JP5184890B2 - 基板のための処理チャンバ - Google Patents

基板のための処理チャンバ Download PDF

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Publication number
JP5184890B2
JP5184890B2 JP2007547030A JP2007547030A JP5184890B2 JP 5184890 B2 JP5184890 B2 JP 5184890B2 JP 2007547030 A JP2007547030 A JP 2007547030A JP 2007547030 A JP2007547030 A JP 2007547030A JP 5184890 B2 JP5184890 B2 JP 5184890B2
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JP
Japan
Prior art keywords
chamber
gas
substrate
electrode
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2007547030A
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English (en)
Japanese (ja)
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JP2008525999A (ja
JP2008525999A5 (https=
Inventor
チェン‐テー カオ，
ジン‐ペイ（コニー） チョウ，
サルバドル， ピー． ウモトイ，
メイ チャン，
シャオシャン（ジョン） ユアン，
ユウ チャン，
シンリアン ルー，
シー‐エン ファン，
ウィリアム クアン，
ツウ，グォ−チュアン
デイヴィッド ティー． オア，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/137,200 external-priority patent/US20060130971A1/en
Priority claimed from US11/266,167 external-priority patent/US20060051966A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority claimed from PCT/US2005/046226 external-priority patent/WO2006069085A2/en
Publication of JP2008525999A publication Critical patent/JP2008525999A/ja
Publication of JP2008525999A5 publication Critical patent/JP2008525999A5/ja
Application granted granted Critical
Publication of JP5184890B2 publication Critical patent/JP5184890B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2007547030A 2004-12-21 2005-12-20 基板のための処理チャンバ Expired - Lifetime JP5184890B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US63789704P 2004-12-21 2004-12-21
US60/637,897 2004-12-21
US11/137,200 US20060130971A1 (en) 2004-12-21 2005-05-24 Apparatus for generating plasma by RF power
US11/137,200 2005-05-24
US11/266,167 2005-11-03
US11/266,167 US20060051966A1 (en) 2004-02-26 2005-11-03 In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
PCT/US2005/046226 WO2006069085A2 (en) 2004-12-21 2005-12-20 An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012204729A Division JP5698719B2 (ja) 2004-12-21 2012-09-18 化学蒸着エッチングチャンバから副生成物の堆積物を除去するインサイチュチャンバ洗浄プロセス

Publications (3)

Publication Number Publication Date
JP2008525999A JP2008525999A (ja) 2008-07-17
JP2008525999A5 JP2008525999A5 (https=) 2009-02-12
JP5184890B2 true JP5184890B2 (ja) 2013-04-17

Family

ID=36594226

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007547030A Expired - Lifetime JP5184890B2 (ja) 2004-12-21 2005-12-20 基板のための処理チャンバ
JP2012204729A Expired - Lifetime JP5698719B2 (ja) 2004-12-21 2012-09-18 化学蒸着エッチングチャンバから副生成物の堆積物を除去するインサイチュチャンバ洗浄プロセス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012204729A Expired - Lifetime JP5698719B2 (ja) 2004-12-21 2012-09-18 化学蒸着エッチングチャンバから副生成物の堆積物を除去するインサイチュチャンバ洗浄プロセス

Country Status (2)

Country Link
JP (2) JP5184890B2 (https=)
TW (1) TWI387667B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5260861B2 (ja) * 2006-11-29 2013-08-14 東京エレクトロン株式会社 キャパシタ電極の製造方法と製造システムおよび記録媒体
US8642477B2 (en) 2008-05-30 2014-02-04 United Microelectronics Corp. Method for clearing native oxide
CN103109357B (zh) * 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
JP5703000B2 (ja) * 2010-12-01 2015-04-15 株式会社アルバック ラジカルクリーニング方法
EP3267470A3 (en) 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
JP2015138931A (ja) * 2014-01-24 2015-07-30 株式会社日立ハイテクノロジーズ 真空処理装置および真空処理方法
US10203604B2 (en) * 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
WO2017123423A1 (en) * 2016-01-13 2017-07-20 Applied Materials, Inc. Hydrogen plasma based cleaning process for etch hardware
US10337105B2 (en) * 2016-01-13 2019-07-02 Mks Instruments, Inc. Method and apparatus for valve deposition cleaning and prevention by plasma discharge
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US10522371B2 (en) * 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
JP6742265B2 (ja) * 2017-03-28 2020-08-19 東京エレクトロン株式会社 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置
JP2020516770A (ja) * 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
JP6615153B2 (ja) * 2017-06-16 2019-12-04 東京エレクトロン株式会社 基板処理装置、基板載置機構、および基板処理方法
DE202018100363U1 (de) * 2018-01-23 2019-04-24 Aixtron Se Vorrichtung zum Verbinden eines Suszeptors mit einer Antriebswelle
US11685994B2 (en) * 2019-09-13 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. CVD device pumping liner
JP7576920B2 (ja) * 2020-03-27 2024-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US11626303B2 (en) * 2020-04-23 2023-04-11 Applied Materials, Inc. Compliance components for semiconductor processing system
KR102516340B1 (ko) * 2020-09-08 2023-03-31 주식회사 유진테크 기판 처리 장치 및 기판 처리 장치의 운용 방법
CN116982411A (zh) * 2021-03-22 2023-10-31 株式会社国际电气 电极、基板处理装置、半导体装置的制造方法以及程序
US20230070804A1 (en) * 2021-09-02 2023-03-09 Wonik Ips Co., Ltd. Substrate processing apparatus
TWI862173B (zh) * 2023-09-15 2024-11-11 奈晶科技股份有限公司 擴散板除去副生成物的表面處理方法
CN121653601B (zh) * 2026-02-06 2026-04-17 江苏沃能成电子科技有限公司 一种多功能集成的真空镀膜设备及其镀膜工艺

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01289110A (ja) * 1988-05-17 1989-11-21 Canon Inc 堆積膜形成法
JPH02121330A (ja) * 1988-10-31 1990-05-09 Hitachi Ltd プラズマ処理方法及び装置
JPH05235520A (ja) * 1992-02-20 1993-09-10 Matsushita Electric Works Ltd 回路用基板のプラズマ処理方法
EP0697467A1 (en) * 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US5812403A (en) * 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
JP4121269B2 (ja) * 2001-11-27 2008-07-23 日本エー・エス・エム株式会社 セルフクリーニングを実行するプラズマｃｖｄ装置及び方法
JP2003249490A (ja) * 2001-12-20 2003-09-05 Mitsubishi Heavy Ind Ltd ラジカルガン
US6921556B2 (en) * 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
JP3838969B2 (ja) * 2002-12-17 2006-10-25 沖電気工業株式会社 ドライエッチング方法

Also Published As

Publication number Publication date
JP2008525999A (ja) 2008-07-17
TWI387667B (zh) 2013-03-01
JP5698719B2 (ja) 2015-04-08
JP2012256942A (ja) 2012-12-27
TW200628633A (en) 2006-08-16

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