JP5168657B2 - 粒状シリコン製造方法およびその装置 - Google Patents
粒状シリコン製造方法およびその装置 Download PDFInfo
- Publication number
- JP5168657B2 JP5168657B2 JP2008273563A JP2008273563A JP5168657B2 JP 5168657 B2 JP5168657 B2 JP 5168657B2 JP 2008273563 A JP2008273563 A JP 2008273563A JP 2008273563 A JP2008273563 A JP 2008273563A JP 5168657 B2 JP5168657 B2 JP 5168657B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- lower opening
- crucible
- frequency induction
- granular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 186
- 229910052710 silicon Inorganic materials 0.000 title claims description 183
- 239000010703 silicon Substances 0.000 title claims description 183
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 230000006698 induction Effects 0.000 claims description 57
- 238000010438 heat treatment Methods 0.000 claims description 46
- 239000000843 powder Substances 0.000 claims description 33
- 238000002844 melting Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- 230000001603 reducing effect Effects 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 9
- 238000003780 insertion Methods 0.000 claims description 6
- 230000037431 insertion Effects 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000284 extract Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 12
- 239000002210 silicon-based material Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008273563A JP5168657B2 (ja) | 2008-10-23 | 2008-10-23 | 粒状シリコン製造方法およびその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008273563A JP5168657B2 (ja) | 2008-10-23 | 2008-10-23 | 粒状シリコン製造方法およびその装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010100482A JP2010100482A (ja) | 2010-05-06 |
| JP2010100482A5 JP2010100482A5 (enExample) | 2012-02-16 |
| JP5168657B2 true JP5168657B2 (ja) | 2013-03-21 |
Family
ID=42291478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008273563A Expired - Fee Related JP5168657B2 (ja) | 2008-10-23 | 2008-10-23 | 粒状シリコン製造方法およびその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5168657B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101258747B1 (ko) | 2010-11-19 | 2013-05-07 | 박철훈 | 실리콘 재처리 장치 및 그 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001048697A (ja) * | 1999-07-29 | 2001-02-20 | Kyocera Corp | 粉状シリコンの溶解方法 |
| JP4126450B2 (ja) * | 2002-02-22 | 2008-07-30 | 京セラ株式会社 | 溶解方法 |
| JP2004244276A (ja) * | 2003-02-14 | 2004-09-02 | Kyocera Corp | 溶解装置 |
| JP2005016855A (ja) * | 2003-06-26 | 2005-01-20 | Kyocera Corp | 鋳造装置 |
| JP2006206368A (ja) * | 2005-01-27 | 2006-08-10 | Fuji Mach Mfg Co Ltd | 粒状シリコンの製造方法及び製造装置 |
| WO2008047881A1 (fr) * | 2006-10-19 | 2008-04-24 | Kyocera Corporation | Procédé et appareil de production de grain de silicium cristallin |
-
2008
- 2008-10-23 JP JP2008273563A patent/JP5168657B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010100482A (ja) | 2010-05-06 |
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