JP5207594B2 - イメージセンサ - Google Patents
イメージセンサ Download PDFInfo
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- JP5207594B2 JP5207594B2 JP2006086234A JP2006086234A JP5207594B2 JP 5207594 B2 JP5207594 B2 JP 5207594B2 JP 2006086234 A JP2006086234 A JP 2006086234A JP 2006086234 A JP2006086234 A JP 2006086234A JP 5207594 B2 JP5207594 B2 JP 5207594B2
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- 239000000758 substrate Substances 0.000 claims description 81
- 238000002955 isolation Methods 0.000 claims description 41
- 238000005468 ion implantation Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 51
- 238000004519 manufacturing process Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 16
- 230000000875 corresponding effect Effects 0.000 description 13
- 238000000926 separation method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
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- 239000012535 impurity Substances 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 230000002596 correlated effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
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- 238000012546 transfer Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005570 vertical transmission Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
<実験例1>
10 画素配列部
20 タイミングジェネレータ
30 ロウデコーダ
40 ロウドライバ
50 相関二重サンプラ
60 アナログデジタルコンバータ
70 ラッチ部
80 カラムデコーダ
100 単位画素
101 下部基板領域
102 ディープウェル
103 上部基板領域
104 第1分離ウェル
106 素子分離領域
108 第2分離ウェル
110 光電変換部
110R レッド光電変換部
110G グリーン光電変換部
110B ブルー光電変換部
120 電荷検出部
130 電荷伝送部
140 リセット部
150 増幅部
160 選択部
Claims (10)
- 第1導電型の半導体基板と、
前記基板の所定深さに形成されて前記半導体基板を前記第1導電型の上部基板領域及び下部基板領域に分離する第2導電型のディープウェルと、
入射光に対応して電荷を蓄積する複数の単位画素と、を含み、
前記各単位画素は、前記各単位画素別に分離された第1導電型のイオン注入領域をそれぞれ含み、
前記複数の単位画素のうち少なくとも一つの単位画素は、前記第1導電型のイオン注入領域下部に位置して前記第1導電型のイオン注入領域外側に延長されて隣接画素の前記第1導電型のイオン注入領域と電気的に分離された第1導電型の上部基板領域を含み、
前記第1導電型のイオン注入領域は第2導電型の第1分離ウェルにより画定され、前記第1分離ウェルは、前記イオン注入領域と少なくとも同一の深さであるかより深い深さにまで延伸され、前記少なくとも一つの単位画素に含まれる前記第1導電型の上部基板領域は、他の単位画素に含まれる前記第1導電型の上部基板領域よりも広い
ことを特徴とするイメージセンサ。 - 前記少なくとも一つの単位画素は前記複数の単位画素に入射する入射光のうち最も長波長の入射光に対応して電荷を蓄積する
ことを特徴とする請求項1に記載のイメージセンサ。 - 前記第1導電型の上部基板領域は第2導電型の前記第1分離ウェル、前記第1導電型のイオン注入領域の下部に形成される第2分離ウェル、前記第1導電型のイオン注入領域及び前記ディープウェルにより画定される
ことを特徴とする請求項1または2に記載のイメージセンサ。 - 前記複数の単位画素は、レッド領域の波長、グリーン領域の波長及びブルー領域の波長の入射光に対応して電荷を蓄積するレッド単位画素、グリーン単位画素及びブルー単位画素を含み、前記少なくとも一つの単位画素はレッド単位画素である
ことを特徴とする請求項1から3の何れか一項に記載のイメージセンサ。 - 前記グリーン及びブルー単位画素は前記第1導電型のイオン注入領域を含む
ことを特徴とする請求項4に記載のイメージセンサ。 - 前記レッド単位画素に含まれる前記第1導電型の上部基板領域の面積が、前記グリーン及びブルー単位画素に含まれる前記第1導電型の上部基板領域の面積より広い
ことを特徴とする請求項4または5に記載のイメージセンサ。 - 前記グリーン単位画素に含まれる前記第1導電型の上部基板領域の面積は、前記ブルー単位画素に含まれる前記第1導電型の上部基板領域の面積より広い
ことを特徴とする請求項4から6の何れか一項に記載のイメージセンサ。 - 前記レッド、グリーン及びブルー単位画素はベイヤー型に配列された
ことを特徴とする請求項4から7の何れか一項に記載のイメージセンサ。 - 前記第1導電型のイオン注入領域は、前記第1導電型のイオン注入領域の下部に形成される第2導電型の第2分離ウェルにより前記各単位画素別に分離される
ことを特徴とする請求項1から8の何れか一項に記載のイメージセンサ。 - 前記第1導電型の上部基板領域は少なくとも一部が前記第1導電型のイオン注入領域の下部に形成される第2分離ウェルとオーバーラップする
ことを特徴とする請求項1から9の何れか一項に記載のイメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0025482 | 2005-03-28 | ||
KR1020050025482A KR100642760B1 (ko) | 2005-03-28 | 2005-03-28 | 이미지 센서 및 그 제조 방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006279048A JP2006279048A (ja) | 2006-10-12 |
JP2006279048A5 JP2006279048A5 (ja) | 2009-04-23 |
JP5207594B2 true JP5207594B2 (ja) | 2013-06-12 |
Family
ID=37034357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006086234A Active JP5207594B2 (ja) | 2005-03-28 | 2006-03-27 | イメージセンサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US7579637B2 (ja) |
JP (1) | JP5207594B2 (ja) |
KR (1) | KR100642760B1 (ja) |
