JP4455020B2 - 露光方法 - Google Patents
露光方法 Download PDFInfo
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- JP4455020B2 JP4455020B2 JP2003386703A JP2003386703A JP4455020B2 JP 4455020 B2 JP4455020 B2 JP 4455020B2 JP 2003386703 A JP2003386703 A JP 2003386703A JP 2003386703 A JP2003386703 A JP 2003386703A JP 4455020 B2 JP4455020 B2 JP 4455020B2
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Description
M. Switkes and M. Rothschild SPIE Vol.4691 (2002) p. 459-465
以下、本発明の実施の形態1に係る露光方法について説明する。まず、図1に示すように、被加工基体であるSi基板11上に反射防止膜12を形成し、反射防止膜12上にレジスト膜13を形成してプリベークを行い、レジスト膜13上に上層膜14を形成する。
本発明の実施の形態2に係る露光方法では、実施の形態1に係る露光方法において上層膜及びレジスト膜を形成する際に、レジスト膜中へ取り込まれる露光光の全エネルギーに対するs偏光分の比率が大きくなるように、上層膜の屈折率及び膜厚、及びレジスト膜の膜厚を調整する。このように、解像性に優れるs偏光の比率を大きくすることで、偏光現象による解像性の劣化を防ぐことができる。以下、上層膜の屈折率及び膜厚を調整する方法について具体的に説明する。前提として、図1に示すように、レジスト膜13上に設けられた上層膜14に、入射光を液侵物質15中から斜め入射させる場合を考える。
12 反射防止膜
13 レジスト膜
14 上層膜
15 液侵物質
Claims (3)
- 被加工基体上にレジスト膜を形成する工程と、
前記レジスト膜上に疎水性の上層膜を形成する工程と、
露光機と前記上層膜との間に液侵物質を充填する工程と、
前記露光機から前記液侵物質及び前記上層膜を通して前記レジスト膜に露光光を照射する工程とを有し、
前記レジスト膜中へ取り込まれる前記露光光の全エネルギーに対するs偏光分の比率が大きくなるように、前記上層膜の屈折率及び膜厚、及び前記レジスト膜の膜厚を調整することを特徴とする露光方法。 - 入射光が前記上層膜へ斜め入射する場合の多重反射計算を行って、前記レジスト膜中へ取り込まれる前記入射光の全エネルギーに対するs偏光分の比率について、前記上層膜の屈折率及び膜厚、及び前記レジスト膜の膜厚との関係を計算する工程と、
この計算結果から、前記レジスト膜中へ取り込まれる前記入射光の全エネルギーに対するs偏光分の比率が大きくなるような前記上層膜の適正屈折率及び適正膜厚、及びレジスト膜の適正膜厚を求める工程とを更に有し、
前記レジスト膜を形成する際に、その膜厚を前記レジスト膜の前記適正膜厚とし、
前記上層膜を形成する際に、その屈折率及び膜厚を前記上層膜の適正屈折率及び適正膜厚にすることを特徴とする請求項1記載の露光方法。 - 前記上層膜の適正屈折率及び適正膜厚、及びレジスト膜の適正膜厚を求める際に、前記レジスト膜中へ取り込まれる前記入射光の全エネルギーに対するs偏光分の比率が0.52以上になるような値を求めることを特徴とする請求項2記載の露光方法。
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JP2003386703A JP4455020B2 (ja) | 2003-11-17 | 2003-11-17 | 露光方法 |
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JP2003386703A JP4455020B2 (ja) | 2003-11-17 | 2003-11-17 | 露光方法 |
Publications (2)
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JP2005150450A JP2005150450A (ja) | 2005-06-09 |
JP4455020B2 true JP4455020B2 (ja) | 2010-04-21 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4622340B2 (ja) * | 2004-03-04 | 2011-02-02 | 株式会社ニコン | 露光装置、デバイス製造方法 |
JP4522329B2 (ja) * | 2005-06-24 | 2010-08-11 | 株式会社Sokudo | 基板処理装置 |
JP2007036122A (ja) * | 2005-07-29 | 2007-02-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2007049026A (ja) * | 2005-08-11 | 2007-02-22 | Renesas Technology Corp | 微細パターンの形成方法およびその形成材料 |
KR100740611B1 (ko) | 2005-10-12 | 2007-07-18 | 삼성전자주식회사 | 탑 코팅 막용 고분자, 탑 코팅 용액 조성물 및 이를 이용한이머젼 리소그라피 공정 |
KR101306150B1 (ko) | 2005-10-24 | 2013-09-10 | 삼성전자주식회사 | 탑 코팅 막용 고분자, 탑 코팅 용액 조성물 및 이를 이용한 이머젼 리소그라피 공정 |
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