JP5183838B2 - 発光装置 - Google Patents

発光装置 Download PDF

Info

Publication number
JP5183838B2
JP5183838B2 JP2001142693A JP2001142693A JP5183838B2 JP 5183838 B2 JP5183838 B2 JP 5183838B2 JP 2001142693 A JP2001142693 A JP 2001142693A JP 2001142693 A JP2001142693 A JP 2001142693A JP 5183838 B2 JP5183838 B2 JP 5183838B2
Authority
JP
Japan
Prior art keywords
film
tft
gate
circuit
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001142693A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002049333A (ja
JP2002049333A5 (enExample
Inventor
舜平 山崎
潤 小山
徹 高山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001142693A priority Critical patent/JP5183838B2/ja
Publication of JP2002049333A publication Critical patent/JP2002049333A/ja
Publication of JP2002049333A5 publication Critical patent/JP2002049333A5/ja
Application granted granted Critical
Publication of JP5183838B2 publication Critical patent/JP5183838B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001142693A 2000-05-12 2001-05-14 発光装置 Expired - Fee Related JP5183838B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001142693A JP5183838B2 (ja) 2000-05-12 2001-05-14 発光装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-140043 2000-05-12
JP2000140043 2000-05-12
JP2000140043 2000-05-12
JP2001142693A JP5183838B2 (ja) 2000-05-12 2001-05-14 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011212278A Division JP5542260B2 (ja) 2000-05-12 2011-09-28 半導体装置及びモジュール

Publications (3)

Publication Number Publication Date
JP2002049333A JP2002049333A (ja) 2002-02-15
JP2002049333A5 JP2002049333A5 (enExample) 2008-05-22
JP5183838B2 true JP5183838B2 (ja) 2013-04-17

Family

ID=26591769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001142693A Expired - Fee Related JP5183838B2 (ja) 2000-05-12 2001-05-14 発光装置

Country Status (1)

Country Link
JP (1) JP5183838B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015096955A (ja) * 2000-05-12 2015-05-21 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6444420A (en) * 1987-08-11 1989-02-16 Fujitsu Ltd Opposed matrix type tft panel
JP3729262B2 (ja) 2002-08-29 2005-12-21 セイコーエプソン株式会社 エレクトロルミネセンス装置及び電子機器
JP2004103337A (ja) * 2002-09-06 2004-04-02 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
JP3997888B2 (ja) 2002-10-25 2007-10-24 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法及び電子機器
CN101882668B (zh) * 2002-12-19 2012-05-09 株式会社半导体能源研究所 显示装置
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
CN100464429C (zh) 2003-10-28 2009-02-25 株式会社半导体能源研究所 液晶显示设备及其制造方法,以及液晶电视接收机
KR101088103B1 (ko) 2003-10-28 2011-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치, 및 텔레비전 수상기
US8247965B2 (en) 2003-11-14 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device and method for manufacturing the same
WO2005048353A1 (en) 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing liquid crystal display device
JP4736544B2 (ja) * 2005-06-01 2011-07-27 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4613700B2 (ja) * 2005-06-01 2011-01-19 セイコーエプソン株式会社 電気光学装置及び電子機器
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
JP5117001B2 (ja) * 2006-07-07 2013-01-09 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置
JP5525224B2 (ja) * 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
KR101785887B1 (ko) 2008-11-21 2017-10-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
JP5099452B2 (ja) * 2008-12-15 2012-12-19 カシオ計算機株式会社 発光パネル及びその製造方法
JP2011233502A (ja) * 2010-04-26 2011-11-17 Samsung Mobile Display Co Ltd 有機発光ディスプレイ装置
JP2010238678A (ja) * 2010-07-28 2010-10-21 Semiconductor Energy Lab Co Ltd 発光装置の作製方法および発光装置
US9466618B2 (en) 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
US9324449B2 (en) * 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
KR102161078B1 (ko) * 2012-08-28 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
TWI666623B (zh) 2013-07-10 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置、驅動器電路及顯示裝置
JP6154442B2 (ja) * 2015-08-19 2017-06-28 株式会社半導体エネルギー研究所 発光装置
JP6297654B2 (ja) * 2016-09-29 2018-03-20 株式会社半導体エネルギー研究所 発光装置
JP2020024425A (ja) * 2019-09-26 2020-02-13 株式会社半導体エネルギー研究所 発光装置
WO2023166379A1 (ja) 2022-03-04 2023-09-07 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06102530A (ja) * 1992-09-18 1994-04-15 Sharp Corp 液晶表示装置
JP3402400B2 (ja) * 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US5686360A (en) * 1995-11-30 1997-11-11 Motorola Passivation of organic devices
JPH09300621A (ja) * 1996-05-14 1997-11-25 Fuji Xerox Co Ltd インクジェット記録ヘッド
JPH09311342A (ja) * 1996-05-16 1997-12-02 Semiconductor Energy Lab Co Ltd 表示装置
JP3640224B2 (ja) * 1996-06-25 2005-04-20 株式会社半導体エネルギー研究所 液晶表示パネル
JPH10319872A (ja) * 1997-01-17 1998-12-04 Xerox Corp アクティブマトリクス有機発光ダイオード表示装置
JP3108991B2 (ja) * 1997-02-07 2000-11-13 セイコーエプソン株式会社 アクティブマトリクスパネル及びアクティブマトリクスパネル用駆動回路、ビューファインダー並びに投射型表示装置
JP3524711B2 (ja) * 1997-03-18 2004-05-10 三洋電機株式会社 有機エレクトロルミネッセンス素子及びその製造方法
JP3942701B2 (ja) * 1997-09-03 2007-07-11 株式会社半導体エネルギー研究所 表示装置の作製方法
JP3252897B2 (ja) * 1998-03-31 2002-02-04 日本電気株式会社 素子駆動装置および方法、画像表示装置
JP3238684B2 (ja) * 1999-08-05 2001-12-17 株式会社半導体エネルギー研究所 半導体回路の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015096955A (ja) * 2000-05-12 2015-05-21 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JP2002049333A (ja) 2002-02-15

Similar Documents

Publication Publication Date Title
JP5542260B2 (ja) 半導体装置及びモジュール
JP5183838B2 (ja) 発光装置
US6876007B2 (en) Light emitting device driving by alternating current in which light emission is always obtained
JP5796097B2 (ja) 発光装置及び電気器具

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080403

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080403

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110719

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110928

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120508

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120628

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130115

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130116

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5183838

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160125

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160125

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees