TWI353988B - Copper precursors for thin film deposition - Google Patents
Copper precursors for thin film deposition Download PDFInfo
- Publication number
- TWI353988B TWI353988B TW097142566A TW97142566A TWI353988B TW I353988 B TWI353988 B TW I353988B TW 097142566 A TW097142566 A TW 097142566A TW 97142566 A TW97142566 A TW 97142566A TW I353988 B TWI353988 B TW I353988B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- group
- precursor
- formula
- film
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98542807P | 2007-11-05 | 2007-11-05 | |
| US12/258,996 US8263795B2 (en) | 2007-11-05 | 2008-10-27 | Copper precursors for thin film deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200922940A TW200922940A (en) | 2009-06-01 |
| TWI353988B true TWI353988B (en) | 2011-12-11 |
Family
ID=40587180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097142566A TWI353988B (en) | 2007-11-05 | 2008-11-04 | Copper precursors for thin film deposition |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8263795B2 (https=) |
| JP (2) | JP5248986B2 (https=) |
| KR (1) | KR101046853B1 (https=) |
| CN (1) | CN101514209B (https=) |
| TW (1) | TWI353988B (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8263795B2 (en) * | 2007-11-05 | 2012-09-11 | Air Products And Chemicals, Inc. | Copper precursors for thin film deposition |
| US8962876B2 (en) | 2009-05-15 | 2015-02-24 | Wayne State University | Thermally stable volatile film precursors |
| US9822446B2 (en) | 2010-08-24 | 2017-11-21 | Wayne State University | Thermally stable volatile precursors |
| US9255327B2 (en) | 2010-08-24 | 2016-02-09 | Wayne State University | Thermally stable volatile precursors |
| DE112012002871T5 (de) * | 2011-07-06 | 2014-03-20 | Wayne State University | Atomlagenabscheidung von dünnen Filmen an Übergangsmetall |
| US8907115B2 (en) | 2012-12-10 | 2014-12-09 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition |
| US9758866B2 (en) | 2013-02-13 | 2017-09-12 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films |
| US9249505B2 (en) | 2013-06-28 | 2016-02-02 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
| US9157149B2 (en) | 2013-06-28 | 2015-10-13 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
| JP6362337B2 (ja) * | 2014-01-21 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN103839604A (zh) * | 2014-02-26 | 2014-06-04 | 京东方科技集团股份有限公司 | 导电膜及其制备方法、阵列基板 |
| US9553054B2 (en) | 2014-10-23 | 2017-01-24 | Globalfoundries Inc. | Strain detection structures for bonded wafers and chips |
| WO2018165055A1 (en) * | 2017-03-06 | 2018-09-13 | Csub Auxiliary For Sponsored Programs Administration | Vapor-phase deposition of germanium nanostructures on substrates using solid-phase germanium sources |
| US10892186B2 (en) | 2017-10-14 | 2021-01-12 | Applied Materials, Inc. | Integration of ALD copper with high temperature PVD copper deposition for BEOL interconnect |
| US20230151220A1 (en) * | 2020-04-01 | 2023-05-18 | Adeka Corporation | Thin-film forming raw material used in atomic layer deposition method and method of producing thin-film |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
| JP3079814B2 (ja) | 1992-11-11 | 2000-08-21 | 三菱マテリアル株式会社 | 銅膜形成用材料 |
| KR20000013302A (ko) * | 1998-08-06 | 2000-03-06 | 최형수 | 화학 증착법을 위한 유기 구리 전구체 |
| US6589329B1 (en) | 2000-03-09 | 2003-07-08 | Advanced Technology Materials, Inc. | Composition and process for production of copper circuitry in microelectronic device structures |
| US6642401B2 (en) | 2000-03-14 | 2003-11-04 | Nissan Chemical Industries, Ltd. | β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same |
| US20020013487A1 (en) * | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
| JP4660924B2 (ja) * | 2000-12-25 | 2011-03-30 | 東ソー株式会社 | 安定化された銅錯体及びその製造方法 |
| WO2003044242A2 (en) * | 2001-11-16 | 2003-05-30 | Applied Materials, Inc. | Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors |
| US6552209B1 (en) * | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
| US6869876B2 (en) * | 2002-11-05 | 2005-03-22 | Air Products And Chemicals, Inc. | Process for atomic layer deposition of metal films |
| US20040247905A1 (en) * | 2003-04-16 | 2004-12-09 | Bradley Alexander Zak | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
| US7205422B2 (en) * | 2004-12-30 | 2007-04-17 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate and metal β-diiminate complexes |
| US7034169B1 (en) * | 2004-12-30 | 2006-04-25 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate complexes |
| WO2008085426A1 (en) | 2006-12-28 | 2008-07-17 | Air Products And Chemicals, Inc. | Volatile liquid copper precursors for thin film applications |
| US8283485B2 (en) * | 2007-06-21 | 2012-10-09 | Air Products And Chemicals, Inc. | Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition |
| EP2014790A1 (en) | 2007-06-21 | 2009-01-14 | Air Products and Chemicals, Inc. | Process for forming continuous copper thin films via vapor deposition |
| US8263795B2 (en) * | 2007-11-05 | 2012-09-11 | Air Products And Chemicals, Inc. | Copper precursors for thin film deposition |
-
2008
- 2008-10-27 US US12/258,996 patent/US8263795B2/en not_active Expired - Fee Related
- 2008-11-04 TW TW097142566A patent/TWI353988B/zh not_active IP Right Cessation
- 2008-11-05 CN CN2008101887411A patent/CN101514209B/zh not_active Expired - Fee Related
- 2008-11-05 KR KR1020080109307A patent/KR101046853B1/ko not_active Expired - Fee Related
- 2008-11-05 JP JP2008284616A patent/JP5248986B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-06 JP JP2013021211A patent/JP2013136600A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP5248986B2 (ja) | 2013-07-31 |
| US8263795B2 (en) | 2012-09-11 |
| US20090114874A1 (en) | 2009-05-07 |
| CN101514209A (zh) | 2009-08-26 |
| KR20090046725A (ko) | 2009-05-11 |
| JP2009161512A (ja) | 2009-07-23 |
| CN101514209B (zh) | 2012-06-06 |
| TW200922940A (en) | 2009-06-01 |
| JP2013136600A (ja) | 2013-07-11 |
| KR101046853B1 (ko) | 2011-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |