AU2001239906A1 - Electrically controlled plasma uniformity in a high density plasma source - Google Patents

Electrically controlled plasma uniformity in a high density plasma source

Info

Publication number
AU2001239906A1
AU2001239906A1 AU2001239906A AU3990601A AU2001239906A1 AU 2001239906 A1 AU2001239906 A1 AU 2001239906A1 AU 2001239906 A AU2001239906 A AU 2001239906A AU 3990601 A AU3990601 A AU 3990601A AU 2001239906 A1 AU2001239906 A1 AU 2001239906A1
Authority
AU
Australia
Prior art keywords
high density
electrically controlled
uniformity
plasma source
density plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001239906A
Other languages
English (en)
Inventor
Wayne L. Johnson
Eric J. Strang
Thomas H. Windhorn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001239906A1 publication Critical patent/AU2001239906A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
AU2001239906A 2000-03-01 2001-02-28 Electrically controlled plasma uniformity in a high density plasma source Abandoned AU2001239906A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18627900P 2000-03-01 2000-03-01
US60186279 2000-03-01
PCT/US2001/006239 WO2001065895A2 (en) 2000-03-01 2001-02-28 Electrically controlled plasma uniformity in a high density plasma source

Publications (1)

Publication Number Publication Date
AU2001239906A1 true AU2001239906A1 (en) 2001-09-12

Family

ID=22684322

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001239906A Abandoned AU2001239906A1 (en) 2000-03-01 2001-02-28 Electrically controlled plasma uniformity in a high density plasma source

Country Status (5)

Country Link
US (1) US7019253B2 (enExample)
JP (1) JP5184730B2 (enExample)
AU (1) AU2001239906A1 (enExample)
TW (1) TW491001B (enExample)
WO (1) WO2001065895A2 (enExample)

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JP6454488B2 (ja) * 2014-07-10 2019-01-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9355866B2 (en) * 2014-09-30 2016-05-31 Hitachi Kokusai Elecetric, Inc. Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
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US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
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Also Published As

Publication number Publication date
TW491001B (en) 2002-06-11
US7019253B2 (en) 2006-03-28
WO2001065895A3 (en) 2002-02-07
JP5184730B2 (ja) 2013-04-17
JP2003525519A (ja) 2003-08-26
WO2001065895A2 (en) 2001-09-07
US20030006019A1 (en) 2003-01-09

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