JP5238704B2 - ハフニウム含有材料を乾式エッチングする方法およびシステム - Google Patents
ハフニウム含有材料を乾式エッチングする方法およびシステム Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 117
- 229910052735 hafnium Inorganic materials 0.000 title claims description 40
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title claims description 40
- 239000000463 material Substances 0.000 title description 20
- 238000001312 dry etching Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 97
- 239000007789 gas Substances 0.000 claims description 95
- 238000012545 processing Methods 0.000 claims description 82
- 230000008569 process Effects 0.000 claims description 77
- 238000005530 etching Methods 0.000 claims description 62
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 40
- 239000000654 additive Substances 0.000 claims description 38
- 230000000996 additive effect Effects 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000004215 Carbon black (E152) Substances 0.000 claims description 13
- 229930195733 hydrocarbon Natural products 0.000 claims description 13
- 150000002430 hydrocarbons Chemical class 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 30
- 239000010408 film Substances 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- -1 Ta 2 O 5 (k~26) Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000013401 experimental design Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 238000009931 pascalization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (16)
- 基板上のゲートスタックをエッチングする方法であって、
前記基板は、二酸化シリコン層、HfO2を含むハフニウム含有層、および多結晶シリコン層を有し、
当該方法は、
プラズマ処理システム内に、前記ゲートスタックを有する前記基板を配置するステップであって、前記基板は、前記二酸化シリコン層、前記HfO2を含むハフニウム含有層、および前記多結晶シリコン層を有し、パターンを定形するマスク層が、前記ゲートスタック層の上に配置されるステップと、
前記基板の温度を、30℃以上に昇温するステップと、
前記プラズマ処理システムに、BCl3、不活性ガスおよび添加剤ガスを含むプロセス組成物を導入するステップであって、前記添加剤ガスは、酸素含有ガス、窒素含有ガス、CxHyで表され、xおよびyは、1以上の整数である炭化水素ガス、またはこれらの2以上の組み合わせを有するステップと、
前記プラズマ処理システムにおいて、前記プロセス組成物からプラズマを形成するステップと、
前記ハフニウム含有層に前記パターンをエッチングするため、前記プラズマに前記基板を暴露するステップであって、
前記BCl3および添加剤ガスの流速を、前記基板上の前記ハフニウム含有層と前記多結晶シリコン層の間のエッチング選択性が10:1以上となるような、所定のレベルに調節するとともに、同じ所定のレベルにおいて、前記基板上の前記ハフニウム含有層と前記二酸化シリコン層の間に、10:1以上のエッチング選択性が得られるステップとすることにより、前記多結晶シリコン層および前記二酸化シリコン層のエッチングが抑制されるステップと、
を有する方法。 - 前記不活性ガスを導入するステップは、希ガスを導入するステップを有することを特徴とする請求項1に記載の方法。
- 前記添加剤ガスを導入する前記ステップは、O2、NO、NO2、N2O、CO、CO2、またはこれらの2以上の組み合わせを含む酸素含有ガスを導入するステップを有することを特徴とする請求項1に記載の方法。
- 前記添加剤ガスを導入する前記ステップは、N2、NH3、またはこれらの2以上の組み合わせを含む窒素含有ガスを導入するステップを有することを特徴とする請求項1に記載の方法。
- 前記添加剤ガスを導入する前記ステップは、C2H4、CH4、C2H2、C2H6、C3H4、C3H6、C3H8、C4H6、C4H8、C4H10、C5H8、C5H10、C6H6、C6H10、C6H12、またはこれらの2もしくは3以上の組み合わせを含む炭化水素ガスを導入するステップを有することを特徴とする請求項1に記載の方法。
- 前記添加剤ガスを導入する前記ステップは、CH4を導入するステップを有することを特徴とする請求項1に記載の方法。
- 前記添加剤ガスを導入する前記ステップは、CH4およびN2を導入するステップを有することを特徴とする請求項1に記載の方法。
- 前記基板の温度を昇温するステップは、50℃以上の温度に昇温するステップを有することを特徴とする請求項1に記載の方法。
- 前記プラズマに前記基板を暴露するステップは、前記ハフニウム含有層と前記多結晶シリコン層の間のエッチング選択性を、10:1以上にし、前記ハフニウム含有層と前記二酸化シリコン層の間のエッチング選択性を、30:1以上にするステップを有することを特徴とする請求項1に記載の方法。
- 前記プラズマを形成するステップは、前記プラズマに電力を容量結合するステップ、前記プラズマに電力を誘導結合するステップ、またはこれらの2以上の組み合わせを有することを特徴とする請求項1に記載の方法。
- 前記プラズマを形成するステップは、上部に前記基板を保持する基板ホルダに、無線周波数(RF)電力を結合するステップを有することを特徴とする請求項1に記載の方法。
