JP2007516596A5 - - Google Patents

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Publication number
JP2007516596A5
JP2007516596A5 JP2006519992A JP2006519992A JP2007516596A5 JP 2007516596 A5 JP2007516596 A5 JP 2007516596A5 JP 2006519992 A JP2006519992 A JP 2006519992A JP 2006519992 A JP2006519992 A JP 2006519992A JP 2007516596 A5 JP2007516596 A5 JP 2007516596A5
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JP
Japan
Prior art keywords
metal
layer
transistor device
semiconductor material
conductive support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006519992A
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English (en)
Japanese (ja)
Other versions
JP5258194B2 (ja
JP2007516596A (ja
Filing date
Publication date
Priority claimed from GBGB0316395.3A external-priority patent/GB0316395D0/en
Application filed filed Critical
Publication of JP2007516596A publication Critical patent/JP2007516596A/ja
Publication of JP2007516596A5 publication Critical patent/JP2007516596A5/ja
Application granted granted Critical
Publication of JP5258194B2 publication Critical patent/JP5258194B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006519992A 2003-07-12 2004-07-09 金属電極を備えているトランジスタデバイスおよびそのようなデバイスを形成する際に用いるための方法 Expired - Fee Related JP5258194B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0316395.3 2003-07-12
GBGB0316395.3A GB0316395D0 (en) 2003-07-12 2003-07-12 A transistor device with metallic electrodes and a method for use in forming such a device
PCT/GB2004/003016 WO2005008744A2 (en) 2003-07-12 2004-07-09 A transistor device with metallic electrodes and a method for use in forming such a device

Publications (3)

Publication Number Publication Date
JP2007516596A JP2007516596A (ja) 2007-06-21
JP2007516596A5 true JP2007516596A5 (enExample) 2007-08-30
JP5258194B2 JP5258194B2 (ja) 2013-08-07

Family

ID=27742100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006519992A Expired - Fee Related JP5258194B2 (ja) 2003-07-12 2004-07-09 金属電極を備えているトランジスタデバイスおよびそのようなデバイスを形成する際に用いるための方法

Country Status (5)

Country Link
US (1) US8519453B2 (enExample)
EP (1) EP1647047A2 (enExample)
JP (1) JP5258194B2 (enExample)
GB (1) GB0316395D0 (enExample)
WO (1) WO2005008744A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115804A (ja) * 2005-10-19 2007-05-10 Sony Corp 半導体装置の製造方法
JP5061449B2 (ja) * 2005-10-19 2012-10-31 ソニー株式会社 半導体装置の製造方法
EP1983592A1 (en) * 2007-04-17 2008-10-22 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Method for manufacturing an electrode
FR2931294B1 (fr) 2008-05-13 2010-09-03 Commissariat Energie Atomique Procede de realisation d'un transistor a source et drain metalliques
KR20110084368A (ko) * 2008-11-18 2011-07-22 파나소닉 주식회사 플렉시블 반도체 장치 및 그 제조 방법
FR2947384B1 (fr) 2009-06-25 2012-03-30 Commissariat Energie Atomique Procede de realisation d'un transistor a source et drain metalliques
TWI686871B (zh) * 2011-06-17 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8575025B2 (en) 2011-07-28 2013-11-05 Hewlett-Packard Development Company, L.P. Templated circuitry fabrication
US20140138247A1 (en) * 2012-11-21 2014-05-22 Ove T. Aanensen Apparatus and method for water treatment mainly by substitution using a dynamic electric field
CN107454979B (zh) * 2016-07-20 2021-03-26 深圳市柔宇科技股份有限公司 薄膜晶体管制造方法、tft阵列基板及柔性显示屏
WO2020231398A1 (en) * 2019-05-13 2020-11-19 Hewlett-Packard Development Company, L.P. Thin-film transistors

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
JPS63299297A (ja) * 1987-05-29 1988-12-06 Meiko Denshi Kogyo Kk 導体回路板の製造方法
JP2798769B2 (ja) * 1990-02-22 1998-09-17 三洋電機株式会社 薄膜トランジスタの製造方法
JPH10135634A (ja) 1990-03-19 1998-05-22 Hitachi Ltd 多層配線基板及びその製造方法
JP2969832B2 (ja) * 1990-07-09 1999-11-02 ソニー株式会社 Ｍｉｓ型半導体装置
DE69111929T2 (de) * 1990-07-09 1996-03-28 Sony Corp Halbleiteranordnung auf einem dielektrischen isolierten Substrat.
JPH04199638A (ja) 1990-11-29 1992-07-20 Ricoh Co Ltd 電界効果型薄膜トランジスタ、これを用いた表示装置及びその製造方法
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
KR100481994B1 (ko) 1996-08-27 2005-12-01 세이코 엡슨 가부시키가이샤 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치
US20020008464A1 (en) * 1998-12-22 2002-01-24 Christensen Alton O. Woven or ink jet printed arrays for extreme UV and X-ray source and detector
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
JP2001168420A (ja) * 1999-12-10 2001-06-22 Sharp Corp 半導体装置およびその製造方法
GB0013473D0 (en) * 2000-06-03 2000-07-26 Univ Liverpool A method of electronic component fabrication and an electronic component
TW461101B (en) 2000-06-30 2001-10-21 Hannstar Display Corp Source-drain-gate coplanar polysilicon thin film transistor and the manufacturing method thereof
US6566687B2 (en) 2001-01-18 2003-05-20 International Business Machines Corporation Metal induced self-aligned crystallization of Si layer for TFT
DE10105914C1 (de) * 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
JP2002275176A (ja) 2001-03-21 2002-09-25 Kyocera Mita Corp スチルベンアミン誘導体およびそれを用いた電子写真感光体
JP2004537174A (ja) 2001-07-26 2004-12-09 テクニシェ ユニヴェルシテイト デルフト カーボンナノチューブを利用した電子デバイス
US6555411B1 (en) * 2001-12-18 2003-04-29 Lucent Technologies Inc. Thin film transistors
US6620657B2 (en) * 2002-01-15 2003-09-16 International Business Machines Corporation Method of forming a planar polymer transistor using substrate bonding techniques
US6770549B2 (en) * 2002-05-08 2004-08-03 Lucent Technologies Inc. Forming patterned thin film metal layers

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