JP5225139B2 - フォトリソグラフィ用高分子化合物の金属イオン不純物除去方法 - Google Patents

フォトリソグラフィ用高分子化合物の金属イオン不純物除去方法 Download PDF

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JP5225139B2
JP5225139B2 JP2009036289A JP2009036289A JP5225139B2 JP 5225139 B2 JP5225139 B2 JP 5225139B2 JP 2009036289 A JP2009036289 A JP 2009036289A JP 2009036289 A JP2009036289 A JP 2009036289A JP 5225139 B2 JP5225139 B2 JP 5225139B2
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polymer compound
metal ion
filter
polymerization
reaction
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JP2010189563A5 (enExample
JP2010189563A (ja
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大祐 松本
征司 土屋
晋一 前田
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
Mitsubishi Rayon Co Ltd
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  • Materials For Photolithography (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2009036289A 2009-02-19 2009-02-19 フォトリソグラフィ用高分子化合物の金属イオン不純物除去方法 Active JP5225139B2 (ja)

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JP2009036289A JP5225139B2 (ja) 2009-02-19 2009-02-19 フォトリソグラフィ用高分子化合物の金属イオン不純物除去方法

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JP2009036289A JP5225139B2 (ja) 2009-02-19 2009-02-19 フォトリソグラフィ用高分子化合物の金属イオン不純物除去方法

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JP2010189563A5 JP2010189563A5 (enExample) 2012-03-08
JP5225139B2 true JP5225139B2 (ja) 2013-07-03

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5854253B2 (ja) * 2011-03-29 2016-02-09 三菱レイヨン株式会社 半導体リソグラフィー用高分子化合物の製造方法
JP5858273B2 (ja) * 2011-04-06 2016-02-10 三菱レイヨン株式会社 半導体リソグラフィー用高分子化合物の製造方法
JP5935328B2 (ja) * 2012-01-11 2016-06-15 三菱レイヨン株式会社 β位に置換基を持つラクトン構造を有する化合物または重合体の製造方法
US10307752B2 (en) 2012-06-26 2019-06-04 Mitsubishi Chemical Corporation Method for producing polymer, and polymer
JP5914241B2 (ja) * 2012-08-07 2016-05-11 株式会社ダイセル 高分子化合物の製造方法、高分子化合物、及びフォトレジスト用樹脂組成物
JP6086618B2 (ja) * 2015-02-13 2017-03-01 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びレジスト膜
JP2019040201A (ja) * 2018-10-30 2019-03-14 信越化学工業株式会社 パターン形成方法
JP7249904B2 (ja) 2019-07-25 2023-03-31 丸善石油化学株式会社 酸分解性樹脂の製造方法
US11651961B2 (en) * 2019-08-02 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning process of a semiconductor structure with enhanced adhesion
CN119179230A (zh) * 2024-09-29 2024-12-24 国科天骥(山东)新材料有限责任公司 一种含自交联树脂的电子束光刻胶组合物及其制备方法和应用
CN119200332A (zh) * 2024-09-29 2024-12-27 国科天骥(山东)新材料有限责任公司 一种用于电子束光刻工艺的层状结构及其光刻工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2819250B2 (ja) * 1994-12-15 1998-10-30 丸善石油化学株式会社 ビニルフェノール系重合体の金属除去法
JP3363051B2 (ja) * 1997-02-21 2003-01-07 丸善石油化学株式会社 ビニルフェノール系重合体の金属除去法
JP2001350266A (ja) * 2000-06-09 2001-12-21 Sumitomo Chem Co Ltd レジスト組成物の製造方法
JP2003238682A (ja) * 2002-02-19 2003-08-27 Sumitomo Bakelite Co Ltd ポリアミド系化合物中の金属除去方法
JP4637476B2 (ja) * 2002-12-19 2011-02-23 東京応化工業株式会社 ホトレジスト組成物の製造方法
JP3841107B2 (ja) * 2003-02-21 2006-11-01 Jsr株式会社 ネガ型感放射線性樹脂組成物

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