JP5759382B2 - 誘導法により多結晶シリコンインゴットを製造する方法 - Google Patents
誘導法により多結晶シリコンインゴットを製造する方法 Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 68
- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 230000006698 induction Effects 0.000 title claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- 230000008018 melting Effects 0.000 claims description 43
- 238000002844 melting Methods 0.000 claims description 39
- 238000001816 cooling Methods 0.000 claims description 37
- 239000012535 impurity Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 21
- 238000005266 casting Methods 0.000 claims description 19
- 239000007858 starting material Substances 0.000 claims description 13
- 238000004090 dissolution Methods 0.000 claims description 11
- 230000005672 electromagnetic field Effects 0.000 claims description 11
- 230000008646 thermal stress Effects 0.000 claims description 7
- 238000004320 controlled atmosphere Methods 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010309 melting process Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 210000003625 skull Anatomy 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004157 plasmatron Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/02—Use of electric or magnetic effects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/005—Transport systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
この先行技術機器の欠点は、例えば鉄(Fe)とアルミニウム(Al)の含有量の高いことを特徴とする冶金グレードのシリコンなど、不純物含有量の高いシリコン塊バッチを使う場合、インゴットの品質と製造出力が低下することである。太陽電池の動作性能は、Fe含有量が0.01ppmwを超え、Al含有量が0.1ppmwを超えると低下する。特定された不純物を隔離すると、製造された多結晶シリコンインゴットの2〜4m以下という限られた長さ内では、不純物の量に応じて満足のいくシリコン品質が保たれる。但し、特定の長さのインゴットを製造する際、水冷るつぼおよび制御冷却区画から前記インゴットを移動させるために必要な時間は、誘導溶解および鋳造にかかる時間と比べて長くなり、設備能力も低下する。
この出願の発明に関連する先行技術文献情報としては、以下のものがある(国際出願日以降国際段階で引用された文献及び他国に国内移行した際に引用された文献を含む)。
【先行技術文献】
【特許文献】
【特許文献2】 米国特許出願公開第2008/179037号明細書
【特許文献3】 米国特許出願公開第2008/283211号明細書
Claims (1)
- 誘導法により多結晶シリコンインゴットを製造するための方法であって、
気密且つ一体的に形成された単一の不可欠なチャンバー(1)を設け、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)に内蔵された水冷るつぼ(3)を設け、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内に設置され、且つ前記水冷るつぼ(3)を取り囲むインダクタ(4)を設け、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)に内蔵された第一の可動底部(5)を設け、
前記水冷るつぼ(3)および前記第一の可動底部(5)により形成された第一の溶解空間(18)を設け、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)に伸びる出口部を有し、シリコン塊充填材料(8)を前記第一の溶解空間(18)に降下させるように前記第一の溶解空間(18)に設置されてなる充填容器(2)を設け、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内に設置され、前記インダクタ(4)によって生成された放射熱および前記インダクタ(4)の電磁場の影響で前記シリコン塊充填材料(8)を溶解するための前記第一の溶解空間(18)に挿入されるように形成された可動の始動加熱装置(7)を設け、
前記可動の始動加熱装置(7)は伝導性材料で作製されてなり、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内へと伸びる第一の可動ロッド(6)を設け、
前記第一の可動ロッド(6)は、前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内に前記第一の可動底部(5)を垂直方向に移動させるために前記第一の可動底部(5)に連結し、
前記水冷るつぼ(3)の下の前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内に設置された制御冷却区画(9)を設け、
前記制御冷却区画(9)内に設置された第一の加熱装置セット(10)を設け、
前記第一の可動底部(5)は前記第一の加熱装置セット(10)に沿って垂直方向に移動するように形成し、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)に内蔵された第二の可動底部(12)を設け、
前記水冷るつぼ(3)および前記第二の可動底部(12)により形成された第二の溶解空間(21)を設け、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)に伸びる出口部を有し、シリコン塊充填材料(8)を前記第二の溶解空間(21)に降下させるように前記第二の溶解空間(21)に設置されてなる充填容器(2)を設け、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内に設置され、前記インダクタ(4)によって生成された放射熱および前記インダクタ4の電磁場の影響で前記シリコン塊充填材料(8)を溶解するための前記第二の溶解空間(21)に挿入されるように形成された前記可動の始動加熱装置(7)を設け、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内へと伸びる第二の可動ロッド(13)を設け、
前記第二の可動ロッド(13)は、前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内に前記第二の可動底部(12)を垂直方向に移動させるために前記第二の可動底部(12)に連結されてなり、
前記制御冷却区画(9)内に設置された第二の加熱装置セット(11)を設け、
前記第一及び第二の加熱装置セット(10,11)は、前記水冷るつぼ(3)の下の前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内に設置された前記制御冷却区画(9)内のプラットフォーム(14)に搭載されてなり、
前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)内にある前記第一の加熱装置セット(10)及び第二の加熱装置セット(11)の間に設置された回転可能な軸(15)を設け、
