JP5212417B2 - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP5212417B2
JP5212417B2 JP2010091291A JP2010091291A JP5212417B2 JP 5212417 B2 JP5212417 B2 JP 5212417B2 JP 2010091291 A JP2010091291 A JP 2010091291A JP 2010091291 A JP2010091291 A JP 2010091291A JP 5212417 B2 JP5212417 B2 JP 5212417B2
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Prior art keywords
insulating substrate
dielectric constant
solder
low dielectric
semiconductor chip
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JP2010091291A
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English (en)
Japanese (ja)
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JP2011222805A5 (OSRAM
JP2011222805A (ja
Inventor
安人 川口
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2010091291A priority Critical patent/JP5212417B2/ja
Priority to US12/910,231 priority patent/US8558361B2/en
Priority to DE102011005690.4A priority patent/DE102011005690B4/de
Priority to CN2011100736492A priority patent/CN102214622B/zh
Publication of JP2011222805A publication Critical patent/JP2011222805A/ja
Publication of JP2011222805A5 publication Critical patent/JP2011222805A5/ja
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Publication of JP5212417B2 publication Critical patent/JP5212417B2/ja
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2010091291A 2010-04-12 2010-04-12 パワー半導体モジュール Active JP5212417B2 (ja)

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US12/910,231 US8558361B2 (en) 2010-04-12 2010-10-22 Power semiconductor module
DE102011005690.4A DE102011005690B4 (de) 2010-04-12 2011-03-17 Leistungshalbleitermodul
CN2011100736492A CN102214622B (zh) 2010-04-12 2011-03-25 功率半导体模块

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KR101983420B1 (ko) * 2011-12-12 2019-05-29 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판, 히트 싱크가 형성된 파워 모듈용 기판, 파워 모듈, 플럭스 성분 침입 방지층 형성용 페이스트 및 접합체의 접합 방법
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JP6138277B2 (ja) * 2013-12-17 2017-05-31 三菱電機株式会社 パワー半導体モジュール
US10422681B2 (en) 2014-05-30 2019-09-24 Eltek S.P.A. Sensor for detecting the level of a medium
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BR112017005014B1 (pt) 2014-09-15 2021-03-16 Eltek S.P.A. sensor para detectar o nível de um meio contido em um recipiente, método para controlar um sensor para detectar o nível de um meio contido em um recipiente e recipiente
JP6642719B2 (ja) * 2016-08-10 2020-02-12 三菱電機株式会社 半導体装置
CN109743882B (zh) * 2016-09-21 2022-12-30 三菱电机株式会社 半导体装置以及电力变换装置
JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
JP6891075B2 (ja) * 2017-08-30 2021-06-18 株式会社 日立パワーデバイス パワー半導体モジュール
JP6826665B2 (ja) * 2018-12-27 2021-02-03 三菱電機株式会社 半導体装置、半導体装置の製造方法及び電力変換装置

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CN102214622A (zh) 2011-10-12
JP2011222805A (ja) 2011-11-04
US8558361B2 (en) 2013-10-15
US20110249407A1 (en) 2011-10-13
DE102011005690B4 (de) 2021-10-28
DE102011005690A1 (de) 2011-10-13

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