JP5248986B2 - 薄膜堆積のための銅前駆体 - Google Patents

薄膜堆積のための銅前駆体 Download PDF

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Publication number
JP5248986B2
JP5248986B2 JP2008284616A JP2008284616A JP5248986B2 JP 5248986 B2 JP5248986 B2 JP 5248986B2 JP 2008284616 A JP2008284616 A JP 2008284616A JP 2008284616 A JP2008284616 A JP 2008284616A JP 5248986 B2 JP5248986 B2 JP 5248986B2
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JP
Japan
Prior art keywords
copper
precursor
formula
film
metal
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Expired - Fee Related
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JP2008284616A
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English (en)
Japanese (ja)
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JP2009161512A5 (https=
JP2009161512A (ja
Inventor
アンソニー トーマス ノーマン ジョン
ケー．ペレス メラニー
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Air Products and Chemicals Inc
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Air Products and Chemicals Inc
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Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
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Publication of JP2009161512A5 publication Critical patent/JP2009161512A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008284616A 2007-11-05 2008-11-05 薄膜堆積のための銅前駆体 Expired - Fee Related JP5248986B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US98542807P 2007-11-05 2007-11-05
US60/985,428 2007-11-05
US12/258,996 2008-10-27
US12/258,996 US8263795B2 (en) 2007-11-05 2008-10-27 Copper precursors for thin film deposition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013021211A Division JP2013136600A (ja) 2007-11-05 2013-02-06 薄膜堆積のための銅前駆体

Publications (3)

Publication Number Publication Date
JP2009161512A JP2009161512A (ja) 2009-07-23
JP2009161512A5 JP2009161512A5 (https=) 2011-07-21
JP5248986B2 true JP5248986B2 (ja) 2013-07-31

Family

ID=40587180

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008284616A Expired - Fee Related JP5248986B2 (ja) 2007-11-05 2008-11-05 薄膜堆積のための銅前駆体
JP2013021211A Pending JP2013136600A (ja) 2007-11-05 2013-02-06 薄膜堆積のための銅前駆体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013021211A Pending JP2013136600A (ja) 2007-11-05 2013-02-06 薄膜堆積のための銅前駆体

Country Status (5)

Country Link
US (1) US8263795B2 (https=)
JP (2) JP5248986B2 (https=)
KR (1) KR101046853B1 (https=)
CN (1) CN101514209B (https=)
TW (1) TWI353988B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013136600A (ja) * 2007-11-05 2013-07-11 Air Products & Chemicals Inc 薄膜堆積のための銅前駆体

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8962876B2 (en) 2009-05-15 2015-02-24 Wayne State University Thermally stable volatile film precursors
US9822446B2 (en) 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
US9255327B2 (en) 2010-08-24 2016-02-09 Wayne State University Thermally stable volatile precursors
DE112012002871T5 (de) * 2011-07-06 2014-03-20 Wayne State University Atomlagenabscheidung von dünnen Filmen an Übergangsmetall
US8907115B2 (en) 2012-12-10 2014-12-09 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
US9249505B2 (en) 2013-06-28 2016-02-02 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
US9157149B2 (en) 2013-06-28 2015-10-13 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
JP6362337B2 (ja) * 2014-01-21 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN103839604A (zh) * 2014-02-26 2014-06-04 京东方科技集团股份有限公司 导电膜及其制备方法、阵列基板
US9553054B2 (en) 2014-10-23 2017-01-24 Globalfoundries Inc. Strain detection structures for bonded wafers and chips
WO2018165055A1 (en) * 2017-03-06 2018-09-13 Csub Auxiliary For Sponsored Programs Administration Vapor-phase deposition of germanium nanostructures on substrates using solid-phase germanium sources
US10892186B2 (en) 2017-10-14 2021-01-12 Applied Materials, Inc. Integration of ALD copper with high temperature PVD copper deposition for BEOL interconnect
US20230151220A1 (en) * 2020-04-01 2023-05-18 Adeka Corporation Thin-film forming raw material used in atomic layer deposition method and method of producing thin-film

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
JP3079814B2 (ja) 1992-11-11 2000-08-21 三菱マテリアル株式会社 銅膜形成用材料
KR20000013302A (ko) * 1998-08-06 2000-03-06 최형수 화학 증착법을 위한 유기 구리 전구체
US6589329B1 (en) 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
US6642401B2 (en) 2000-03-14 2003-11-04 Nissan Chemical Industries, Ltd. β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
JP4660924B2 (ja) * 2000-12-25 2011-03-30 東ソー株式会社 安定化された銅錯体及びその製造方法
WO2003044242A2 (en) * 2001-11-16 2003-05-30 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
US6552209B1 (en) * 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
US20040247905A1 (en) * 2003-04-16 2004-12-09 Bradley Alexander Zak Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US7034169B1 (en) * 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
WO2008085426A1 (en) 2006-12-28 2008-07-17 Air Products And Chemicals, Inc. Volatile liquid copper precursors for thin film applications
US8283485B2 (en) * 2007-06-21 2012-10-09 Air Products And Chemicals, Inc. Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition
EP2014790A1 (en) 2007-06-21 2009-01-14 Air Products and Chemicals, Inc. Process for forming continuous copper thin films via vapor deposition
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013136600A (ja) * 2007-11-05 2013-07-11 Air Products & Chemicals Inc 薄膜堆積のための銅前駆体

Also Published As

Publication number Publication date
US8263795B2 (en) 2012-09-11
US20090114874A1 (en) 2009-05-07
CN101514209A (zh) 2009-08-26
KR20090046725A (ko) 2009-05-11
JP2009161512A (ja) 2009-07-23
TWI353988B (en) 2011-12-11
CN101514209B (zh) 2012-06-06
TW200922940A (en) 2009-06-01
JP2013136600A (ja) 2013-07-11
KR101046853B1 (ko) 2011-07-06

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