JP5224667B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5224667B2
JP5224667B2 JP2006247496A JP2006247496A JP5224667B2 JP 5224667 B2 JP5224667 B2 JP 5224667B2 JP 2006247496 A JP2006247496 A JP 2006247496A JP 2006247496 A JP2006247496 A JP 2006247496A JP 5224667 B2 JP5224667 B2 JP 5224667B2
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JP
Japan
Prior art keywords
film
light
polarized light
resist
reflectance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006247496A
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English (en)
Japanese (ja)
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JP2007123842A5 (enExample
JP2007123842A (ja
Inventor
健夫 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2006247496A priority Critical patent/JP5224667B2/ja
Priority to TW095135334A priority patent/TWI390596B/zh
Priority to US11/535,273 priority patent/US7544619B2/en
Priority to KR1020060095918A priority patent/KR101279270B1/ko
Priority to CN2006100639468A priority patent/CN1983510B/zh
Publication of JP2007123842A publication Critical patent/JP2007123842A/ja
Priority to US12/466,549 priority patent/US7935636B2/en
Publication of JP2007123842A5 publication Critical patent/JP2007123842A5/ja
Application granted granted Critical
Publication of JP5224667B2 publication Critical patent/JP5224667B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006247496A 2005-09-29 2006-09-13 半導体装置の製造方法 Expired - Fee Related JP5224667B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006247496A JP5224667B2 (ja) 2005-09-29 2006-09-13 半導体装置の製造方法
TW095135334A TWI390596B (zh) 2005-09-29 2006-09-25 半導體裝置之製造方法
US11/535,273 US7544619B2 (en) 2005-09-29 2006-09-26 Method of fabricating semiconductor device
CN2006100639468A CN1983510B (zh) 2005-09-29 2006-09-29 半导体装置的制造方法
KR1020060095918A KR101279270B1 (ko) 2005-09-29 2006-09-29 반도체 장치의 제조 방법
US12/466,549 US7935636B2 (en) 2005-09-29 2009-05-15 Method of fabricating semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005285012 2005-09-29
JP2005285012 2005-09-29
JP2006247496A JP5224667B2 (ja) 2005-09-29 2006-09-13 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007123842A JP2007123842A (ja) 2007-05-17
JP2007123842A5 JP2007123842A5 (enExample) 2009-08-27
JP5224667B2 true JP5224667B2 (ja) 2013-07-03

Family

ID=37894613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006247496A Expired - Fee Related JP5224667B2 (ja) 2005-09-29 2006-09-13 半導体装置の製造方法

Country Status (5)

