JP5214121B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5214121B2
JP5214121B2 JP2006214700A JP2006214700A JP5214121B2 JP 5214121 B2 JP5214121 B2 JP 5214121B2 JP 2006214700 A JP2006214700 A JP 2006214700A JP 2006214700 A JP2006214700 A JP 2006214700A JP 5214121 B2 JP5214121 B2 JP 5214121B2
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
emitting device
substrate body
wiring pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006214700A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008041953A5 (https=
JP2008041953A (ja
Inventor
晶紀 白石
裕一 田口
啓 村山
昌宏 春原
光敏 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2006214700A priority Critical patent/JP5214121B2/ja
Priority to US11/882,812 priority patent/US7816690B2/en
Priority to TW096128945A priority patent/TW200810160A/zh
Priority to EP07015539.5A priority patent/EP1887635B1/en
Publication of JP2008041953A publication Critical patent/JP2008041953A/ja
Publication of JP2008041953A5 publication Critical patent/JP2008041953A5/ja
Application granted granted Critical
Publication of JP5214121B2 publication Critical patent/JP5214121B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Led Device Packages (AREA)
JP2006214700A 2006-08-07 2006-08-07 発光装置 Active JP5214121B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006214700A JP5214121B2 (ja) 2006-08-07 2006-08-07 発光装置
US11/882,812 US7816690B2 (en) 2006-08-07 2007-08-06 Light-emitting device
TW096128945A TW200810160A (en) 2006-08-07 2007-08-07 Light-emitting device
EP07015539.5A EP1887635B1 (en) 2006-08-07 2007-08-07 Light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006214700A JP5214121B2 (ja) 2006-08-07 2006-08-07 発光装置

Publications (3)

Publication Number Publication Date
JP2008041953A JP2008041953A (ja) 2008-02-21
JP2008041953A5 JP2008041953A5 (https=) 2009-08-13
JP5214121B2 true JP5214121B2 (ja) 2013-06-19

Family

ID=38657872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006214700A Active JP5214121B2 (ja) 2006-08-07 2006-08-07 発光装置

Country Status (4)

Country Link
US (1) US7816690B2 (https=)
EP (1) EP1887635B1 (https=)
JP (1) JP5214121B2 (https=)
TW (1) TW200810160A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI353657B (en) * 2007-09-28 2011-12-01 Ind Tech Res Inst An island submount
CN102881812B (zh) * 2011-07-15 2015-03-25 赛恩倍吉科技顾问（深圳）有限公司 发光二极管封装结构的制造方法
JP6006525B2 (ja) * 2012-05-15 2016-10-12 スタンレー電気株式会社 半導体発光装置及びそれを用いた灯具
KR101978941B1 (ko) * 2013-01-28 2019-05-15 엘지이노텍 주식회사 발광소자 패키지
KR102153041B1 (ko) * 2013-12-04 2020-09-07 삼성전자주식회사 반도체소자 패키지 및 그 제조방법
WO2020250667A1 (ja) * 2019-06-11 2020-12-17 京セラ株式会社 発光素子基板および表示装置
JP7311362B2 (ja) * 2019-08-29 2023-07-19 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54389B2 (https=) * 1975-05-06 1979-01-10
JPH0513820A (ja) * 1991-07-02 1993-01-22 Omron Corp 半導体装置
DE4242842C2 (de) * 1992-02-14 1999-11-04 Sharp Kk Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
DE10122705B4 (de) * 2000-05-11 2012-07-26 Mitutoyo Corp. Einrichtung mit funktionalem Bauelement und Verfahren zu seiner Herstellung
DE10163799B4 (de) * 2000-12-28 2006-11-23 Matsushita Electric Works, Ltd., Kadoma Halbleiterchip-Aufbausubstrat und Verfahren zum Herstellen eines solchen Aufbausubstrates
DE10105802A1 (de) * 2001-02-07 2002-08-08 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Reflektorbehaftetes Halbleiterbauelement
JP2003031895A (ja) * 2001-07-13 2003-01-31 Sharp Corp 半導体発光装置およびその製造方法
JP4045781B2 (ja) * 2001-08-28 2008-02-13 松下電工株式会社 発光装置
DE10148227B4 (de) * 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
CN100338786C (zh) * 2002-06-19 2007-09-19 三垦电气株式会社 半导体发光装置及其制法和半导体发光装置用反射器
JP3993475B2 (ja) * 2002-06-20 2007-10-17 ローム株式会社 Ｌｅｄチップの実装構造、およびこれを備えた画像読み取り装置
CN102290409B (zh) * 2003-04-01 2014-01-15 夏普株式会社 发光装置
JP4192742B2 (ja) * 2003-09-30 2008-12-10 豊田合成株式会社 発光装置
JP2005136224A (ja) * 2003-10-30 2005-05-26 Asahi Kasei Electronics Co Ltd 発光ダイオード照明モジュール
TWI227570B (en) * 2003-12-11 2005-02-01 South Epitaxy Corp Light-emitting diode packaging structure
JP2005203448A (ja) 2004-01-13 2005-07-28 Toyoda Gosei Co Ltd 発光装置
JP4614679B2 (ja) 2004-01-29 2011-01-19 京セラ株式会社 発光装置およびその製造方法ならびに照明装置
JP2006135276A (ja) * 2004-10-04 2006-05-25 Hitachi Ltd 半導体発光素子搭載用パッケージ及びその製造方法
JP2006324324A (ja) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd 発光装置、発光装置の製造方法および窒化物半導体基板

Also Published As

Publication number Publication date
EP1887635A2 (en) 2008-02-13
JP2008041953A (ja) 2008-02-21
US7816690B2 (en) 2010-10-19
US20080030139A1 (en) 2008-02-07
EP1887635B1 (en) 2017-05-10
TW200810160A (en) 2008-02-16
EP1887635A3 (en) 2012-12-26

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