JP5166817B2 - 単結晶試料の結晶方位測定方法 - Google Patents
単結晶試料の結晶方位測定方法 Download PDFInfo
- Publication number
- JP5166817B2 JP5166817B2 JP2007270275A JP2007270275A JP5166817B2 JP 5166817 B2 JP5166817 B2 JP 5166817B2 JP 2007270275 A JP2007270275 A JP 2007270275A JP 2007270275 A JP2007270275 A JP 2007270275A JP 5166817 B2 JP5166817 B2 JP 5166817B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- single crystal
- crystal
- crystal orientation
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Description
2 試料
3 電子銃
4 電子線
5 検出装置
6 後方散乱電子
Claims (3)
- 六方晶系単結晶試料の結晶方位を後方散乱電子回折法によって測定する方法であって、
試料座標系におけるTD軸を前記六方晶系単結晶試料の[0001]方向と平行に配置して後方散乱電子回折パターンを取得するステップと、
前記取得した後方散乱電子回折パターンをコンピュータ解析して面指数付けを行うステップと、
前記指数付けされた面指数分布に基づいて前記試料の結晶方位を決定するステップと、を含む、単結晶試料の結晶方位測定方法。 - 請求項1に記載の方法において、前記六方晶系単結晶試料は6Hあるいは4H−SiC単結晶であることを特徴とする、単結晶試料の結晶方位測定方法。
- 請求項1に記載の方法において、前記六方晶系単結晶試料は、入射電子線に垂直な平面に対してほぼ70度傾斜して配置されていることを特徴とする、単結晶試料の結晶方位測定方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007270275A JP5166817B2 (ja) | 2007-10-17 | 2007-10-17 | 単結晶試料の結晶方位測定方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007270275A JP5166817B2 (ja) | 2007-10-17 | 2007-10-17 | 単結晶試料の結晶方位測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009098008A JP2009098008A (ja) | 2009-05-07 |
JP5166817B2 true JP5166817B2 (ja) | 2013-03-21 |
Family
ID=40701152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007270275A Expired - Fee Related JP5166817B2 (ja) | 2007-10-17 | 2007-10-17 | 単結晶試料の結晶方位測定方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5166817B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011122947A (ja) * | 2009-12-10 | 2011-06-23 | Denki Kagaku Kogyo Kk | 結晶方位分布の偏りの解析方法 |
JP6085150B2 (ja) * | 2012-03-16 | 2017-02-22 | 株式会社日立ハイテクサイエンス | 試料作製装置及び試料作製方法 |
JP5851318B2 (ja) * | 2012-04-10 | 2016-02-03 | 日本電子株式会社 | 試料保持装置および試料解析装置 |
JP5958914B2 (ja) * | 2013-03-13 | 2016-08-02 | 株式会社Tslソリューションズ | 透過型ebsd法 |
CN103529066B (zh) * | 2013-11-05 | 2016-01-13 | 华北电力大学 | 一种在立方晶体背射劳埃照片上标定(111)晶面的方法 |
CN106233420B (zh) * | 2014-05-09 | 2018-10-16 | 株式会社日立高新技术 | 试样加工方法及带电粒子束装置 |
JP6781893B2 (ja) * | 2016-03-15 | 2020-11-11 | 住友金属鉱山株式会社 | 結晶方位の解析方法 |
CN113390908B (zh) * | 2020-03-12 | 2023-03-10 | 中国科学院上海硅酸盐研究所 | 一种基于电子背散射衍射花样的晶面间距测量方法 |
CN113203763B (zh) * | 2021-06-04 | 2023-07-04 | 哈尔滨工业大学 | 一种利用极图分析的滑移线快速精确标定方法 |
CN113376192B (zh) * | 2021-06-11 | 2023-11-10 | 华东交通大学 | 一种基于ebsd花样推测模糊菊池带宽度的方法 |
CN114184629B (zh) * | 2021-10-09 | 2024-04-09 | 中国航发北京航空材料研究院 | 一种基于取向分布函数的单晶材料极图极点标定方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000046762A (ja) * | 1998-07-27 | 2000-02-18 | Mitsubishi Electric Corp | 試料の評価方法及び評価装置 |
JP2002022627A (ja) * | 2000-07-12 | 2002-01-23 | Matsushita Electric Ind Co Ltd | 電子線回折用試料および電子顕微鏡試料の製造方法 |
JP4088183B2 (ja) * | 2003-01-31 | 2008-05-21 | 株式会社神戸製鋼所 | 成形性に優れたチタン板及びその製造方法 |
JP4616612B2 (ja) * | 2004-10-14 | 2011-01-19 | 日本電子株式会社 | 反射電子線検出装置 |
JP4938981B2 (ja) * | 2005-01-13 | 2012-05-23 | キヤノン株式会社 | 結晶方位測定方法 |
-
2007
- 2007-10-17 JP JP2007270275A patent/JP5166817B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2009098008A (ja) | 2009-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5166817B2 (ja) | 単結晶試料の結晶方位測定方法 | |
JP5839626B2 (ja) | 電子線回折による高スループット結晶構造解析のための方法及びデバイス | |
Schwarzer et al. | Present state of electron backscatter diffraction and prospective developments | |
JP6777951B2 (ja) | SiC基板の評価方法 | |
King et al. | First laboratory X-ray diffraction contrast tomography for grain mapping of polycrystals | |
JP4022512B2 (ja) | 結晶解析方法及び結晶解析装置 | |
US20200279716A1 (en) | Reference sample with inclined support base, method for evaluating scanning electron microscope, and method for evaluating sic substrate | |
US10811217B2 (en) | Crystal orientation figure creating device, charged particle beam device, crystal orientation figure creating method, and program | |
US9171696B2 (en) | Orientation imaging using wide angle convergent beam diffraction in transmission electron microscopy | |
JP2012013703A (ja) | 電子回折断層撮影の方法 | |
Chen et al. | Optimization of EBSD parameters for ultra‐fast characterization | |
JP6314890B2 (ja) | 結晶方位の解析方法および解析装置 | |
US9396907B2 (en) | Method of calibrating a scanning transmission charged-particle microscope | |
Kaboli et al. | Rotation contour contrast reconstruction using electron backscatter diffraction in a scanning electron microscope | |
Sparks et al. | High-precision orientation mapping from spherical harmonic transform indexing of electron backscatter diffraction patterns | |
Nave et al. | Imperfection and radiation damage in protein crystals studied with coherent radiation | |
Hayashida et al. | Accurate measurement of relative tilt and azimuth angles in electron tomography: A comparison of fiducial marker method with electron diffraction | |
Day | Spherical Kikuchi maps and other rarities | |
JP2014022174A (ja) | 試料台およびそれを備えた電子顕微鏡 | |
Kim et al. | Alignment Methods and Analysis of Tilt Angle Range for the Data Scanned in Electron Tomography | |
JP2021043073A (ja) | 誤差算出装置、荷電粒子線装置、誤差算出方法およびプログラム | |
Michael | Characterization of nano-crystalline materials using electron backscatter diffraction in the scanning electron microscope | |
Kamimura et al. | Low-energy Electron Diffractive Imaging for Three-dimensional Light-element Materials | |
Mackie et al. | Effective work function measurements of advanced cathode materials via a thermionic projection microscope system | |
Tao et al. | Another way to implement diffraction contrast in SEM |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100831 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120424 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120517 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120625 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121204 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121221 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151228 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151228 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |