KR101279270B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR101279270B1
KR101279270B1 KR1020060095918A KR20060095918A KR101279270B1 KR 101279270 B1 KR101279270 B1 KR 101279270B1 KR 1020060095918 A KR1020060095918 A KR 1020060095918A KR 20060095918 A KR20060095918 A KR 20060095918A KR 101279270 B1 KR101279270 B1 KR 101279270B1
Authority
KR
South Korea
Prior art keywords
film
light
polarized light
resist
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060095918A
Other languages
English (en)
Korean (ko)
Other versions
KR20070036725A (ko
Inventor
다케오 이시바시
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 르네사스 일렉트로닉스 가부시키가이샤 filed Critical 르네사스 일렉트로닉스 가부시키가이샤
Publication of KR20070036725A publication Critical patent/KR20070036725A/ko
Application granted granted Critical
Publication of KR101279270B1 publication Critical patent/KR101279270B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020060095918A 2005-09-29 2006-09-29 반도체 장치의 제조 방법 Expired - Fee Related KR101279270B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005285012 2005-09-29
JPJP-P-2005-00285012 2005-09-29
JPJP-P-2006-00247496 2006-09-13
JP2006247496A JP5224667B2 (ja) 2005-09-29 2006-09-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20070036725A KR20070036725A (ko) 2007-04-03
KR101279270B1 true KR101279270B1 (ko) 2013-06-26

Family

ID=37894613

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060095918A Expired - Fee Related KR101279270B1 (ko) 2005-09-29 2006-09-29 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (2) US7544619B2 (enExample)
JP (1) JP5224667B2 (enExample)
KR (1) KR101279270B1 (enExample)
CN (1) CN1983510B (enExample)
TW (1) TWI390596B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096089A (ja) * 2005-09-29 2007-04-12 Renesas Technology Corp 露光装置
JP5224667B2 (ja) * 2005-09-29 2013-07-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7592265B2 (en) * 2007-01-04 2009-09-22 United Microelectronics Corp. Method of trimming a hard mask layer, method for fabricating a gate in a MOS transistor, and a stack for fabricating a gate in a MOS transistor
JP2009010196A (ja) * 2007-06-28 2009-01-15 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化方法及び結晶化装置
JP4452311B2 (ja) * 2007-08-30 2010-04-21 株式会社有沢製作所 反射防止膜形成用組成物、及び画像表示装置
NL1036018A1 (nl) * 2007-10-09 2009-04-15 Asml Netherlands Bv A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus.
JP2009194196A (ja) * 2008-02-15 2009-08-27 Nec Electronics Corp 半導体装置の製造方法および半導体装置
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
US7883946B1 (en) 2008-05-08 2011-02-08 Altera Corporation Angled implantation for deep submicron device optimization
JP2009277903A (ja) * 2008-05-15 2009-11-26 Panasonic Corp 電子部品形成装置および電子部品
KR102870782B1 (ko) * 2019-08-06 2025-10-13 엘지전자 주식회사 디스플레이 장치의 제조 방법 및 디스플레이 장치 제조를 위한 전사 기판
CN120266057A (zh) * 2022-12-09 2025-07-04 Asml荷兰有限公司 利用集成的光子传感器确定用于对衬底成像的聚焦位置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129182A (ja) * 1991-10-30 1993-05-25 Nikon Corp 面位置検出装置
JP2003303761A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd パターン形成方法
JP2004273940A (ja) * 2003-03-11 2004-09-30 Semiconductor Leading Edge Technologies Inc パターン形成方法およびパターン形成装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140418A (ja) * 1985-12-16 1987-06-24 Canon Inc 面位置検知装置
US4846552A (en) * 1986-04-16 1989-07-11 The United States Of America As Represented By The Secretary Of The Air Force Method of fabricating high efficiency binary planar optical elements
US6094268A (en) * 1989-04-21 2000-07-25 Hitachi, Ltd. Projection exposure apparatus and projection exposure method
US5227862A (en) * 1989-04-21 1993-07-13 Hitachi, Ltd. Projection exposure apparatus and projection exposure method
US5298365A (en) * 1990-03-20 1994-03-29 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5539514A (en) * 1991-06-26 1996-07-23 Hitachi, Ltd. Foreign particle inspection apparatus and method with front and back illumination
JP2924344B2 (ja) * 1991-08-09 1999-07-26 キヤノン株式会社 投影露光装置
JP3303436B2 (ja) * 1993-05-14 2002-07-22 キヤノン株式会社 投影露光装置及び半導体素子の製造方法
US5677757A (en) * 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
KR0153796B1 (ko) * 1993-09-24 1998-11-16 사토 후미오 노광장치 및 노광방법
KR950033689A (ko) * 1994-03-02 1995-12-26 오노 시게오 노광장치 및 이를 이용한 회로패턴 형성방법
US5783833A (en) * 1994-12-12 1998-07-21 Nikon Corporation Method and apparatus for alignment with a substrate, using coma imparting optics
JPH0936017A (ja) * 1995-07-20 1997-02-07 Hitachi Ltd パタン形成方法及びそれを用いた半導体素子の製造方法
US6594012B2 (en) * 1996-07-05 2003-07-15 Canon Kabushiki Kaisha Exposure apparatus
JP3618907B2 (ja) * 1996-07-05 2005-02-09 キヤノン株式会社 パターン形成状態検出装置、及びこれを用いた投影露光装置
JPH1070064A (ja) * 1996-08-27 1998-03-10 Nikon Corp 投影露光装置
JPH10284402A (ja) * 1997-04-03 1998-10-23 Canon Inc パターン位置情報検出装置及びそれを用いた投影露光装置
DE10080898T1 (de) 1999-03-29 2001-06-28 Nikon Corp Mehrschicht-Antireflexionsfilm, optisches Element und Reduktionsprojektionsbelichtungsapparat
US7127098B2 (en) * 2001-09-13 2006-10-24 Hitachi, Ltd. Image detection method and its apparatus and defect detection method and its apparatus
JP3605064B2 (ja) * 2001-10-15 2004-12-22 株式会社ルネサステクノロジ フォーカスモニタ用フォトマスク、フォーカスモニタ方法、フォーカスモニタ用装置および装置の製造方法
JP2004301825A (ja) * 2002-12-10 2004-10-28 Nikon Corp 面位置検出装置、露光方法、及びデバイス製造方法
JP3997199B2 (ja) 2002-12-10 2007-10-24 キヤノン株式会社 露光方法及び装置
JP4265766B2 (ja) 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JPWO2005038885A1 (ja) * 2003-10-16 2007-02-01 株式会社ニコン 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法
JP3984950B2 (ja) * 2003-11-12 2007-10-03 キヤノン株式会社 照明光学系及びそれを有する露光装置
US7265364B2 (en) * 2004-06-10 2007-09-04 Asml Netherlands B.V. Level sensor for lithographic apparatus
KR101193830B1 (ko) * 2004-08-09 2012-10-23 가부시키가이샤 니콘 광학 특성 계측 장치 및 광학 특성 계측 방법, 노광 장치및 노광 방법, 그리고 디바이스 제조 방법
JP5224667B2 (ja) * 2005-09-29 2013-07-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007096089A (ja) * 2005-09-29 2007-04-12 Renesas Technology Corp 露光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129182A (ja) * 1991-10-30 1993-05-25 Nikon Corp 面位置検出装置
JP2003303761A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd パターン形成方法
JP2004273940A (ja) * 2003-03-11 2004-09-30 Semiconductor Leading Edge Technologies Inc パターン形成方法およびパターン形成装置

