスタ、これを用いた表示装置及びその製造方法
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
CN1495523A (zh) * 1996-08-27 2004-05-12 ������������ʽ���� 转移方法和有源矩阵基板的制造方法
US20020008464A1 (en) * 1998-12-22 2002-01-24 Christensen Alton O. Woven or ink jet printed arrays for extreme UV and X-ray source and detector
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
JP2001168420A (ja) * 1999-12-10 2001-06-22 Sharp Corp 半導体装置およびその製造方法
GB0013473D0 (en) 2000-06-03 2000-07-26 Univ Liverpool A method of electronic component fabrication and an electronic component
TW461101B (en) 2000-06-30 2001-10-21 Hannstar Display Corp Source-drain-gate coplanar polysilicon thin film transistor and the manufacturing method thereof
US6566687B2 (en) * 2001-01-18 2003-05-20 International Business Machines Corporation Metal induced self-aligned crystallization of Si layer for TFT
DE10105914C1 (de) 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
JP2002275176A (ja) 2001-03-21 2002-09-25 Kyocera Mita Corp スチルベンアミン誘導体およびそれを用いた電子写真感光体
JP2004537174A (ja) 2001-07-26 2004-12-09 テクニシェ ユニヴェルシテイト デルフト カーボンナノチューブを利用した電子デバイス
US6555411B1 (en) 2001-12-18 2003-04-29 Lucent Technologies Inc. Thin film transistors
US6620657B2 (en) * 2002-01-15 2003-09-16 International Business Machines Corporation Method of forming a planar polymer transistor using substrate bonding techniques
US6770549B2 (en) * 2002-05-08 2004-08-03 Lucent Technologies Inc. Forming patterned thin film metal layers

Also Published As

Publication number Publication date
WO2005008744A3 (en) 2005-04-07
GB0316395D0 (en) 2003-08-13
EP1647047A2 (en) 2006-04-19
JP2007516596A (ja) 2007-06-21
US20070052019A1 (en) 2007-03-08
US8519453B2 (en) 2013-08-27
WO2005008744A2 (en) 2005-01-27

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