JP5173496B2 - 撮像装置及び撮像システム - Google Patents

撮像装置及び撮像システム Download PDF

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Publication number
JP5173496B2
JP5173496B2 JP2008056625A JP2008056625A JP5173496B2 JP 5173496 B2 JP5173496 B2 JP 5173496B2 JP 2008056625 A JP2008056625 A JP 2008056625A JP 2008056625 A JP2008056625 A JP 2008056625A JP 5173496 B2 JP5173496 B2 JP 5173496B2
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Japan
Prior art keywords
imaging
center
pixel
region
photoelectric conversion
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Expired - Fee Related
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JP2008056625A
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English (en)
Japanese (ja)
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JP2009212465A (ja
JP2009212465A5 (enExample
Inventor
聡子 飯田
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008056625A priority Critical patent/JP5173496B2/ja
Priority to US12/370,928 priority patent/US7812382B2/en
Priority to CN2009100079722A priority patent/CN101527311B/zh
Publication of JP2009212465A publication Critical patent/JP2009212465A/ja
Publication of JP2009212465A5 publication Critical patent/JP2009212465A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2008056625A 2008-03-06 2008-03-06 撮像装置及び撮像システム Expired - Fee Related JP5173496B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008056625A JP5173496B2 (ja) 2008-03-06 2008-03-06 撮像装置及び撮像システム
US12/370,928 US7812382B2 (en) 2008-03-06 2009-02-13 Image sensing apparatus and imaging system
CN2009100079722A CN101527311B (zh) 2008-03-06 2009-03-06 图像感测装置和成像系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008056625A JP5173496B2 (ja) 2008-03-06 2008-03-06 撮像装置及び撮像システム

Publications (3)

Publication Number Publication Date
JP2009212465A JP2009212465A (ja) 2009-09-17
JP2009212465A5 JP2009212465A5 (enExample) 2011-03-17
JP5173496B2 true JP5173496B2 (ja) 2013-04-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008056625A Expired - Fee Related JP5173496B2 (ja) 2008-03-06 2008-03-06 撮像装置及び撮像システム

Country Status (3)

Country Link
US (1) US7812382B2 (enExample)
JP (1) JP5173496B2 (enExample)
CN (1) CN101527311B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010239001A (ja) * 2009-03-31 2010-10-21 Sony Corp 容量素子とその製造方法および固体撮像装置と撮像装置
JP5585232B2 (ja) 2010-06-18 2014-09-10 ソニー株式会社 固体撮像装置、電子機器
JP2013004635A (ja) * 2011-06-14 2013-01-07 Canon Inc 撮像素子、撮像装置、及び、形成方法
JP6141024B2 (ja) 2012-02-10 2017-06-07 キヤノン株式会社 撮像装置および撮像システム
JP5956840B2 (ja) 2012-06-20 2016-07-27 キヤノン株式会社 固体撮像装置及びカメラ
WO2014087807A1 (ja) * 2012-12-05 2014-06-12 富士フイルム株式会社 撮像装置、異常斜め入射光検出方法及びプログラム、並びに記録媒体
WO2014087804A1 (ja) * 2012-12-07 2014-06-12 富士フイルム株式会社 撮像装置、画像処理方法及びプログラム
CN104995912B (zh) * 2013-03-05 2017-03-08 富士胶片株式会社 摄像装置、图像处理装置及图像处理方法
JP6448289B2 (ja) * 2014-10-07 2019-01-09 キヤノン株式会社 撮像装置及び撮像システム
WO2016103430A1 (ja) * 2014-12-25 2016-06-30 キヤノン株式会社 ラインセンサ、画像読取装置、画像形成装置
US10658408B2 (en) * 2015-01-13 2020-05-19 Sony Semiconductor Solutions Corporation Solid-state imaging device, manufacturing method thereof, and electronic apparatus
KR102720685B1 (ko) * 2019-06-10 2024-10-22 삼성전자주식회사 Af 픽셀을 포함하는 이미지 센서
KR20220063830A (ko) * 2020-11-10 2022-05-18 삼성전자주식회사 이미지 센서

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4708583B2 (ja) * 2001-02-21 2011-06-22 キヤノン株式会社 撮像装置
JP2002320141A (ja) * 2001-04-20 2002-10-31 Canon Inc 固体撮像装置および撮像方法
JP4759886B2 (ja) 2001-09-03 2011-08-31 ソニー株式会社 固体撮像装置
JP4221940B2 (ja) 2002-03-13 2009-02-12 ソニー株式会社 固体撮像素子及び固体撮像装置並びに撮像システム
US6838715B1 (en) * 2002-04-30 2005-01-04 Ess Technology, Inc. CMOS image sensor arrangement with reduced pixel light shadowing
JP2004165462A (ja) * 2002-11-14 2004-06-10 Sony Corp 固体撮像素子及びその製造方法
JP2006073885A (ja) * 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
JP4718875B2 (ja) * 2005-03-31 2011-07-06 株式会社東芝 固体撮像素子
US7432491B2 (en) * 2005-05-06 2008-10-07 Micron Technology, Inc. Pixel with spatially varying sensor positions
TWI310987B (en) * 2005-07-09 2009-06-11 Samsung Electronics Co Ltd Image sensors including active pixel sensor arrays
JP2007189129A (ja) 2006-01-16 2007-07-26 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2007227474A (ja) * 2006-02-21 2007-09-06 Matsushita Electric Ind Co Ltd 固体撮像装置
US20080211050A1 (en) * 2007-03-01 2008-09-04 Hiok Nam Tay Image sensor with inter-pixel isolation
EP2197032B1 (en) * 2007-09-12 2014-11-05 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device

Also Published As

Publication number Publication date
CN101527311A (zh) 2009-09-09
CN101527311B (zh) 2011-04-13
US20090224346A1 (en) 2009-09-10
JP2009212465A (ja) 2009-09-17
US7812382B2 (en) 2010-10-12

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