JP5181197B2 - 集積装置 - Google Patents

集積装置 Download PDF

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Publication number
JP5181197B2
JP5181197B2 JP2004502358A JP2004502358A JP5181197B2 JP 5181197 B2 JP5181197 B2 JP 5181197B2 JP 2004502358 A JP2004502358 A JP 2004502358A JP 2004502358 A JP2004502358 A JP 2004502358A JP 5181197 B2 JP5181197 B2 JP 5181197B2
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JP
Japan
Prior art keywords
linear
region
regions
linear element
longitudinal direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004502358A
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English (en)
Japanese (ja)
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JPWO2003094238A1 (ja
Inventor
泰彦 笠間
研次 表
諭 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ideal Star Inc
Original Assignee
Ideal Star Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ideal Star Inc filed Critical Ideal Star Inc
Priority to JP2004502358A priority Critical patent/JP5181197B2/ja
Publication of JPWO2003094238A1 publication Critical patent/JPWO2003094238A1/ja
Application granted granted Critical
Publication of JP5181197B2 publication Critical patent/JP5181197B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004502358A 2002-05-02 2003-05-02 集積装置 Expired - Fee Related JP5181197B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004502358A JP5181197B2 (ja) 2002-05-02 2003-05-02 集積装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002131012 2002-05-02
JP2002131012 2002-05-02
JP2004502358A JP5181197B2 (ja) 2002-05-02 2003-05-02 集積装置
PCT/JP2003/005621 WO2003094238A1 (fr) 2002-05-02 2003-05-02 Dispositif integre

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010140736A Division JP5272157B2 (ja) 2002-05-02 2010-06-21 集積装置

Publications (2)

Publication Number Publication Date
JPWO2003094238A1 JPWO2003094238A1 (ja) 2005-09-08
JP5181197B2 true JP5181197B2 (ja) 2013-04-10

Family

ID=29397338

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2004502358A Expired - Fee Related JP5181197B2 (ja) 2002-05-02 2003-05-02 集積装置
JP2010140736A Expired - Fee Related JP5272157B2 (ja) 2002-05-02 2010-06-21 集積装置
JP2012210002A Expired - Fee Related JP5731460B2 (ja) 2002-05-02 2012-09-24 集積装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010140736A Expired - Fee Related JP5272157B2 (ja) 2002-05-02 2010-06-21 集積装置
JP2012210002A Expired - Fee Related JP5731460B2 (ja) 2002-05-02 2012-09-24 集積装置

Country Status (7)

Country Link
US (1) US20050218461A1 (https=)
JP (3) JP5181197B2 (https=)
KR (1) KR20040101569A (https=)
CN (1) CN1650434A (https=)
AU (1) AU2003231391A1 (https=)
TW (1) TW200405579A (https=)
WO (1) WO2003094238A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2855375B2 (ja) 1991-06-05 1999-02-10 三菱レイヨン株式会社 機械的強度に優れた固体触媒及びその製造法
KR101085378B1 (ko) * 2003-07-10 2011-11-21 가부시키가이샤 이디알 스타 발광 소자 및 발광 장치
US7495307B2 (en) * 2003-11-20 2009-02-24 Ideal Star Inc. Columnar electric device
US7608855B2 (en) * 2004-04-02 2009-10-27 Spansion Llc Polymer dielectrics for memory element array interconnect
IL169547A0 (en) * 2005-07-06 2007-07-04 Israel Baumberg Electroluminescent cable with composite core electrode
CN101422078B (zh) * 2006-04-12 2011-01-26 Lg化学株式会社 有机发光二极管元件及其制备方法
US20100159242A1 (en) * 2008-12-18 2010-06-24 Venkata Adiseshaiah Bhagavatula Semiconductor Core, Integrated Fibrous Photovoltaic Device
US20100154877A1 (en) * 2008-12-18 2010-06-24 Venkata Adiseshaiah Bhagavatula Semiconductor Core, Integrated Fibrous Photovoltaic Device
FR2941089B1 (fr) * 2009-01-15 2011-01-21 Commissariat Energie Atomique Transistor a source et drain filaires
JP5339149B2 (ja) * 2009-09-28 2013-11-13 独立行政法人産業技術総合研究所 繊維状基材及び機能性フレキシブルシート
GB2588750A (en) 2019-10-16 2021-05-12 Norfib As Wafer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232467A (ja) * 1987-01-13 1988-09-28 ヘルムート・ヘーグル 太陽電池
JPH10256579A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 光電変換素子
JP2000021727A (ja) * 1998-07-01 2000-01-21 Asahi Optical Co Ltd 半導体回路形成装置
JP2001077445A (ja) * 1999-06-21 2001-03-23 Sony Corp 機能一次元構造体の製造方法および機能構造体の製造方法
JP2002258775A (ja) * 2001-03-05 2002-09-11 Matsushita Electric Ind Co Ltd 透光性導電性線状材料、繊維状蛍光体及び織物型表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168632A (ja) * 1992-11-30 1994-06-14 Hitachi Cable Ltd 難燃性絶縁電線
JPH09102624A (ja) * 1995-10-06 1997-04-15 Daikyo Denshi Densen Kk 太陽光発電体
JP2000031006A (ja) * 1998-07-08 2000-01-28 Asahi Optical Co Ltd 半導体回路形成装置
JP2000294821A (ja) * 1999-04-01 2000-10-20 Sentaro Sugita 光発電素子、並びに、ソーラーセル
US6437422B1 (en) * 2001-05-09 2002-08-20 International Business Machines Corporation Active devices using threads
JP2003161844A (ja) * 2001-11-26 2003-06-06 Japan Science & Technology Corp 織物構造によるハイブリッド集積回路及びその電子・光集積装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232467A (ja) * 1987-01-13 1988-09-28 ヘルムート・ヘーグル 太陽電池
JPH10256579A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 光電変換素子
JP2000021727A (ja) * 1998-07-01 2000-01-21 Asahi Optical Co Ltd 半導体回路形成装置
JP2001077445A (ja) * 1999-06-21 2001-03-23 Sony Corp 機能一次元構造体の製造方法および機能構造体の製造方法
JP2002258775A (ja) * 2001-03-05 2002-09-11 Matsushita Electric Ind Co Ltd 透光性導電性線状材料、繊維状蛍光体及び織物型表示装置

Also Published As

Publication number Publication date
JP5731460B2 (ja) 2015-06-10
JPWO2003094238A1 (ja) 2005-09-08
WO2003094238A1 (fr) 2003-11-13
TW200405579A (en) 2004-04-01
CN1650434A (zh) 2005-08-03
JP2010258464A (ja) 2010-11-11
AU2003231391A1 (en) 2003-11-17
JP2013042151A (ja) 2013-02-28
US20050218461A1 (en) 2005-10-06
KR20040101569A (ko) 2004-12-02
JP5272157B2 (ja) 2013-08-28

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