JP5227643B2 - 高分解能でかつ高コントラストな観察が可能な電子線応用装置 - Google Patents

高分解能でかつ高コントラストな観察が可能な電子線応用装置 Download PDF

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Publication number
JP5227643B2
JP5227643B2 JP2008104232A JP2008104232A JP5227643B2 JP 5227643 B2 JP5227643 B2 JP 5227643B2 JP 2008104232 A JP2008104232 A JP 2008104232A JP 2008104232 A JP2008104232 A JP 2008104232A JP 5227643 B2 JP5227643 B2 JP 5227643B2
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charged particle
particle beam
sample
magnetic pole
potential
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Japanese (ja)
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JP2009259444A (ja
JP2009259444A5 (enExample
Inventor
宗行 福田
直正 鈴木
智康 猩々
範次 高橋
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2008104232A priority Critical patent/JP5227643B2/ja
Priority to US12/385,612 priority patent/US8389935B2/en
Publication of JP2009259444A publication Critical patent/JP2009259444A/ja
Publication of JP2009259444A5 publication Critical patent/JP2009259444A5/ja
Priority to US13/551,452 priority patent/US8431915B2/en
Priority to US13/871,624 priority patent/US8785890B2/en
Application granted granted Critical
Publication of JP5227643B2 publication Critical patent/JP5227643B2/ja
Priority to US14/334,837 priority patent/US9159533B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2008104232A 2008-04-14 2008-04-14 高分解能でかつ高コントラストな観察が可能な電子線応用装置 Active JP5227643B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008104232A JP5227643B2 (ja) 2008-04-14 2008-04-14 高分解能でかつ高コントラストな観察が可能な電子線応用装置
US12/385,612 US8389935B2 (en) 2008-04-14 2009-04-14 Charged particle beam apparatus permitting high-resolution and high-contrast observation
US13/551,452 US8431915B2 (en) 2008-04-14 2012-07-17 Charged particle beam apparatus permitting high resolution and high-contrast observation
US13/871,624 US8785890B2 (en) 2008-04-14 2013-04-26 Charged particle beam apparatus permitting high-resolution and high-contrast observation
US14/334,837 US9159533B2 (en) 2008-04-14 2014-07-18 Charged particle beam apparatus permitting high-resolution and high-contrast observation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008104232A JP5227643B2 (ja) 2008-04-14 2008-04-14 高分解能でかつ高コントラストな観察が可能な電子線応用装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013049867A Division JP5544439B2 (ja) 2013-03-13 2013-03-13 荷電粒子線装置

Publications (3)

Publication Number Publication Date
JP2009259444A JP2009259444A (ja) 2009-11-05
JP2009259444A5 JP2009259444A5 (enExample) 2011-06-23
JP5227643B2 true JP5227643B2 (ja) 2013-07-03

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JP2008104232A Active JP5227643B2 (ja) 2008-04-14 2008-04-14 高分解能でかつ高コントラストな観察が可能な電子線応用装置

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Country Link
US (4) US8389935B2 (enExample)
JP (1) JP5227643B2 (enExample)

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JP5227643B2 (ja) * 2008-04-14 2013-07-03 株式会社日立ハイテクノロジーズ 高分解能でかつ高コントラストな観察が可能な電子線応用装置
JP5417428B2 (ja) * 2009-02-27 2014-02-12 株式会社日立ハイテクノロジーズ 電子顕微鏡および試料保持方法
JP5439498B2 (ja) * 2009-11-06 2014-03-12 株式会社日立ハイテクノロジーズ 電子顕微鏡
DE112011102731T5 (de) * 2010-08-18 2013-08-22 Hitachi High-Technologies Corporation Elektronenstrahlvorrichtung
JP5860642B2 (ja) * 2011-09-07 2016-02-16 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
EP2682978B1 (en) * 2012-07-05 2016-10-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Contamination reduction electrode for particle detector
JP5851352B2 (ja) * 2012-06-15 2016-02-03 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6138454B2 (ja) * 2012-10-29 2017-05-31 株式会社日立ハイテクノロジーズ 荷電粒子線装置
WO2014141775A1 (ja) * 2013-03-15 2014-09-18 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
KR101456794B1 (ko) * 2013-08-08 2014-11-03 (주)오로스 테크놀로지 빔 스폿 조절이 가능한 주사전자현미경 및 이를 이용한 측정방법
CN104037044B (zh) * 2014-07-09 2016-09-28 北京中科信电子装备有限公司 一种离子束垂直聚焦装置
JP2016070912A (ja) * 2014-09-26 2016-05-09 株式会社東芝 欠陥検査装置および欠陥検査方法
DE102016208689B4 (de) * 2016-05-20 2018-07-26 Carl Zeiss Microscopy Gmbh Verfahren zum Erzeugen eines Bildes eines Objekts und/oder einer Darstellung von Daten über das Objekt sowie Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
US10128083B2 (en) * 2016-06-01 2018-11-13 Vebco Instruments Inc. Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas
CN106920723A (zh) * 2017-03-06 2017-07-04 聚束科技（北京）有限公司 一种扫描聚焦系统及电子束控制方法
DE112017006802B4 (de) 2017-03-24 2021-03-25 Hitachi High-Tech Corporation Ladungsteilchenstrahl-vorrichtung
CN110431649B (zh) * 2017-03-29 2022-12-20 株式会社日立高新技术 带电粒子束装置
JP7516366B2 (ja) * 2018-11-16 2024-07-16 エーエスエムエル ネザーランズ ビー．ブイ． 電磁複合レンズ及びそのようなレンズを備えた荷電粒子光学システム
JP7161053B2 (ja) * 2019-07-02 2022-10-25 株式会社日立ハイテク 荷電粒子線装置
DE112019007399T5 (de) 2019-07-02 2022-02-24 Hitachi High-Tech Corporation Ladungsteilchenstrahleinrichtung
US12451319B2 (en) 2020-10-05 2025-10-21 Kla Corporation Electron source with magnetic suppressor electrode
JP2022112137A (ja) * 2021-01-21 2022-08-02 株式会社日立ハイテク 荷電粒子ビーム装置
CN115714080B (zh) * 2023-01-10 2023-04-28 苏州矽视科技有限公司 一种扫描电子束成像设备及成像方法
DE102023201799A1 (de) 2023-02-28 2024-08-29 Carl Zeiss Smt Gmbh Erzeugung eines elektrischen Feldes beim Bearbeiten eines Objekts für die Lithografie

