JP5184730B2 - プラズマの均一性を電気的に制御可能なプラズマ発生装置 - Google Patents

プラズマの均一性を電気的に制御可能なプラズマ発生装置 Download PDF

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Publication number
JP5184730B2
JP5184730B2 JP2001563571A JP2001563571A JP5184730B2 JP 5184730 B2 JP5184730 B2 JP 5184730B2 JP 2001563571 A JP2001563571 A JP 2001563571A JP 2001563571 A JP2001563571 A JP 2001563571A JP 5184730 B2 JP5184730 B2 JP 5184730B2
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coil
plasma
coils
central axis
independent coils
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JP2003525519A5 (enExample
JP2003525519A (ja
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ジョンソン、ウェイン・エル
ウインドホーン、トーマス・エイチ
ストラング、エリック・ジェイ
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
JP2001563571A 2000-03-01 2001-02-28 プラズマの均一性を電気的に制御可能なプラズマ発生装置 Expired - Fee Related JP5184730B2 (ja)

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Application Number Priority Date Filing Date Title
US18627900P 2000-03-01 2000-03-01
US60/186,279 2000-03-01
PCT/US2001/006239 WO2001065895A2 (en) 2000-03-01 2001-02-28 Electrically controlled plasma uniformity in a high density plasma source

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JP2003525519A JP2003525519A (ja) 2003-08-26
JP2003525519A5 JP2003525519A5 (enExample) 2011-01-20
JP5184730B2 true JP5184730B2 (ja) 2013-04-17

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JP2001563571A Expired - Fee Related JP5184730B2 (ja) 2000-03-01 2001-02-28 プラズマの均一性を電気的に制御可能なプラズマ発生装置

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US (1) US7019253B2 (enExample)
JP (1) JP5184730B2 (enExample)
AU (1) AU2001239906A1 (enExample)
TW (1) TW491001B (enExample)
WO (1) WO2001065895A2 (enExample)

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JP6454488B2 (ja) * 2014-07-10 2019-01-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9355866B2 (en) * 2014-09-30 2016-05-31 Hitachi Kokusai Elecetric, Inc. Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
CN106234557A (zh) * 2016-10-10 2016-12-21 成都沃特塞恩电子技术有限公司 一种射频功率源和射频解冻装置
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JP7438853B2 (ja) * 2020-06-05 2024-02-27 株式会社アルバック マグネトロンスパッタリング装置
KR20230056456A (ko) * 2021-10-20 2023-04-27 삼성전자주식회사 플라즈마 생성기, 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
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Also Published As

Publication number Publication date
TW491001B (en) 2002-06-11
US7019253B2 (en) 2006-03-28
WO2001065895A3 (en) 2002-02-07
AU2001239906A1 (en) 2001-09-12
JP2003525519A (ja) 2003-08-26
WO2001065895A2 (en) 2001-09-07
US20030006019A1 (en) 2003-01-09

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