Also Published As

Publication number Publication date
TWI390596B (zh) 2013-03-21
US7935636B2 (en) 2011-05-03
KR20070036725A (ko) 2007-04-03
CN1983510B (zh) 2010-05-12
US7544619B2 (en) 2009-06-09
JP5224667B2 (ja) 2013-07-03
US20090227046A1 (en) 2009-09-10
US20070072351A1 (en) 2007-03-29
JP2007123842A (ja) 2007-05-17
TW200725697A (en) 2007-07-01
CN1983510A (zh) 2007-06-20

Similar Documents

Publication Publication Date Title
US7935636B2 (en) Method of fabricating semiconductor device
EP1820061B1 (en) Method of forming a patterned material using a silicon containing tarc/barrier layer
US6986971B2 (en) Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same
US7803521B2 (en) Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
US8625096B2 (en) Method and system for increasing alignment target contrast
US20120205787A1 (en) Organic graded spin on barc compositions for high na lithography
JP2585010B2 (ja) プロジェクション・プリンタ−の焦点合わせ方法
EP1542078A1 (en) Composition for antireflection coating and method for forming pattern
US8227180B2 (en) Photolithography focus improvement by reduction of autofocus radiation transmission into substrate
JP2007096089A (ja) 露光装置
US20070269749A1 (en) Methods to reduce the minimum pitch in a pattern
EP0885407A1 (en) Bottom antireflective coatings through refractive index modification by anomalous dispersion
KR102048741B1 (ko) 검출 장치, 계측 장치, 노광 장치, 및 물품의 제조 방법
US20080220223A1 (en) Resist cover film forming material, resist pattern forming method, and electronic device and method for manufacturing the same
JP2007123842A5 (enExample)
US9280046B2 (en) Method of fabricating mask
JP2008090303A (ja) レジストの最適化によるウオータマーク欠陥の低減
US5863709A (en) Deep UV photolithography with reduced halation
Chou et al. Antireflection strategies for sub-0.18-um dual-damascene structure patterning in KrF 248-nm lithography
JP2007049026A (ja) 微細パターンの形成方法およびその形成材料
TWI587093B (zh) 三層型光阻結構和其製造方法
US7855048B1 (en) Wafer assembly having a contrast enhancing top anti-reflecting coating and method of lithographic processing
Lee et al. Optimization of BARC process for hyper-NA immersion lithography
Farrar et al. 0.35-micron DUV lithography for poly gate layer
Higashikawa et al. Recent Progress in Excimer Laser Lithography

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R19-X000 Request for party data change rejected

St.27 status event code: A-3-3-R10-R19-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160621

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160621

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000