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JPH05225936A (ja) 1992-02-07 1993-09-03 Elionix Kk 走査電子顕微鏡の対物レンズ
JP2927627B2 (ja) 1992-10-20 1999-07-28 株式会社日立製作所 走査電子顕微鏡
JPH06260127A (ja) 1993-03-04 1994-09-16 Fujitsu Ltd 電子ビーム装置
US5644132A (en) * 1994-06-20 1997-07-01 Opan Technologies Ltd. System for high resolution imaging and measurement of topographic and material features on a specimen
US5466940A (en) * 1994-06-20 1995-11-14 Opal Technologies Ltd. Electron detector with high backscattered electron acceptance for particle beam apparatus
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JPH09147775A (ja) 1995-11-27 1997-06-06 Jeol Ltd 走査電子顕微鏡用対物レンズ
JPH10106466A (ja) 1996-09-30 1998-04-24 Eiko Eng:Kk 磁界形対物電子レンズ
JPH10125271A (ja) 1996-10-16 1998-05-15 Hitachi Ltd 走査型電子顕微鏡
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JP4162343B2 (ja) * 1999-12-24 2008-10-08 エスアイアイ・ナノテクノロジー株式会社 電子線装置
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JP4613405B2 (ja) * 2000-09-06 2011-01-19 株式会社日立製作所 走査型電子顕微鏡
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JP2003187733A (ja) * 2001-12-14 2003-07-04 Ebara Corp 電子線装置及びこの装置を用いたデバイス製造方法
JP4005411B2 (ja) 2002-05-15 2007-11-07 エスアイアイ・ナノテクノロジー株式会社 電子線装置
KR100889866B1 (ko) * 2004-06-14 2009-03-24 엘지전자 주식회사 무선 프로토콜 계층의 데이터 송수신 시스템에서 전송데이터 유닛 처리 방법
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JP4795847B2 (ja) 2006-05-17 2011-10-19 株式会社日立ハイテクノロジーズ 電子レンズ及びそれを用いた荷電粒子線装置
JP4878501B2 (ja) 2006-05-25 2012-02-15 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
US7705301B2 (en) * 2006-07-07 2010-04-27 Hermes Microvision, Inc. Electron beam apparatus to collect side-view and/or plane-view image with in-lens sectional detector
JP5227643B2 (ja) * 2008-04-14 2013-07-03 株式会社日立ハイテクノロジーズ 高分解能でかつ高コントラストな観察が可能な電子線応用装置
WO2011016182A1 (ja) * 2009-08-03 2011-02-10 株式会社日立ハイテクノロジーズ 荷電粒子顕微鏡

Also Published As

Publication number Publication date
US20090256076A1 (en) 2009-10-15
US20130228701A1 (en) 2013-09-05
US8785890B2 (en) 2014-07-22
US8389935B2 (en) 2013-03-05
JP2009259444A (ja) 2009-11-05
US20120280126A1 (en) 2012-11-08
US20140326879A1 (en) 2014-11-06
US9159533B2 (en) 2015-10-13
US8431915B2 (en) 2013-04-30

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