TWI387667B - 用於自化學氣相蝕刻處理室移除副產物沉積的原位處理室清潔製程 - Google Patents

用於自化學氣相蝕刻處理室移除副產物沉積的原位處理室清潔製程 Download PDF

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Publication number
TWI387667B
TWI387667B TW094145341A TW94145341A TWI387667B TW I387667 B TWI387667 B TW I387667B TW 094145341 A TW094145341 A TW 094145341A TW 94145341 A TW94145341 A TW 94145341A TW I387667 B TWI387667 B TW I387667B
Authority
TW
Taiwan
Prior art keywords
reaction chamber
gas
electrode
substrate
support member
Prior art date
Application number
TW094145341A
Other languages
English (en)
Chinese (zh)
Other versions
TW200628633A (en
Inventor
高建德
周靜珮
悠莫多伊沙爾瓦德Ｐ
常眉
袁小雄
張鈾
呂新亮
潘思瑛
寬威廉
祖國權
歐得大衛Ｔ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/137,200 external-priority patent/US20060130971A1/en
Priority claimed from US11/266,167 external-priority patent/US20060051966A1/en
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200628633A publication Critical patent/TW200628633A/zh
Application granted granted Critical
Publication of TWI387667B publication Critical patent/TWI387667B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
TW094145341A 2004-12-21 2005-12-20 用於自化學氣相蝕刻處理室移除副產物沉積的原位處理室清潔製程 TWI387667B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US63789704P 2004-12-21 2004-12-21
US11/137,200 US20060130971A1 (en) 2004-12-21 2005-05-24 Apparatus for generating plasma by RF power
US11/266,167 US20060051966A1 (en) 2004-02-26 2005-11-03 In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber

Publications (2)

Publication Number Publication Date
TW200628633A TW200628633A (en) 2006-08-16
TWI387667B true TWI387667B (zh) 2013-03-01

Family

ID=36594226

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094145341A TWI387667B (zh) 2004-12-21 2005-12-20 用於自化學氣相蝕刻處理室移除副產物沉積的原位處理室清潔製程

Country Status (2)

Country Link
JP (2) JP5184890B2 (https=)
TW (1) TWI387667B (https=)

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TWI860502B (zh) * 2021-03-22 2024-11-01 日商國際電氣股份有限公司 電極、基板處理裝置、半導體裝置之製造方法及程式

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JP5260861B2 (ja) * 2006-11-29 2013-08-14 東京エレクトロン株式会社 キャパシタ電極の製造方法と製造システムおよび記録媒体
US8642477B2 (en) 2008-05-30 2014-02-04 United Microelectronics Corp. Method for clearing native oxide
CN103109357B (zh) * 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
JP5703000B2 (ja) * 2010-12-01 2015-04-15 株式会社アルバック ラジカルクリーニング方法
EP3267470A3 (en) 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
JP2015138931A (ja) * 2014-01-24 2015-07-30 株式会社日立ハイテクノロジーズ 真空処理装置および真空処理方法
US10203604B2 (en) * 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
WO2017123423A1 (en) * 2016-01-13 2017-07-20 Applied Materials, Inc. Hydrogen plasma based cleaning process for etch hardware
US10337105B2 (en) * 2016-01-13 2019-07-02 Mks Instruments, Inc. Method and apparatus for valve deposition cleaning and prevention by plasma discharge
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US10522371B2 (en) * 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
JP6742265B2 (ja) * 2017-03-28 2020-08-19 東京エレクトロン株式会社 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置
JP2020516770A (ja) * 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
JP6615153B2 (ja) * 2017-06-16 2019-12-04 東京エレクトロン株式会社 基板処理装置、基板載置機構、および基板処理方法
DE202018100363U1 (de) * 2018-01-23 2019-04-24 Aixtron Se Vorrichtung zum Verbinden eines Suszeptors mit einer Antriebswelle
US11685994B2 (en) * 2019-09-13 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. CVD device pumping liner
JP7576920B2 (ja) * 2020-03-27 2024-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US11626303B2 (en) * 2020-04-23 2023-04-11 Applied Materials, Inc. Compliance components for semiconductor processing system
KR102516340B1 (ko) * 2020-09-08 2023-03-31 주식회사 유진테크 기판 처리 장치 및 기판 처리 장치의 운용 방법
US20230070804A1 (en) * 2021-09-02 2023-03-09 Wonik Ips Co., Ltd. Substrate processing apparatus
TWI862173B (zh) * 2023-09-15 2024-11-11 奈晶科技股份有限公司 擴散板除去副生成物的表面處理方法
CN121653601B (zh) * 2026-02-06 2026-04-17 江苏沃能成电子科技有限公司 一种多功能集成的真空镀膜设备及其镀膜工艺

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JPH02121330A (ja) * 1988-10-31 1990-05-09 Hitachi Ltd プラズマ処理方法及び装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI860502B (zh) * 2021-03-22 2024-11-01 日商國際電氣股份有限公司 電極、基板處理裝置、半導體裝置之製造方法及程式

Also Published As

Publication number Publication date
JP5184890B2 (ja) 2013-04-17
JP2008525999A (ja) 2008-07-17
JP5698719B2 (ja) 2015-04-08
JP2012256942A (ja) 2012-12-27
TW200628633A (en) 2006-08-16

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