CN (1) | CN100563016C (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100821469B1 (ko) | 2006-10-13 | 2008-04-11 | 매그나칩 반도체 유한회사 | 개선된 컬러 크로스토크를 갖는 소형 cmos 이미지 센서및 그 제조 방법 |
US20080211050A1 (en) * | 2007-03-01 | 2008-09-04 | Hiok Nam Tay | Image sensor with inter-pixel isolation |
US20070164196A1 (en) * | 2007-03-09 | 2007-07-19 | Tay Hiok N | Image sensor with pixel wiring to reflect light |
KR100936105B1 (ko) * | 2007-12-28 | 2010-01-11 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
JP5793688B2 (ja) * | 2008-07-11 | 2015-10-14 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
KR101550435B1 (ko) * | 2009-01-14 | 2015-09-04 | 삼성전자주식회사 | 후면 수광 이미지 센서 및 그 제조 방법 |
JP2010245100A (ja) * | 2009-04-01 | 2010-10-28 | Nikon Corp | 固体撮像素子 |
JP5679653B2 (ja) | 2009-12-09 | 2015-03-04 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
CN102468310B (zh) * | 2010-11-17 | 2014-08-20 | 联咏科技股份有限公司 | 影像传感器 |
JP5606961B2 (ja) | 2011-02-25 | 2014-10-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2016187018A (ja) | 2015-03-27 | 2016-10-27 | キヤノン株式会社 | 光電変換装置およびカメラ |
US9865642B2 (en) * | 2015-06-05 | 2018-01-09 | Omnivision Technologies, Inc. | RGB-IR photosensor with nonuniform buried P-well depth profile for reduced cross talk and enhanced infrared sensitivity |
TWI767411B (zh) | 2015-07-24 | 2022-06-11 | 光程研創股份有限公司 | 半導體結構 |
US10644187B2 (en) | 2015-07-24 | 2020-05-05 | Artilux, Inc. | Multi-wafer based light absorption apparatus and applications thereof |
KR102531355B1 (ko) * | 2018-03-20 | 2023-05-10 | 삼성전자주식회사 | 이미지 센서 |
US11107853B2 (en) * | 2018-10-19 | 2021-08-31 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus |
JP7305343B2 (ja) * | 2018-12-18 | 2023-07-10 | キヤノン株式会社 | 光電変換素子、光電変換素子の製造方法 |
CN110581190B (zh) * | 2019-08-23 | 2021-11-02 | 北京大学 | 一种适应亚微米像素的utbb光电探测器、阵列和方法 |
CN111182247B (zh) * | 2020-01-06 | 2022-06-21 | Oppo广东移动通信有限公司 | 一种像素结构、图像传感器及终端 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0186195B1 (ko) * | 1995-12-11 | 1999-05-01 | 문정환 | 컬러선형 전하결합소자 및 이의 구동방법 |
JPH11289076A (ja) | 1998-04-02 | 1999-10-19 | Sony Corp | 固体撮像素子 |
JP3457551B2 (ja) * | 1998-11-09 | 2003-10-20 | 株式会社東芝 | 固体撮像装置 |
JP4604296B2 (ja) * | 1999-02-09 | 2011-01-05 | ソニー株式会社 | 固体撮像装置及びその製造方法 |
KR20010061078A (ko) | 1999-12-28 | 2001-07-07 | 박종섭 | 정확한 컬러이미지 구현을 위한 이미지센서 제조 방법 |
JP2001291858A (ja) * | 2000-04-04 | 2001-10-19 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2003298038A (ja) * | 2002-04-05 | 2003-10-17 | Canon Inc | 光電変換素子及びそれを用いた固体撮像装置 |
JP3840203B2 (ja) | 2002-06-27 | 2006-11-01 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置を用いたカメラシステム |
JP4264248B2 (ja) * | 2002-11-19 | 2009-05-13 | 富士フイルム株式会社 | カラー固体撮像装置 |
KR20040065332A (ko) | 2003-01-13 | 2004-07-22 | 주식회사 하이닉스반도체 | 이온주입영역을 소자분리막으로 사용한 시모스 이미지센서및 그 제조방법 |
US6812539B1 (en) * | 2003-04-10 | 2004-11-02 | Micron Technology, Inc. | Imager light shield |
KR100690884B1 (ko) * | 2005-04-28 | 2007-03-09 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
-
2005
- 2005-03-28 KR KR1020050025482A patent/KR100642760B1/ko active IP Right Grant
-
2006
- 2006-03-27 JP JP2006086234A patent/JP5207594B2/ja active Active
- 2006-03-27 US US11/389,728 patent/US7579637B2/en active Active
- 2006-03-28 CN CNB2006100714543A patent/CN100563016C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2006279048A (ja) | 2006-10-12 |
KR100642760B1 (ko) | 2006-11-10 |
US20060214249A1 (en) | 2006-09-28 |
CN1848443A (zh) | 2006-10-18 |
KR20060103660A (ko) | 2006-10-04 |
US7579637B2 (en) | 2009-08-25 |
CN100563016C (zh) | 2009-11-25 |
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