JP5250408B2 - 基板温調固定装置 - Google Patents

基板温調固定装置 Download PDF

Info

Publication number
JP5250408B2
JP5250408B2 JP2008328255A JP2008328255A JP5250408B2 JP 5250408 B2 JP5250408 B2 JP 5250408B2 JP 2008328255 A JP2008328255 A JP 2008328255A JP 2008328255 A JP2008328255 A JP 2008328255A JP 5250408 B2 JP5250408 B2 JP 5250408B2
Authority
JP
Japan
Prior art keywords
base
base plate
fixing device
substrate
substrate temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008328255A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010153490A5 (enExample
JP2010153490A (ja
Inventor
美喜 斉藤
忠義 吉川
晃樹 玉川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2008328255A priority Critical patent/JP5250408B2/ja
Priority to US12/643,472 priority patent/US8505928B2/en
Publication of JP2010153490A publication Critical patent/JP2010153490A/ja
Publication of JP2010153490A5 publication Critical patent/JP2010153490A5/ja
Application granted granted Critical
Publication of JP5250408B2 publication Critical patent/JP5250408B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2008328255A 2008-12-24 2008-12-24 基板温調固定装置 Active JP5250408B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008328255A JP5250408B2 (ja) 2008-12-24 2008-12-24 基板温調固定装置
US12/643,472 US8505928B2 (en) 2008-12-24 2009-12-21 Substrate temperature control fixing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008328255A JP5250408B2 (ja) 2008-12-24 2008-12-24 基板温調固定装置

Publications (3)

Publication Number Publication Date
JP2010153490A JP2010153490A (ja) 2010-07-08
JP2010153490A5 JP2010153490A5 (enExample) 2011-12-01
JP5250408B2 true JP5250408B2 (ja) 2013-07-31

Family

ID=42264876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008328255A Active JP5250408B2 (ja) 2008-12-24 2008-12-24 基板温調固定装置

Country Status (2)

Country Link
US (1) US8505928B2 (enExample)
JP (1) JP5250408B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5591627B2 (ja) * 2010-08-24 2014-09-17 太平洋セメント株式会社 セラミックス部材及びその製造方法
CN103283013B (zh) * 2010-12-27 2016-08-10 创意科技股份有限公司 工件加热装置及工件处理装置
KR101769062B1 (ko) 2011-04-27 2017-08-17 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
BR112014004909A2 (pt) * 2011-08-30 2017-03-28 Watlow Electric Mfg aquecedor de alta definição e método de operação
DE102012202370A1 (de) * 2012-02-16 2013-08-22 Webasto Ag Verfahren zur Herstellung einer Fahrzeugheizung und Fahrzeugheizung
US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
JP5984504B2 (ja) 2012-05-21 2016-09-06 新光電気工業株式会社 静電チャック、静電チャックの製造方法
JP2014138164A (ja) * 2013-01-18 2014-07-28 Sumitomo Osaka Cement Co Ltd 静電チャック装置
US20150024517A1 (en) * 2013-07-19 2015-01-22 Texas Instruments Incorporated Plasma etcher chuck band
JP2015095409A (ja) * 2013-11-13 2015-05-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5811513B2 (ja) * 2014-03-27 2015-11-11 Toto株式会社 静電チャック
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
JP6697997B2 (ja) 2016-09-30 2020-05-27 新光電気工業株式会社 静電チャック、基板固定装置
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11515192B2 (en) * 2017-10-26 2022-11-29 Kyocera Corporation Sample holder
JP6901547B2 (ja) * 2018-09-28 2021-07-14 日本特殊陶業株式会社 半導体製造用部品
CN115210860B (zh) 2021-02-04 2025-07-15 日本碍子株式会社 半导体制造装置用构件及其制法
JP2024030799A (ja) * 2022-08-25 2024-03-07 新光電気工業株式会社 基板固定装置及び基板固定装置の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240382A (ja) * 1994-02-25 1995-09-12 Tokyo Electron Ltd 真空排気システム直結型真空処理装置
US5535090A (en) * 1994-03-03 1996-07-09 Sherman; Arthur Electrostatic chuck
JPH07335731A (ja) * 1994-06-07 1995-12-22 Fujitsu Ltd 吸着装置およびその製造方法
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
US7218503B2 (en) * 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US20020036881A1 (en) * 1999-05-07 2002-03-28 Shamouil Shamouilian Electrostatic chuck having composite base and method
US6888236B2 (en) * 2000-03-07 2005-05-03 Ibiden Co., Ltd. Ceramic substrate for manufacture/inspection of semiconductor
US6444957B1 (en) * 2000-04-26 2002-09-03 Sumitomo Osaka Cement Co., Ltd Heating apparatus
WO2001091166A1 (en) * 2000-05-26 2001-11-29 Ibiden Co., Ltd. Semiconductor manufacturing and inspecting device
JP4026759B2 (ja) * 2002-11-18 2007-12-26 日本碍子株式会社 加熱装置
CN100388434C (zh) * 2003-03-12 2008-05-14 东京毅力科创株式会社 半导体处理用的基板保持结构和等离子体处理装置
JP4219927B2 (ja) * 2003-03-19 2009-02-04 東京エレクトロン株式会社 基板保持機構およびその製造方法、基板処理装置
JP4458995B2 (ja) * 2004-09-10 2010-04-28 京セラ株式会社 ウェハ支持部材
US8038796B2 (en) * 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
JP4218899B2 (ja) * 2005-07-19 2009-02-04 コミコ株式会社 静電チャックを備える基板ホルダ及びその製造方法
US7651571B2 (en) 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
JP4942471B2 (ja) * 2005-12-22 2012-05-30 京セラ株式会社 サセプタおよびこれを用いたウェハの処理方法

Also Published As

Publication number Publication date
US8505928B2 (en) 2013-08-13
US20100156055A1 (en) 2010-06-24
JP2010153490A (ja) 2010-07-08

Similar Documents

Publication Publication Date Title
JP5250408B2 (ja) 基板温調固定装置
KR102760927B1 (ko) 정전척 어셈블리
JP6108051B1 (ja) 静電チャック装置
JP4974873B2 (ja) 静電チャック及び基板温調固定装置
JP6663994B2 (ja) 静電チャック機構および半導体処理装置
JP5395633B2 (ja) 基板処理装置の基板載置台
CN110120329B (zh) 等离子体处理装置
JP6024921B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP4935143B2 (ja) 載置台及び真空処理装置
KR20160015510A (ko) 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법
JP2009158829A (ja) 静電チャック及び基板温調固定装置
KR20180021301A (ko) 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치
JP4386753B2 (ja) ウェハーステージ及びプラズマ処理装置
KR102891255B1 (ko) 정전 척 및 기판 고정 장치
CN116895504A (zh) 晶片载放台
JP6670189B2 (ja) ベースプレート構造体及びその製造方法、基板固定装置
JP4495687B2 (ja) 静電チャック
JP7697548B1 (ja) 静電チャック
JP2024104425A (ja) 基板固定装置
JP2025155193A (ja) 温度センサ装置
CN120981908A (zh) 具有先进远边缘电极、静电夹盘和嵌入式接地电极的高温可偏压加热器
CN118435342A (zh) 保持装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111013

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111013

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121026

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121030

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130409

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130415

R150 Certificate of patent or registration of utility model

Ref document number: 5250408

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160419

Year of fee payment: 3