JP5213741B2 - 基板製造方法 - Google Patents

基板製造方法 Download PDF

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Publication number
JP5213741B2
JP5213741B2 JP2009021411A JP2009021411A JP5213741B2 JP 5213741 B2 JP5213741 B2 JP 5213741B2 JP 2009021411 A JP2009021411 A JP 2009021411A JP 2009021411 A JP2009021411 A JP 2009021411A JP 5213741 B2 JP5213741 B2 JP 5213741B2
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JP
Japan
Prior art keywords
substrate
chamber
ashing process
plasma ashing
pressure
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2009021411A
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English (en)
Japanese (ja)
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JP2009194380A (ja
Inventor
リー，ヨンチョル
バイク，インヒェック
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ピーエスケイ インコーポレーテッド
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2009021411A 2008-02-15 2009-02-02 基板製造方法 Expired - Fee Related JP5213741B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0013996 2008-02-15
KR1020080013996A KR101049939B1 (ko) 2008-02-15 2008-02-15 기판 제조 방법

Publications (2)

Publication Number Publication Date
JP2009194380A JP2009194380A (ja) 2009-08-27
JP5213741B2 true JP5213741B2 (ja) 2013-06-19

Family

ID=41076075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009021411A Expired - Fee Related JP5213741B2 (ja) 2008-02-15 2009-02-02 基板製造方法

Country Status (3)

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JP (1) JP5213741B2 (zh)
KR (1) KR101049939B1 (zh)
TW (1) TWI400583B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484663B (zh) 2009-08-25 2014-12-24 联想创新有限公司（香港) 呼叫者信息显示方法、设备和蜂窝电话
JP6438649B2 (ja) * 2013-12-10 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR101994895B1 (ko) 2016-09-26 2019-07-01 에이피시스템 주식회사 기판 처리 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103119A (ja) * 1990-08-23 1992-04-06 Nec Corp レジスト除去装置
JPH06177088A (ja) * 1992-08-31 1994-06-24 Sony Corp アッシング方法及びアッシング装置
JPH0878372A (ja) * 1994-09-01 1996-03-22 Hitachi Ltd 有機物除去方法及びその装置
JP3728165B2 (ja) * 1999-01-28 2005-12-21 キヤノン株式会社 イオン注入されたホトレジストの残渣の処理方法及び半導体装置の製造方法
KR100379210B1 (ko) * 2002-04-19 2003-04-08 피.에스.케이.테크(주) 반도체 웨이퍼 애싱 방법
KR20050071150A (ko) * 2003-12-31 2005-07-07 동부아남반도체 주식회사 컬러 포토레지스트 제거 방법
KR20070007172A (ko) * 2004-03-31 2007-01-12 다다히로 오미 회로 기판, 회로 기판의 제조방법 및 회로 기판을 갖춘표시 장치
JP4587837B2 (ja) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及びグレートーンマスク
KR100710705B1 (ko) * 2005-11-22 2007-04-23 피에스케이 주식회사 기판 애싱 방법
US7749400B2 (en) * 2005-12-16 2010-07-06 Jason Plumhoff Method for etching photolithographic substrates

Also Published As

Publication number Publication date
KR101049939B1 (ko) 2011-07-15
KR20090088608A (ko) 2009-08-20
TW200943003A (en) 2009-10-16
TWI400583B (zh) 2013-07-01
JP2009194380A (ja) 2009-08-27

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