JP5214125B2 - 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 - Google Patents

配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 Download PDF

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Publication number
JP5214125B2
JP5214125B2 JP2006246176A JP2006246176A JP5214125B2 JP 5214125 B2 JP5214125 B2 JP 5214125B2 JP 2006246176 A JP2006246176 A JP 2006246176A JP 2006246176 A JP2006246176 A JP 2006246176A JP 5214125 B2 JP5214125 B2 JP 5214125B2
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Prior art keywords
copper
gate
wiring
thin film
film
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JP2006246176A
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Japanese (ja)
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JP2008066680A5 (enExample
JP2008066680A (ja
Inventor
制 勳 李
敞 午 ▼鄭▲
範 錫 趙
良 浩 ▼襄▲
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2006246176A 2006-09-11 2006-09-11 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 Expired - Fee Related JP5214125B2 (ja)

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JP2006246176A JP5214125B2 (ja) 2006-09-11 2006-09-11 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法

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JP2006246176A JP5214125B2 (ja) 2006-09-11 2006-09-11 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法

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JP2008066680A JP2008066680A (ja) 2008-03-21
JP2008066680A5 JP2008066680A5 (enExample) 2009-10-15
JP5214125B2 true JP5214125B2 (ja) 2013-06-19

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3227353B2 (ja) * 1995-07-13 2001-11-12 東芝セラミックス株式会社 炭化珪素膜被覆部材及びその製造方法
KR20070049278A (ko) * 2005-11-08 2007-05-11 삼성전자주식회사 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법
JP5412026B2 (ja) * 2006-09-11 2014-02-12 三星ディスプレイ株式會社 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法
US8105937B2 (en) * 2008-08-13 2012-01-31 International Business Machines Corporation Conformal adhesion promoter liner for metal interconnects
US9715845B2 (en) * 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
KR101940962B1 (ko) * 2009-10-09 2019-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011104943A1 (ja) 2010-02-24 2011-09-01 シャープ株式会社 液晶表示パネル及び液晶表示装置
JP2011258871A (ja) * 2010-06-11 2011-12-22 Fujitsu Ltd 回路基板及びその製造方法
KR101975263B1 (ko) * 2012-02-07 2019-05-08 삼성디스플레이 주식회사 박막트랜지스터 표시판과 이를 제조하는 방법
US9166054B2 (en) 2012-04-13 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2606548B2 (ja) * 1993-04-27 1997-05-07 日本電気株式会社 Ｃｕ配線およびその形成方法
JPH10133597A (ja) * 1996-07-26 1998-05-22 Canon Inc 配線基板、該配線基板の製造方法、該配線基板を備えた液晶素子及び該液晶素子の製造方法
US6111619A (en) * 1999-05-27 2000-08-29 Sharp Laboratories Of America, Inc. Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array
TW451447B (en) * 1999-12-31 2001-08-21 Samsung Electronics Co Ltd Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
KR20070049278A (ko) * 2005-11-08 2007-05-11 삼성전자주식회사 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법
JP5412026B2 (ja) * 2006-09-11 2014-02-12 三星ディスプレイ株式會社 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法

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