Country Link
US (2) US7544619B2 (enExample)
JP (1) JP5224667B2 (enExample)
KR (1) KR101279270B1 (enExample)
CN (1) CN1983510B (enExample)
TW (1) TWI390596B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096089A (ja) * 2005-09-29 2007-04-12 Renesas Technology Corp 露光装置
JP5224667B2 (ja) * 2005-09-29 2013-07-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7592265B2 (en) * 2007-01-04 2009-09-22 United Microelectronics Corp. Method of trimming a hard mask layer, method for fabricating a gate in a MOS transistor, and a stack for fabricating a gate in a MOS transistor
JP2009010196A (ja) * 2007-06-28 2009-01-15 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化方法及び結晶化装置
JP4452311B2 (ja) * 2007-08-30 2010-04-21 株式会社有沢製作所 反射防止膜形成用組成物、及び画像表示装置
NL1036018A1 (nl) * 2007-10-09 2009-04-15 Asml Netherlands Bv A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus.
JP2009194196A (ja) * 2008-02-15 2009-08-27 Nec Electronics Corp 半導体装置の製造方法および半導体装置
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
US7883946B1 (en) 2008-05-08 2011-02-08 Altera Corporation Angled implantation for deep submicron device optimization
JP2009277903A (ja) * 2008-05-15 2009-11-26 Panasonic Corp 電子部品形成装置および電子部品
KR102870782B1 (ko) * 2019-08-06 2025-10-13 엘지전자 주식회사 디스플레이 장치의 제조 방법 및 디스플레이 장치 제조를 위한 전사 기판
CN120266057A (zh) * 2022-12-09 2025-07-04 Asml荷兰有限公司 利用集成的光子传感器确定用于对衬底成像的聚焦位置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140418A (ja) * 1985-12-16 1987-06-24 Canon Inc 面位置検知装置
US4846552A (en) * 1986-04-16 1989-07-11 The United States Of America As Represented By The Secretary Of The Air Force Method of fabricating high efficiency binary planar optical elements
US6094268A (en) * 1989-04-21 2000-07-25 Hitachi, Ltd. Projection exposure apparatus and projection exposure method
US5227862A (en) * 1989-04-21 1993-07-13 Hitachi, Ltd. Projection exposure apparatus and projection exposure method
US5298365A (en) * 1990-03-20 1994-03-29 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5539514A (en) * 1991-06-26 1996-07-23 Hitachi, Ltd. Foreign particle inspection apparatus and method with front and back illumination
JP2924344B2 (ja) * 1991-08-09 1999-07-26 キヤノン株式会社 投影露光装置
JP3204406B2 (ja) * 1991-10-30 2001-09-04 株式会社ニコン 面位置検出方法及び装置、半導体露光装置、並びに前記方法を用いた露光方法
JP3303436B2 (ja) * 1993-05-14 2002-07-22 キヤノン株式会社 投影露光装置及び半導体素子の製造方法
US5677757A (en) * 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
KR0153796B1 (ko) * 1993-09-24 1998-11-16 사토 후미오 노광장치 및 노광방법
KR950033689A (ko) * 1994-03-02 1995-12-26 오노 시게오 노광장치 및 이를 이용한 회로패턴 형성방법
US5783833A (en) * 1994-12-12 1998-07-21 Nikon Corporation Method and apparatus for alignment with a substrate, using coma imparting optics
JPH0936017A (ja) * 1995-07-20 1997-02-07 Hitachi Ltd パタン形成方法及びそれを用いた半導体素子の製造方法
US6594012B2 (en) * 1996-07-05 2003-07-15 Canon Kabushiki Kaisha Exposure apparatus
JP3618907B2 (ja) * 1996-07-05 2005-02-09 キヤノン株式会社 パターン形成状態検出装置、及びこれを用いた投影露光装置
JPH1070064A (ja) * 1996-08-27 1998-03-10 Nikon Corp 投影露光装置
JPH10284402A (ja) * 1997-04-03 1998-10-23 Canon Inc パターン位置情報検出装置及びそれを用いた投影露光装置
DE10080898T1 (de) 1999-03-29 2001-06-28 Nikon Corp Mehrschicht-Antireflexionsfilm, optisches Element und Reduktionsprojektionsbelichtungsapparat
US7127098B2 (en) * 2001-09-13 2006-10-24 Hitachi, Ltd. Image detection method and its apparatus and defect detection method and its apparatus
JP3605064B2 (ja) * 2001-10-15 2004-12-22 株式会社ルネサステクノロジ フォーカスモニタ用フォトマスク、フォーカスモニタ方法、フォーカスモニタ用装置および装置の製造方法
JP2003303761A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd パターン形成方法
JP2004301825A (ja) * 2002-12-10 2004-10-28 Nikon Corp 面位置検出装置、露光方法、及びデバイス製造方法
JP3997199B2 (ja) 2002-12-10 2007-10-24 キヤノン株式会社 露光方法及び装置
JP2004273940A (ja) * 2003-03-11 2004-09-30 Semiconductor Leading Edge Technologies Inc パターン形成方法およびパターン形成装置
JP4265766B2 (ja) 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JPWO2005038885A1 (ja) * 2003-10-16 2007-02-01 株式会社ニコン 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法
JP3984950B2 (ja) * 2003-11-12 2007-10-03 キヤノン株式会社 照明光学系及びそれを有する露光装置
US7265364B2 (en) * 2004-06-10 2007-09-04 Asml Netherlands B.V. Level sensor for lithographic apparatus
KR101193830B1 (ko) * 2004-08-09 2012-10-23 가부시키가이샤 니콘 광학 특성 계측 장치 및 광학 특성 계측 방법, 노광 장치및 노광 방법, 그리고 디바이스 제조 방법
JP5224667B2 (ja) * 2005-09-29 2013-07-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007096089A (ja) * 2005-09-29 2007-04-12 Renesas Technology Corp 露光装置

Also Published As

Publication number Publication date
KR101279270B1 (ko) 2013-06-26
TWI390596B (zh) 2013-03-21
US7935636B2 (en) 2011-05-03
KR20070036725A (ko) 2007-04-03
CN1983510B (zh) 2010-05-12
US7544619B2 (en) 2009-06-09
US20090227046A1 (en) 2009-09-10
US20070072351A1 (en) 2007-03-29
JP2007123842A (ja) 2007-05-17
TW200725697A (en) 2007-07-01
CN1983510A (zh) 2007-06-20

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