- 前記プラズマを形成するステップは、上部に前記基板を保持する基板ホルダとは反対側の電極に、無線周波数(RF)電力を結合するステップを有することを特徴とする請求項1に記載の方法。
- 基板上のゲートスタックをエッチングするプラズマ処理システムであって、
前記基板は、二酸化シリコン層、HfO2を含むハフニウム含有層、および多結晶シリコン層を有し、
当該システムは、
前記ハフニウム含有層をエッチングするため、プラズマの形成を容易にするよう構成されたプラズマ処理チャンバと、
前記プラズマ処理チャンバに結合され、処理レシピを実行するように構成された制御器と、
を有し、
前記処理レシピは、
前記プラズマ処理チャンバに、BCl3、不活性ガスおよび添加剤ガスを含むプロセス組成物を導入するステップであって、前記添加剤ガスは、酸素含有ガス、窒素含有ガス、CxHyで表され、xおよびyは、1以上の整数である炭化水素ガス、またはこれらの2以上の組み合わせを有するステップ
を有し、
該ステップでは、前記制御器により、前記BCl3および添加剤ガスの流速が、前記基板上の前記ハフニウム含有層と前記多結晶シリコン層の間のエッチング選択性が10:1以上となるような、所定のレベルに調節されるとともに、同じ所定のレベルにおいて、前記基板上の前記ハフニウム含有層と前記二酸化シリコン層の間に、10:1以上のエッチング選択性が得られる、プラズマ処理システム。 - 前記基板の温度を昇温する前記ステップは、75℃以上の温度に昇温するステップを有することを特徴とする請求項1に記載の方法。
- 前記基板の温度を昇温する前記ステップは、100℃以上の温度に昇温するステップを有することを特徴とする請求項1に記載の方法。
- 前記基板の温度を昇温する前記ステップは、200℃の温度に昇温するステップを有することを特徴とする請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/518,890 US8183161B2 (en) | 2006-09-12 | 2006-09-12 | Method and system for dry etching a hafnium containing material |
US11/518,890 | 2006-09-12 | ||
PCT/US2007/078224 WO2008033886A2 (en) | 2006-09-12 | 2007-09-12 | Method and system for dry etching a hafnium containing material |
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JP2010503996A JP2010503996A (ja) | 2010-02-04 |
JP5238704B2 true JP5238704B2 (ja) | 2013-07-17 |
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Country Status (6)
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US (1) | US8183161B2 (ja) |
JP (1) | JP5238704B2 (ja) |
KR (1) | KR101411744B1 (ja) |
CN (1) | CN101511969B (ja) |
TW (1) | TWI379359B (ja) |
WO (1) | WO2008033886A2 (ja) |
Families Citing this family (17)
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US8283258B2 (en) | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
US8759228B2 (en) * | 2007-10-09 | 2014-06-24 | Micron Technology, Inc. | Chemistry and compositions for manufacturing integrated circuits |
US20100052077A1 (en) * | 2008-08-27 | 2010-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | High-k metal gate structure including buffer layer |
JP5250476B2 (ja) * | 2009-05-11 | 2013-07-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
CN102237269B (zh) * | 2010-04-21 | 2013-08-28 | 中国科学院微电子研究所 | 以氮化铝为势垒层的Mo基金属栅叠层结构的刻蚀方法 |
CN102237268B (zh) * | 2010-04-21 | 2013-08-28 | 中国科学院微电子研究所 | 一种插入式TiN金属栅叠层结构的制备和刻蚀方法 |
CN102280375B (zh) | 2010-06-08 | 2013-10-16 | 中国科学院微电子研究所 | 一种先栅工艺中叠层金属栅结构的制备方法 |
CN102315115A (zh) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | 一种HfSiAlON高K介质的干法刻蚀方法 |
JP5975418B2 (ja) * | 2011-03-25 | 2016-08-23 | 日新イオン機器株式会社 | イオン注入方法 |
CN102427036A (zh) * | 2011-07-22 | 2012-04-25 | 上海华力微电子有限公司 | 对HfO2薄膜的高选择性干法刻蚀方法 |
US8735291B2 (en) | 2011-08-25 | 2014-05-27 | Tokyo Electron Limited | Method for etching high-k dielectric using pulsed bias power |
US8704332B2 (en) | 2012-06-13 | 2014-04-22 | International Business Machines Corporation | Metal oxide semiconductor field effect transistor (MOSFET) gate termination |
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US8183161B2 (en) | 2012-05-22 |
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