GB0316395D0 - A transistor device with metallic electrodes and a method for use in forming such a device - Google Patents

A transistor device with metallic electrodes and a method for use in forming such a device

Info

Publication number
GB0316395D0
GB0316395D0 GBGB0316395.3A GB0316395A GB0316395D0 GB 0316395 D0 GB0316395 D0 GB 0316395D0 GB 0316395 A GB0316395 A GB 0316395A GB 0316395 D0 GB0316395 D0 GB 0316395D0
Authority
GB
United Kingdom
Prior art keywords
forming
metallic electrodes
transistor device
transistor
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0316395.3A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Priority to GBGB0316395.3A priority Critical patent/GB0316395D0/en
Publication of GB0316395D0 publication Critical patent/GB0316395D0/en
Priority to EP04743357A priority patent/EP1647047A2/en
Priority to PCT/GB2004/003016 priority patent/WO2005008744A2/en
Priority to US10/563,679 priority patent/US8519453B2/en
Priority to JP2006519992A priority patent/JP5258194B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GBGB0316395.3A 2003-07-12 2003-07-12 A transistor device with metallic electrodes and a method for use in forming such a device Ceased GB0316395D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GBGB0316395.3A GB0316395D0 (en) 2003-07-12 2003-07-12 A transistor device with metallic electrodes and a method for use in forming such a device
EP04743357A EP1647047A2 (en) 2003-07-12 2004-07-09 A transistor device with metallic electrodes and a method for use in forming such a device
PCT/GB2004/003016 WO2005008744A2 (en) 2003-07-12 2004-07-09 A transistor device with metallic electrodes and a method for use in forming such a device
US10/563,679 US8519453B2 (en) 2003-07-12 2004-07-09 Thin film transistor device with metallic electrodes
JP2006519992A JP5258194B2 (ja) 2003-07-12 2004-07-09 金属電極を備えているトランジスタデバイスおよびそのようなデバイスを形成する際に用いるための方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0316395.3A GB0316395D0 (en) 2003-07-12 2003-07-12 A transistor device with metallic electrodes and a method for use in forming such a device

Publications (1)

Publication Number Publication Date
GB0316395D0 true GB0316395D0 (en) 2003-08-13

Family

ID=27742100

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0316395.3A Ceased GB0316395D0 (en) 2003-07-12 2003-07-12 A transistor device with metallic electrodes and a method for use in forming such a device

Country Status (5)

Country Link
US (1) US8519453B2 (enExample)
EP (1) EP1647047A2 (enExample)
JP (1) JP5258194B2 (enExample)
GB (1) GB0316395D0 (enExample)
WO (1) WO2005008744A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115804A (ja) * 2005-10-19 2007-05-10 Sony Corp 半導体装置の製造方法
JP5061449B2 (ja) * 2005-10-19 2012-10-31 ソニー株式会社 半導体装置の製造方法
EP1983592A1 (en) * 2007-04-17 2008-10-22 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Method for manufacturing an electrode
FR2931294B1 (fr) 2008-05-13 2010-09-03 Commissariat Energie Atomique Procede de realisation d'un transistor a source et drain metalliques
CN101911269B (zh) * 2008-11-18 2013-05-01 松下电器产业株式会社 柔性半导体装置及其制造方法
FR2947384B1 (fr) 2009-06-25 2012-03-30 Commissariat Energie Atomique Procede de realisation d'un transistor a source et drain metalliques
TWI686871B (zh) * 2011-06-17 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8575025B2 (en) 2011-07-28 2013-11-05 Hewlett-Packard Development Company, L.P. Templated circuitry fabrication
US20140138247A1 (en) * 2012-11-21 2014-05-22 Ove T. Aanensen Apparatus and method for water treatment mainly by substitution using a dynamic electric field
CN107454979B (zh) * 2016-07-20 2021-03-26 深圳市柔宇科技股份有限公司 薄膜晶体管制造方法、tft阵列基板及柔性显示屏
WO2020231398A1 (en) * 2019-05-13 2020-11-19 Hewlett-Packard Development Company, L.P. Thin-film transistors

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299297A (ja) 1987-05-29 1988-12-06 Meiko Denshi Kogyo Kk 導体回路板の製造方法
JP2798769B2 (ja) * 1990-02-22 1998-09-17 三洋電機株式会社 薄膜トランジスタの製造方法
JPH10135634A (ja) 1990-03-19 1998-05-22 Hitachi Ltd 多層配線基板及びその製造方法
DE69111929T2 (de) * 1990-07-09 1996-03-28 Sony Corp Halbleiteranordnung auf einem dielektrischen isolierten Substrat.
JP2969832B2 (ja) * 1990-07-09 1999-11-02 ソニー株式会社 Ｍｉｓ型半導体装置
JPH04199638A (ja) 1990-11-29 1992-07-20 Ricoh Co Ltd 電界効果型薄膜トランジスタ、これを用いた表示装置及びその製造方法
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
DE69739376D1 (de) * 1996-08-27 2009-06-04 Seiko Epson Corp Ablösungsverfahren und Verfahren zum Übertragen eines Dünnfilm-Bauelements
US20020008464A1 (en) 1998-12-22 2002-01-24 Christensen Alton O. Woven or ink jet printed arrays for extreme UV and X-ray source and detector
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
JP2001168420A (ja) * 1999-12-10 2001-06-22 Sharp Corp 半導体装置およびその製造方法
GB0013473D0 (en) 2000-06-03 2000-07-26 Univ Liverpool A method of electronic component fabrication and an electronic component
TW461101B (en) 2000-06-30 2001-10-21 Hannstar Display Corp Source-drain-gate coplanar polysilicon thin film transistor and the manufacturing method thereof
US6566687B2 (en) * 2001-01-18 2003-05-20 International Business Machines Corporation Metal induced self-aligned crystallization of Si layer for TFT
DE10105914C1 (de) * 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
JP2002275176A (ja) 2001-03-21 2002-09-25 Kyocera Mita Corp スチルベンアミン誘導体およびそれを用いた電子写真感光体
WO2003010837A1 (en) 2001-07-26 2003-02-06 Technische Universiteit Delft Electronic device using carbon nanotubes
US6555411B1 (en) 2001-12-18 2003-04-29 Lucent Technologies Inc. Thin film transistors
US6620657B2 (en) * 2002-01-15 2003-09-16 International Business Machines Corporation Method of forming a planar polymer transistor using substrate bonding techniques
US6770549B2 (en) 2002-05-08 2004-08-03 Lucent Technologies Inc. Forming patterned thin film metal layers

Also Published As

Publication number Publication date
JP2007516596A (ja) 2007-06-21
US20070052019A1 (en) 2007-03-08
WO2005008744A3 (en) 2005-04-07
WO2005008744A2 (en) 2005-01-27
EP1647047A2 (en) 2006-04-19
US8519453B2 (en) 2013-08-27
JP5258194B2 (ja) 2013-08-07

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)