TW200943003A - Method of manufacturing the substrate - Google Patents

Method of manufacturing the substrate

Info

Publication number
TW200943003A
TW200943003A TW098104014A TW98104014A TW200943003A TW 200943003 A TW200943003 A TW 200943003A TW 098104014 A TW098104014 A TW 098104014A TW 98104014 A TW98104014 A TW 98104014A TW 200943003 A TW200943003 A TW 200943003A
Authority
TW
Taiwan
Prior art keywords
substrate
manufacturing
plasma ashing
ashing treatment
photoresist
Prior art date
Application number
TW098104014A
Other languages
Chinese (zh)
Other versions
TWI400583B (en
Inventor
In-Hyeck Baik
Young-Chul Lee
Original Assignee
Psk Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Psk Inc filed Critical Psk Inc
Publication of TW200943003A publication Critical patent/TW200943003A/en
Application granted granted Critical
Publication of TWI400583B publication Critical patent/TWI400583B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A method of manufacturing a semiconductor substrate is provided. The substrate manufacturing method performs a primary plasma ashing treatment after first heating the substrate on which a photoresist is formed. Then, after decreasing the substrate temperature under the state of atmospheric pressure, a secondary plasma ashing treatment of the substrate is once again performed. This allows chemical bonding changes of the photoresist and the occurrence of popping and the residue to be decreased so as to enhance the yield of products since the temperature of the substrate is decreased for a while under the state of atmospheric pressure during the plasma ashing treatment process.
TW098104014A 2008-02-15 2009-02-09 Substrate manufacturing method TWI400583B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080013996A KR101049939B1 (en) 2008-02-15 2008-02-15 Substrate manufacturing method

Publications (2)

Publication Number Publication Date
TW200943003A true TW200943003A (en) 2009-10-16
TWI400583B TWI400583B (en) 2013-07-01

Family

ID=41076075

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098104014A TWI400583B (en) 2008-02-15 2009-02-09 Substrate manufacturing method

Country Status (3)

Country Link
JP (1) JP5213741B2 (en)
KR (1) KR101049939B1 (en)
TW (1) TWI400583B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8825028B2 (en) 2009-08-25 2014-09-02 Nec Corporation Caller information displaying method, cellular phone, and non-transitory computer readable medium storing program
JP6438649B2 (en) * 2013-12-10 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
KR101994895B1 (en) 2016-09-26 2019-07-01 에이피시스템 주식회사 Apparatus for processing substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103119A (en) * 1990-08-23 1992-04-06 Nec Corp Resist removing device
JPH06177088A (en) * 1992-08-31 1994-06-24 Sony Corp Method and apparatu for ashing
JPH0878372A (en) * 1994-09-01 1996-03-22 Hitachi Ltd Organic matter removing method and its apparatus
JP3728165B2 (en) * 1999-01-28 2005-12-21 キヤノン株式会社 Ion-implanted photoresist residue processing method and semiconductor device manufacturing method
KR100379210B1 (en) * 2002-04-19 2003-04-08 피.에스.케이.테크(주) Method for Semiconductor Wafer Ashing
KR20050071150A (en) * 2003-12-31 2005-07-07 동부아남반도체 주식회사 Method for removing color photoresist
US20070209200A1 (en) * 2004-03-31 2007-09-13 Tadahiro Ohmi Circuit Board, Method Of Manufacturing Circuit Board, And Display Device Having Circuit Board
JP4587837B2 (en) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 Gray tone mask manufacturing method and gray tone mask
KR100710705B1 (en) * 2005-11-22 2007-04-23 피에스케이 주식회사 Method for ashing substrates
US7749400B2 (en) * 2005-12-16 2010-07-06 Jason Plumhoff Method for etching photolithographic substrates

Also Published As

Publication number Publication date
JP5213741B2 (en) 2013-06-19
KR20090088608A (en) 2009-08-20
KR101049939B1 (en) 2011-07-15
TWI400583B (en) 2013-07-01
JP2009194380A (en) 2009-08-27

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees