JP5233535B2 - 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置 - Google Patents

撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置 Download PDF

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Publication number
JP5233535B2
JP5233535B2 JP2008233948A JP2008233948A JP5233535B2 JP 5233535 B2 JP5233535 B2 JP 5233535B2 JP 2008233948 A JP2008233948 A JP 2008233948A JP 2008233948 A JP2008233948 A JP 2008233948A JP 5233535 B2 JP5233535 B2 JP 5233535B2
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light
layer
light receiving
imaging
concentration distribution
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JP2008233948A
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Japanese (ja)
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JP2010067861A (ja
JP2010067861A5 (https=
Inventor
陽一 永井
康博 猪口
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2008233948A priority Critical patent/JP5233535B2/ja
Priority to PCT/JP2009/063246 priority patent/WO2010029813A1/ja
Priority to US13/063,444 priority patent/US8243139B2/en
Priority to EP09812961.2A priority patent/EP2328187B1/en
Publication of JP2010067861A publication Critical patent/JP2010067861A/ja
Publication of JP2010067861A5 publication Critical patent/JP2010067861A5/ja
Priority to US13/548,668 priority patent/US8564666B2/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Traffic Control Systems (AREA)
  • Alarm Systems (AREA)
JP2008233948A 2008-09-11 2008-09-11 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置 Expired - Fee Related JP5233535B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008233948A JP5233535B2 (ja) 2008-09-11 2008-09-11 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
PCT/JP2009/063246 WO2010029813A1 (ja) 2008-09-11 2009-07-24 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
US13/063,444 US8243139B2 (en) 2008-09-11 2009-07-24 Image pickup device, visibility support apparatus, night vision device, navigation support apparatus, and monitoring device
EP09812961.2A EP2328187B1 (en) 2008-09-11 2009-07-24 Image pickup device, visibility support apparatus, night vision device, navigation support apparatus, and monitoring device
US13/548,668 US8564666B2 (en) 2008-09-11 2012-07-13 Image pickup device, visibility support apparatus, night vision device, navigation support apparatus, and monitoring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008233948A JP5233535B2 (ja) 2008-09-11 2008-09-11 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置

Related Child Applications (1)

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JP2011011131A Division JP4706805B2 (ja) 2011-01-21 2011-01-21 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置

Publications (3)

Publication Number Publication Date
JP2010067861A JP2010067861A (ja) 2010-03-25
JP2010067861A5 JP2010067861A5 (https=) 2011-10-20
JP5233535B2 true JP5233535B2 (ja) 2013-07-10

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JP2008233948A Expired - Fee Related JP5233535B2 (ja) 2008-09-11 2008-09-11 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置

Country Status (4)

Country Link
US (2) US8243139B2 (https=)
EP (1) EP2328187B1 (https=)
JP (1) JP5233535B2 (https=)
WO (1) WO2010029813A1 (https=)

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JP4662188B2 (ja) 2008-02-01 2011-03-30 住友電気工業株式会社 受光素子、受光素子アレイおよびそれらの製造方法
JP5498662B2 (ja) * 2008-03-26 2014-05-21 国立大学法人 東京大学 半導体装置および半導体装置の製造方法
JP4743453B2 (ja) * 2008-12-25 2011-08-10 住友電気工業株式会社 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置
WO2010146903A1 (ja) * 2009-06-15 2010-12-23 シャープ株式会社 発光モジュール、照明装置、表示装置、およびテレビ受像装置
JP5218476B2 (ja) * 2010-06-03 2013-06-26 住友電気工業株式会社 半導体素子、光学センサ装置および半導体素子の製造方法
JP2012015170A (ja) * 2010-06-29 2012-01-19 Sumitomo Electric Ind Ltd 受光素子およびその製造方法
JP5748176B2 (ja) * 2011-11-01 2015-07-15 住友電気工業株式会社 受光素子、エピタキシャルウエハおよびその製造方法
EP2713409B1 (en) * 2012-09-27 2020-08-26 ams AG Photodiode with a field electrode for reducing the space charge region
US20140217540A1 (en) * 2013-02-04 2014-08-07 Teledyne Scientific & Imaging, Llc Fully depleted diode passivation active passivation architecture
JP6454981B2 (ja) * 2014-04-24 2019-01-23 住友電気工業株式会社 半導体積層体および受光素子
JP6877815B2 (ja) * 2014-10-17 2021-05-26 日本無線株式会社 画像生成装置
US10126582B2 (en) * 2015-07-07 2018-11-13 B. G. Negev Technologies and Applications, Ltd., at Ben-Gurion University SWIR to visible up-conversion optical system
JP2018190798A (ja) * 2017-04-28 2018-11-29 住友電気工業株式会社 赤外線検知半導体デバイス
US10461118B2 (en) 2017-12-15 2019-10-29 Atomera Incorporated Method for making CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
US10276625B1 (en) * 2017-12-15 2019-04-30 Atomera Incorporated CMOS image sensor including superlattice to enhance infrared light absorption
US10396223B2 (en) 2017-12-15 2019-08-27 Atomera Incorporated Method for making CMOS image sensor with buried superlattice layer to reduce crosstalk
US10304881B1 (en) 2017-12-15 2019-05-28 Atomera Incorporated CMOS image sensor with buried superlattice layer to reduce crosstalk
US10361243B2 (en) 2017-12-15 2019-07-23 Atomera Incorporated Method for making CMOS image sensor including superlattice to enhance infrared light absorption
US10355151B2 (en) 2017-12-15 2019-07-16 Atomera Incorporated CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
US11101119B2 (en) * 2018-12-20 2021-08-24 Elbit Systems Of America, Llc Usage and temperature compensation of performance parameters for night vision device
US11641003B2 (en) * 2019-12-03 2023-05-02 Northwestern University Methods of fabricating planar infrared photodetectors
TWI832715B (zh) * 2023-03-02 2024-02-11 聯亞光電工業股份有限公司 半導體元件
US12334321B1 (en) * 2024-08-07 2025-06-17 L3Harris Technologies, Inc. And manufacturing methods of SWIR I2TUBE via heterogeneous wafer integration

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JP2008171885A (ja) * 2007-01-09 2008-07-24 Sumitomo Electric Ind Ltd 半導体受光素子およびその製造方法
JP2008205001A (ja) * 2007-02-16 2008-09-04 Sumitomo Electric Ind Ltd 受光素子、センサおよび撮像装置
JP5515162B2 (ja) * 2007-03-23 2014-06-11 住友電気工業株式会社 半導体ウエハの製造方法
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JP5195172B2 (ja) * 2008-08-29 2013-05-08 住友電気工業株式会社 水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置
JP5233549B2 (ja) * 2008-09-22 2013-07-10 住友電気工業株式会社 食品品質検査装置、食品成分検査装置、異物成分検査装置、食味検査装置および変移状態検査装置

Also Published As

Publication number Publication date
US20110164136A1 (en) 2011-07-07
WO2010029813A1 (ja) 2010-03-18
EP2328187A1 (en) 2011-06-01
EP2328187B1 (en) 2016-11-16
US8564666B2 (en) 2013-10-22
JP2010067861A (ja) 2010-03-25
US20120274771A1 (en) 2012-11-01
US8243139B2 (en) 2012-08-14
EP2328187A4 (en) 2014-08-06

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