JP5202877B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5202877B2
JP5202877B2 JP2007152496A JP2007152496A JP5202877B2 JP 5202877 B2 JP5202877 B2 JP 5202877B2 JP 2007152496 A JP2007152496 A JP 2007152496A JP 2007152496 A JP2007152496 A JP 2007152496A JP 5202877 B2 JP5202877 B2 JP 5202877B2
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insulating film
semiconductor layer
compound semiconductor
manufacturing
electrode
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Japanese (ja)
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JP2008306027A5 (enrdf_load_stackoverflow
JP2008306027A (ja
Inventor
眞弘 西
均 生松
務 駒谷
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2007152496A priority Critical patent/JP5202877B2/ja
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Publication of JP2008306027A5 publication Critical patent/JP2008306027A5/ja
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  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2007152496A 2007-06-08 2007-06-08 半導体装置の製造方法 Active JP5202877B2 (ja)

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JP2007152496A JP5202877B2 (ja) 2007-06-08 2007-06-08 半導体装置の製造方法

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Application Number Priority Date Filing Date Title
JP2007152496A JP5202877B2 (ja) 2007-06-08 2007-06-08 半導体装置の製造方法

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JP2008306027A JP2008306027A (ja) 2008-12-18
JP2008306027A5 JP2008306027A5 (enrdf_load_stackoverflow) 2010-06-17
JP5202877B2 true JP5202877B2 (ja) 2013-06-05

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246227A (ja) 2008-03-31 2009-10-22 Toshiba Corp 半導体装置
JP5875752B2 (ja) * 2010-07-26 2016-03-02 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP5166576B2 (ja) * 2011-07-07 2013-03-21 シャープ株式会社 ＧａＮ系半導体素子の製造方法
JP5998446B2 (ja) * 2011-09-29 2016-09-28 富士通株式会社 化合物半導体装置及びその製造方法
JP6240460B2 (ja) * 2013-10-02 2017-11-29 トランスフォーム・ジャパン株式会社 電界効果型化合物半導体装置及びその製造方法
CN110120347B (zh) * 2018-02-05 2023-11-17 住友电气工业株式会社 形成场效应晶体管的方法
JP2019165056A (ja) * 2018-03-19 2019-09-26 住友電気工業株式会社 半導体装置の製造方法
JP7067336B2 (ja) * 2018-07-20 2022-05-16 住友電気工業株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08191147A (ja) * 1995-01-12 1996-07-23 Fujitsu Ltd 半導体装置及びその製造方法
JP3209169B2 (ja) * 1997-11-28 2001-09-17 日本電気株式会社 ゲート電極の形成方法
JP3853711B2 (ja) * 2002-07-24 2006-12-06 日本電信電話株式会社 半導体装置の製造方法

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JP2008306027A (ja) 2008-12-18

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