前記プラットフォーム(14)は前記軸(15)を中心として180度回転するように形成され、
ガスシール(17)を通じて前記気密且つ一体的に形成された単一の不可欠なチャンバー(1)に連結された排出装置(16)を設け、
(A)制御された雰囲気下で前記水冷るつぼ(3)の前記第一の溶解空間(18)内の第一の可動底部(5)上にシリコン塊充填材料(8)を充填して始動加熱を行う工程と、
(B)溶融シリコンの槽を生成する工程と、
(C)当該溶融シリコンを溶解して第一の溶解空間(18)の形状に鋳造する工程と、
(D)製造される多結晶インゴットの特定の不純物ごとに定められた基準値に前記溶融シリコン中の不純物濃度が到達すると、前記溶融シリコン中の不純物含有量が臨界不純物量に到達したとみなして前記溶解および鋳造する工程を停止する工程と、
(E)多結晶シリコンインゴットを結晶化させる工程と、
(F)前記多結晶シリコンインゴットを制御下で冷却する工程と、
(G)前記多結晶シリコンインゴットを、第一の加熱装置セット(10)に向かって前記制御冷却区画(9)内を徐々に下降せしめ、そこで制御冷却が行われ、熱応力が除去されてなる、工程と、
(H)前記結晶化させる工程が完了した時点で、前記多結晶シリコンインゴットは、前記第一の可動底部(5)および前記第一の加熱装置セット(10)とともに移動され、さらに、制御下で冷却される工程と、
(I)前記シリコンインゴットの移動と同時に、前記第二の加熱装置セット(11)および前記第二の可動底部(12)が当該シリコンインゴットの移動により空いた空間内の前記プラットフォーム(14)上に回転せしめられる工程と、
(J)前記第二の可動底部(12)を前記水冷るつぼ(3)内に移動する工程と、
(K)次のシリコンインゴットを製造するために前記(A)〜(J)工程を繰り返す工程と、
を有することを特徴とする方法。
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Application Number | Priority Date | Filing Date | Title |
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UAA200814479A UA92392C2 (uk) | 2008-12-15 | 2008-12-15 | Спосіб одержання зливків полікристалічного кремнію індукційним методом та пристрій для його здійснення |
UAA200814479 | 2008-12-15 | ||
PCT/UA2009/000067 WO2010071614A1 (en) | 2008-12-15 | 2009-12-14 | Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same |
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JP2012512126A JP2012512126A (ja) | 2012-05-31 |
JP2012512126A5 JP2012512126A5 (ja) | 2013-02-07 |
JP5759382B2 true JP5759382B2 (ja) | 2015-08-05 |
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CN102120579B (zh) * | 2011-01-29 | 2012-10-03 | 大连隆田科技有限公司 | 一种电子束高效、连续熔炼提纯多晶硅的方法及设备 |
CN104805506B (zh) * | 2015-03-24 | 2017-06-16 | 中国科学院工程热物理研究所 | 一种基于液态金属强化换热控制坩埚热应力的方法 |
CN106735078B (zh) * | 2016-11-18 | 2019-07-05 | 中国科学院金属研究所 | 一种非晶合金或其复合材料的连续精密成形设备和工艺 |
CN111230077A (zh) * | 2020-03-09 | 2020-06-05 | 西北工业大学 | 高温合金宽调速定向凝固装置 |
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US4572812A (en) * | 1984-08-13 | 1986-02-25 | The United States Of America As Represented By The Secretary Of Energy | Method and apparatus for casting conductive and semiconductive materials |
EP0349904B1 (en) | 1988-07-05 | 1994-02-23 | Sumitomo Sitix Co., Ltd. | Apparatus for casting silicon |
JPH07138012A (ja) * | 1993-11-16 | 1995-05-30 | Sumitomo Sitix Corp | シリコン鋳造装置 |
DE19607098C2 (de) * | 1996-02-24 | 1999-06-17 | Ald Vacuum Techn Gmbh | Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel |
DE60037944T2 (de) | 2000-12-28 | 2009-01-22 | Sumco Corp. | Kontinuierliches giessverfahren für silizium |
CN2715885Y (zh) * | 2004-07-08 | 2005-08-10 | 上海大学 | 梯度强磁场单向凝固结晶装置 |
CN1275724C (zh) * | 2004-08-11 | 2006-09-20 | 哈尔滨工业大学 | 多功能冷坩埚电磁精确成形与定向凝固装置 |
US7368368B2 (en) * | 2004-08-18 | 2008-05-06 | Cree, Inc. | Multi-chamber MOCVD growth apparatus for high performance/high throughput |
JP2007051026A (ja) * | 2005-08-18 | 2007-03-01 | Sumco Solar Corp | シリコン多結晶の鋳造方法 |
WO2007063751A1 (ja) * | 2005-11-29 | 2007-06-07 | Seiko Instruments Inc. | 表示装置の製造方法、及び貼り合わせ方法 |
CN1873062A (zh) * | 2006-05-06 | 2006-12-06 | 大连理工大学 | 一种太阳能电池用高纯多晶硅的制备方法和装置 |
JP2008156166A (ja) * | 2006-12-25 | 2008-07-10 | Sumco Solar Corp | シリコンインゴットの鋳造方法および切断方法 |
CN101307487B (zh) * | 2007-05-16 | 2010-05-19 | 佳科太阳能硅(厦门)有限公司 | 一种连续生产多晶硅锭的定向凝固方法及其装置 |
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WO2010071614A1 (en) | 2010-06-24 |
CN102438773A (zh) | 2012-05-02 |
US9410266B2 (en) | 2016-08-09 |
EP2376244B1 (en) | 2017-02-22 |
KR20110117083A (ko) | 2011-10-26 |
EP2376244A1 (en) | 2011-10-19 |
US20150107304A1 (en) | 2015-04-23 |
KR101335147B1 (ko) | 2013-12-05 |
CN102438773B (zh) | 2015-04-01 |
US20110247364A1 (en) | 2011-10-13 |
JP2012512126A (ja) | 2012-05-31 |
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