JP2011222805A5 - - Google Patents

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Publication number
JP2011222805A5
JP2011222805A5 JP2010091291A JP2010091291A JP2011222805A5 JP 2011222805 A5 JP2011222805 A5 JP 2011222805A5 JP 2010091291 A JP2010091291 A JP 2010091291A JP 2010091291 A JP2010091291 A JP 2010091291A JP 2011222805 A5 JP2011222805 A5 JP 2011222805A5
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JP
Japan
Prior art keywords
solder
covers
side surfaces
dielectric constant
low dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010091291A
Other languages
English (en)
Japanese (ja)
Other versions
JP5212417B2 (ja
JP2011222805A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010091291A priority Critical patent/JP5212417B2/ja
Priority claimed from JP2010091291A external-priority patent/JP5212417B2/ja
Priority to US12/910,231 priority patent/US8558361B2/en
Priority to DE102011005690.4A priority patent/DE102011005690B4/de
Priority to CN2011100736492A priority patent/CN102214622B/zh
Publication of JP2011222805A publication Critical patent/JP2011222805A/ja
Publication of JP2011222805A5 publication Critical patent/JP2011222805A5/ja
Application granted granted Critical
Publication of JP5212417B2 publication Critical patent/JP5212417B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010091291A 2010-04-12 2010-04-12 パワー半導体モジュール Active JP5212417B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010091291A JP5212417B2 (ja) 2010-04-12 2010-04-12 パワー半導体モジュール
US12/910,231 US8558361B2 (en) 2010-04-12 2010-10-22 Power semiconductor module
DE102011005690.4A DE102011005690B4 (de) 2010-04-12 2011-03-17 Leistungshalbleitermodul
CN2011100736492A CN102214622B (zh) 2010-04-12 2011-03-25 功率半导体模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010091291A JP5212417B2 (ja) 2010-04-12 2010-04-12 パワー半導体モジュール

Publications (3)

Publication Number Publication Date
JP2011222805A JP2011222805A (ja) 2011-11-04
JP2011222805A5 true JP2011222805A5 (OSRAM) 2012-07-26
JP5212417B2 JP5212417B2 (ja) 2013-06-19

Family

ID=44658269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010091291A Active JP5212417B2 (ja) 2010-04-12 2010-04-12 パワー半導体モジュール

Country Status (4)

Country Link
US (1) US8558361B2 (OSRAM)
JP (1) JP5212417B2 (OSRAM)
CN (1) CN102214622B (OSRAM)
DE (1) DE102011005690B4 (OSRAM)

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Publication number Priority date Publication date Assignee Title
JP5328827B2 (ja) * 2010-05-28 2013-10-30 三菱電機株式会社 パワーモジュール構造、その構造を有するパワーモジュール、およびその構造の製造方法
WO2013089099A1 (ja) * 2011-12-12 2013-06-20 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、フラックス成分侵入防止層形成用ペーストおよび接合体の接合方法
US8847328B1 (en) * 2013-03-08 2014-09-30 Ixys Corporation Module and assembly with dual DC-links for three-level NPC applications
WO2015092866A1 (ja) * 2013-12-17 2015-06-25 三菱電機株式会社 パワー半導体モジュール
US10422681B2 (en) 2014-05-30 2019-09-24 Eltek S.P.A. Sensor for detecting the level of a medium
WO2016042456A2 (en) 2014-09-15 2016-03-24 Eltek S.P.A. Sensor for detecting the level of a medium
US10533887B2 (en) 2014-09-15 2020-01-14 Eltek S.P.A. Sensor for detecting the level of a medium
DE112016007133B4 (de) * 2016-08-10 2021-08-12 Mitsubishi Electric Corporation Halbleitervorrichtung
US10727145B2 (en) * 2016-09-21 2020-07-28 Mitsubishi Electric Corporation Semiconducter device with filler to suppress generation of air bubbles and electric power converter
JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
JP6891075B2 (ja) * 2017-08-30 2021-06-18 株式会社 日立パワーデバイス パワー半導体モジュール
JP6826665B2 (ja) * 2018-12-27 2021-02-03 三菱電機株式会社 半導体装置、半導体装置の製造方法及び電力変換装置

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Publication number Priority date Publication date Assignee Title
US4855872A (en) * 1987-08-13 1989-08-08 General Electric Company Leadless ceramic chip carrier printed wiring board adapter
DE4341269A1 (de) 1993-12-03 1995-06-22 Bosch Gmbh Robert Gleichrichterdiode
EP0706221B8 (en) 1994-10-07 2008-09-03 Hitachi, Ltd. Semiconductor device comprising a plurality of semiconductor elements
JPH08125071A (ja) 1994-10-25 1996-05-17 Fuji Electric Co Ltd 半導体装置
JPH1187567A (ja) 1997-09-02 1999-03-30 Toshiba Corp 半導体装置
TW408453B (en) * 1997-12-08 2000-10-11 Toshiba Kk Package for semiconductor power device and method for assembling the same
JP3440824B2 (ja) * 1998-05-28 2003-08-25 株式会社日立製作所 半導体装置
US6139957A (en) 1998-08-28 2000-10-31 Commscope, Inc. Of North Carolina Conductor insulated with foamed fluoropolymer and method of making same
FR2800017B1 (fr) 1999-10-25 2002-01-11 Valeo Thermique Moteur Sa Dispositif de refroidissement pour un vehicule a moteur electrique alimente par une pile a combustible
JP2002076190A (ja) 2000-08-24 2002-03-15 Toshiba Corp 回路基板、半導体装置及びこれらの製造方法
JP2004200306A (ja) * 2002-12-17 2004-07-15 Hitachi Ltd 半導体モジュール
JP4253183B2 (ja) 2002-12-27 2009-04-08 三菱電機株式会社 電力用半導体モジュール
JP2005210006A (ja) * 2004-01-26 2005-08-04 Toshiba Corp 半導体装置
JP4319591B2 (ja) * 2004-07-15 2009-08-26 株式会社日立製作所 半導体パワーモジュール
JP2006318980A (ja) * 2005-05-10 2006-11-24 Toyota Industries Corp 半導体装置および半導体装置の製造方法
JP4609296B2 (ja) * 2005-12-05 2011-01-12 株式会社日立製作所 高温半田及び高温半田ペースト材、及びそれを用いたパワー半導体装置
JP4525636B2 (ja) * 2006-06-09 2010-08-18 株式会社日立製作所 パワーモジュール
US8004075B2 (en) 2006-04-25 2011-08-23 Hitachi, Ltd. Semiconductor power module including epoxy resin coating
JP4735446B2 (ja) 2006-07-04 2011-07-27 三菱電機株式会社 半導体装置
JP5168866B2 (ja) 2006-09-28 2013-03-27 三菱電機株式会社 パワー半導体モジュール
JP4972503B2 (ja) * 2007-09-11 2012-07-11 株式会社日立製作所 半導体パワーモジュール
JP2009070869A (ja) 2007-09-11 2009-04-02 Panasonic Corp 半導体発光装置

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