JP2007123842A5 - - Google Patents

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Publication number
JP2007123842A5
JP2007123842A5 JP2006247496A JP2006247496A JP2007123842A5 JP 2007123842 A5 JP2007123842 A5 JP 2007123842A5 JP 2006247496 A JP2006247496 A JP 2006247496A JP 2006247496 A JP2006247496 A JP 2006247496A JP 2007123842 A5 JP2007123842 A5 JP 2007123842A5
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JP
Japan
Prior art keywords
film
polarized light
manufacturing
forming
semiconductor device
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Application number
JP2006247496A
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English (en)
Japanese (ja)
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JP5224667B2 (ja
JP2007123842A (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2006247496A external-priority patent/JP5224667B2/ja
Priority to JP2006247496A priority Critical patent/JP5224667B2/ja
Priority to TW095135334A priority patent/TWI390596B/zh
Priority to US11/535,273 priority patent/US7544619B2/en
Priority to KR1020060095918A priority patent/KR101279270B1/ko
Priority to CN2006100639468A priority patent/CN1983510B/zh
Publication of JP2007123842A publication Critical patent/JP2007123842A/ja
Priority to US12/466,549 priority patent/US7935636B2/en
Publication of JP2007123842A5 publication Critical patent/JP2007123842A5/ja
Publication of JP5224667B2 publication Critical patent/JP5224667B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006247496A 2005-09-29 2006-09-13 半導体装置の製造方法 Expired - Fee Related JP5224667B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006247496A JP5224667B2 (ja) 2005-09-29 2006-09-13 半導体装置の製造方法
TW095135334A TWI390596B (zh) 2005-09-29 2006-09-25 半導體裝置之製造方法
US11/535,273 US7544619B2 (en) 2005-09-29 2006-09-26 Method of fabricating semiconductor device
CN2006100639468A CN1983510B (zh) 2005-09-29 2006-09-29 半导体装置的制造方法
KR1020060095918A KR101279270B1 (ko) 2005-09-29 2006-09-29 반도체 장치의 제조 방법
US12/466,549 US7935636B2 (en) 2005-09-29 2009-05-15 Method of fabricating semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005285012 2005-09-29
JP2005285012 2005-09-29
JP2006247496A JP5224667B2 (ja) 2005-09-29 2006-09-13 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007123842A JP2007123842A (ja) 2007-05-17
JP2007123842A5 true JP2007123842A5 (enExample) 2009-08-27
JP5224667B2 JP5224667B2 (ja) 2013-07-03

Family

ID=37894613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006247496A Expired - Fee Related JP5224667B2 (ja) 2005-09-29 2006-09-13 半導体装置の製造方法

Country Status (5)

Country Link
US (2) US7544619B2 (enExample)
JP (1) JP5224667B2 (enExample)
KR (1) KR101279270B1 (enExample)
CN (1) CN1983510B (enExample)
TW (1) TWI390596B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096089A (ja) * 2005-09-29 2007-04-12 Renesas Technology Corp 露光装置
JP5224667B2 (ja) * 2005-09-29 2013-07-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7592265B2 (en) * 2007-01-04 2009-09-22 United Microelectronics Corp. Method of trimming a hard mask layer, method for fabricating a gate in a MOS transistor, and a stack for fabricating a gate in a MOS transistor
JP2009010196A (ja) * 2007-06-28 2009-01-15 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化方法及び結晶化装置
JP4452311B2 (ja) * 2007-08-30 2010-04-21 株式会社有沢製作所 反射防止膜形成用組成物、及び画像表示装置
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JP2009194196A (ja) * 2008-02-15 2009-08-27 Nec Electronics Corp 半導体装置の製造方法および半導体装置
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
US7883946B1 (en) 2008-05-08 2011-02-08 Altera Corporation Angled implantation for deep submicron device optimization
JP2009277903A (ja) * 2008-05-15 2009-11-26 Panasonic Corp 電子部品形成装置および電子部品
KR102870782B1 (ko) * 2019-08-06 2025-10-13 엘지전자 주식회사 디스플레이 장치의 제조 방법 및 디스플레이 장치 제조를 위한 전사 기판
CN120266057A (zh) * 2022-12-09 2025-07-04 Asml荷兰有限公司 利用集成的光子传感器确定用于对衬底成像的聚焦位置

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JP2004273940A (ja) * 2003-03-11 2004-09-30 Semiconductor Leading Edge Technologies Inc パターン形成方法およびパターン形成装置
JP4265766B2 (ja) 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JPWO2005038885A1 (ja) * 2003-10-16 2007-02-01 株式会社ニコン 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法
JP3984950B2 (ja) * 2003-11-12 2007-10-03 キヤノン株式会社 照明光学系及びそれを有する露光装置
US7265364B2 (en) * 2004-06-10 2007-09-04 Asml Netherlands B.V. Level sensor for lithographic apparatus
KR101193830B1 (ko) * 2004-08-09 2012-10-23 가부시키가이샤 니콘 광학 특성 계측 장치 및 광학 특성 계측 방법, 노광 장치및 노광 방법, 그리고 디바이스 제조 방법
JP5224667B2 (ja) * 2005-09-29 2013-07-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007096089A (ja) * 2005-09-29 2007-04-12 Renesas Technology Corp 露光装置

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